datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Part Name(s) : CM2N60
ETC1
Unspecified
Description : POWER MOSFET / 600V N-Channel VDMOS

1. 600V N-Channel VDMOS
2. When you need to use anti-static and storage
3. meet RoHS and other environmental directives

Main purpose
1. Mainly used for charger, LED driver, PC-assisted
2. Power and other power switching circuit

 Main Features
1. Switching speed
2. On-state resistance, input capacitance small

Package Outline Package Outline
1. TO-220

Reference datasheet : N-Channel-Power-MOSFET" target="_blank">NDF03N60Z, NDD03N60Z

Part Name(s) : G40N60C3 HGTG40N60C3
Intersil
Intersil
Description : 75A, 600V, UFS Series N-Channel IGBT

75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.

Features
• 75A, 600V, TC= 25oC
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss

Part Name(s) : G40N60C3 HGTG40N60C3
Fairchild
Fairchild Semiconductor
Description : 75A, 600V, UFS Series N-Channel IGBT

75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.

Features
• 75A, 600V, TC= 25oC
600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . .  100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss

Part Name(s) : IRFBC40
Intersil
Intersil
Description : 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
   
Features
• 6.2A, 600V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount
        Components to PC Boards”
   

Part Name(s) : TSF5N60M TSP5N60M
ETC1
Unspecified
Description : 600V N-Channel MOSFET

General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS

Features
■ 4.5A,600V,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability

Part Name(s) : WFD2N60 WFU2N60
WISDOM
Wisdom technologies
Description : HIGH VOLTAGE N-Channel MOSFET

600V N-Channel MOSFET

Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 8.5 nC (Typ.)
□ BVDSS=600V,ID=2A
□ Lower RDS(on) : 5Ω (Max) @VG=10V
□ 100% Avalanche Tested

 

Part Name(s) : FQAF7N60
Fairchild
Fairchild Semiconductor
Description : 600V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 5.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQA12N60
Fairchild
Fairchild Semiconductor
Description : 600V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 12A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQA7N60
Fairchild
Fairchild Semiconductor
Description : 600V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 7.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQPF6N60
KERSEMI
Kersemi Electronic Co., Ltd.
Description : 600V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 3.6A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]