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Part Name(s) : EN29LV800 EN29LV800T70RT EN29LV800T70RTP EN29LV800T70RTI EN29LV800T70RTIP EN29LV800T70RS EN29LV800T70RSP EN29LV800T70RSI EN29LV800T70RSIP EN29LV800T90T EN29LV800T90TP EN29LV800T90TI EN29LV800T90TIP EN29LV800T90S EN29LV800T90SP EN29LV800T90SI EN29LV800T90SIP EN29LV800B70RT EN29LV800B70RTP EN29LV800B70RTI EN29LV800B70RTIP EN29LV800B70RS EN29LV800B70RSP EN29LV800B70RSI EN29LV800B70RSIP Eon
Eon Silicon Solution Inc.
Description : 8 MegaBIT (1024K x 8-BIT / 512K x 16-BIT) FLASH MEMORY BOOT SECTOR FLASH MEMORY, CMOS 3.0 VOLT-ONLY View

GENERAL DESCRIPTION
The EN29LV800 is an 8-MegaBIT, electrically erasable, read/write non-volatile FLASH MEMORY, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• Single power supply operation
    - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
    - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
• Manufactured on 0.28 µm process technology
• High performance
    - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
    - 7 mA typical active read current
    - 15 mA typical program/erase current
    - 1 µA typical standby current (standard access time to active mode)
• Flexible SECTOR Architecture:
    - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte SECTORs (byte mode)
    - One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword SECTORs (word mode)
    - Supports full chip erase
    - Individual SECTOR erase supported
    - SECTOR protection: Hardware locking of SECTORs to prevent program or erase operations within individual SECTORs Additionally, temporary SECTOR Group Unprotect allows code changes in previously locked SECTORs.
• High performance program/erase speed
    - Byte/Word program time: 8µs typical
    - SECTOR erase time: 500ms typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle BITs feature
• Single SECTOR and Chip Erase
SECTOR Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read or program another SECTOR during Erase Suspend Mode
• 0.28 µm double-metal double-poly triple-well CMOS FLASH Technology
• Low Vcc write inhiBIT < 2.5V
• >100K program/erase endurance cycle
• 48-pin TSOP (Type 1)
• Commercial Temperature Range

Part Name(s) : AM29LV004B-1 AMD
Advanced Micro Devices
Description : 4 MegaBIT (512 K x 8-BIT) CMOS 3.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY View

GENERAL DESCRIPTION
The Am29LV004B is an 4 MBIT, 3.0 VOLT-ONLY FLASH MEMORY organized as 524,288 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
    — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ Manufactured on 0.35 µm process technology
    — Compatible with 0.5 µm Am29LV004 device
■ High performance
    — Full voltage range: access times as fast as 80 ns
    — Regulated voltage range: access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
    — 200 nA Automatic Sleep mode current
    — 200 nA standby mode current
    — 7 mA read current
    — 15 mA program/erase current
■ Flexible SECTOR architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte SECTORs
    — Supports full chip erase
    — SECTOR Protection features:
        A hardware method of locking a SECTOR to prevent any program or erase operations within that SECTOR
        SECTORs can be locked in-system or via programming equipment
        Temporary SECTOR Unprotect feature allows code changes in previously locked SECTORs
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom BOOT block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated SECTORs
    — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per SECTOR
■ Package option
    — 40-pin TSOP
■ Compatibility with JEDEC standards
    — Pinout and software compatible with singlepower supply FLASH
    — Superior inadvertent write protection
■ Data# Polling and toggle BITs
    — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from, or program data to, a SECTOR that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading array data

Part Name(s) : AT29LV040A-20TC AT29LV040A-20TI AT29LV040A-25TC AT29LV040A-25TI Atmel
Atmel Corporation
Description : 4 MegaBIT (512K x 8) 3-volt Only 256 Byte SECTOR CMOS FLASH MEMORY View

Description
The AT29LV040A is a 3-VOLT-ONLY in-system FLASH Programmable and Erasable Read Only MEMORY (PEROM). Its 4 megaBITs of MEMORY is organized as 524,288 words by 8 BITs. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 200 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 µA. The device endurance is such that any SECTOR can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 3-VOLT-ONLY FLASH memories.
To allow for simple in-system reprogrammability, the AT29LV040A does not require high input voltages for programming. Three-VOLT-ONLY commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV040A is performed on a SECTOR basis; 256-bytes of data are loaded into the device and then simultaneously programmed.

