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Part Name(s) : G40N60C3 HGTG40N60C3 Intersil
Intersil
Description : 75A, 600V, UFS Series N-CHANNEL IGBT View

75A, 600V, UFS Series N-CHANNEL IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.

Features
• 75A, 600V, TC= 25oC
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss

Part Name(s) : G40N60C3 HGTG40N60C3 Fairchild
Fairchild Semiconductor
Description : 75A, 600V, UFS Series N-CHANNEL IGBT View

75A, 600V, UFS Series N-CHANNEL IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.

Features
• 75A, 600V, TC= 25oC
600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . .  100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss

Part Name(s) : CM2N60 ETC1
Unspecified
Description : POWER MOSFET / 600V N-CHANNEL VDMOS View

1. 600V N-CHANNEL VDMOS
2. When you need to use anti-static and storage
3. meet RoHS and other environmental directives

Main purpose
1. Mainly used for charger, LED driver, PC-assisted
2. Power and other power switching circuit

 Main Features
1. Switching speed
2. On-state resistance, input capacitance small

Package Outline Package Outline
1. TO-220

Reference datasheet : N-CHANNEL-Power-MOSFET" target="_blank">NDF03N60Z, NDD03N60Z

Part Name(s) : TSF5N60M TSP5N60M ETC1
Unspecified
Description : 600V N-CHANNEL MOSFET View

General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS

Features
■ 4.5A,600V,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability


Part Name(s) : IRFB1010 IRFBC40LC IRFBC40LCPBF IRFBG30PBF IR
International Rectifier
Description : HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A) View

HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)

Part Name(s) : G40N60B3 HGTG40N60B3 Fairchild
Fairchild Semiconductor
Description : 70A, 600V, UFS Series N-CHANNEL IGBT View

70A, 600V, UFS Series N-CHANNEL IGBT

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49052.

Features
• 70A, 600V, TC= 25oC
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . .  100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss

Part Name(s) : HGT4E30N60B3DS HGTG30N60B3D G30N60B3D G30N60B3D HGTG30N60B3D HGTG30N60B3D.. Fairchild
Fairchild Semiconductor
Description : 60A, 600V, UFS Series N-CHANNEL IGBT with Anti-Parallel Hyperfast Diode View

60A, 600V, UFS Series N-CHANNEL IGBT
with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features
• 60A, 600V, TC= 25°C
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Part Name(s) : WFD2N60 WFU2N60 WISDOM
Wisdom technologies
Description : HIGH VOLTAGE N-CHANNEL MOSFET View

600V N-CHANNEL MOSFET

Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 8.5 nC (Typ.)
□ BVDSS=600V,ID=2A
□ Lower RDS(on) : 5Ω (Max) @VG=10V
□ 100% Avalanche Tested

 

Part Name(s) : FQP2N60 Fairchild
Fairchild Semiconductor
Description : 600V N-CHANNEL MOSFET View

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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