Features
• Single Voltage, Range 3V to 3.6V Supply
• 3-VOLT-ONLY Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 200 ns
• Low Power Dissipation
   15 mA Active Current
   20 µA CMOS Standby Current
SECTOR Program Operation
   Single Cycle Reprogram (Erase and Program)
   2048 SECTORs (256 bytes/SECTOR)
   Internal Address and Data Latches for 256-Bytes
• Two 16 KB BOOT Blocks with Lockout
• Fast SECTOR Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

Part Name(s) : A29800B A29800BTG-55F A29800BTG-55UF A29800BTV-55F A29800BTV-55UF A29800BUV-55F A29800BUV-55UF A29800BUG-55F A29800BUG-55UF AMIC
AMIC Technology
Description : 1M X 8 BIT / 512K X 16 BIT CMOS 5.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY View

General Description
The A29800B is an 8MBIT, 5.0 VOLT-ONLY FLASH MEMORY organized as 1,048,576 bytes of 8 BITs or 524,288 words of 16 BITs each. The 8 BITs of data appear on I/O0 - I/O7; the 16 BITs of data appear on I/O0~I/O15. The is offered in 48-ball FBGA and 48-Pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29800B can also be programmed in standard EPROM programmers.
The A29800B has the first toggle BIT, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6 toggle BIT, the A29800B has a second toggle BIT, I/O2, to indicate whether the addressed SECTOR is being selected for erase. The A29800B also offers the ability to program in the Erase Suspend mode. The standard A29800B offers access time of 55ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable ( CE ), write enable ( WE ) and output enable (OE ) controls.

Features
■ Single power supply operation
- Full voltage range: 4.5 to 5.5 volt for read and write operations
■ Access time:
   - 55ns (max.)
■ Current:
   - 20 mA typical active read current
   - 30 mA typical program/erase current
   - 6μA typical CMOS standby
■ Flexible SECTOR architecture
   - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 SECTORs
   - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 SECTORs
   - Any combination of SECTORs can be erased
   - Supports full chip erase
   - SECTOR protection:
      A hardware method of protecting SECTORs to prevent any
      inadvertent program or erase operations within that
      SECTOR. Temporary SECTOR Unprotect feature allows code
      changes in previously locked SECTORs
■ Industrial operating temperature range: -40ºC to +85ºC for -U series
■ Unlock Bypass Program Command
   - Reduces overall programming time when issuing
      multiple program command sequence
■ Top or bottom BOOT block configurations available
■ Embedded Algorithms
   - Embedded Erase algorithm will automatically erase the
      entire chip or any combination of designated SECTORs and
      verify the erased SECTORs
   - Embedded Program algorithm automatically writes and
      verifies data at specified addresses
■ Minimum 100,000 program/erase cycles per SECTOR
■ 20-year data retention at 125ºC
   - Reliable operation for the life of the system
■ Compatible with JEDEC-standards
   - Pinout and software compatible with single-power-supply
      FLASH MEMORY standard
   - Superior inadvertent write protection
■ Data Polling and toggle BITs
   - Provides a software method of detecting completion of
      program or erase operations
■ Ready / BUSY pin (RY / BY )
   - Provides a hardware method of detecting completion of
      program or erase operations
■ Erase Suspend/Erase Resume
   - Suspends a SECTOR erase operation to read data from, or
      program data to, a non-erasing SECTOR, then resumes the
      erase operation
■ Hardware reset pin (RESET )
- Hardware method to reset the device to reading array data
■ Package options
   - 48-pin TSOP (I) or 48-ball TFBGA
   - All Pb-free (Lead-free) products are RoHS2.0 compliant


Part Name(s) : AT29C040 AT29C040A-10 AT29C040A-10PC AT29C040A-10PI AT29C040A-10TC AT29C040A-10TI AT29C040A-12 AT29C040A-12PC AT29C040A-12PI AT29C040A-15 AT29C040A-15PC AT29C040A-15PI Atmel
Atmel Corporation
Description : 4-MegaBIT 512K x 8 5-volt Only 256-Byte SECTOR CMOS FLASH MEMORY View

Description
The AT29C040A is a 5-VOLT-ONLY in-system FLASH Programmable and Erasable Read Only MEMORY (PEROM). Its 4 megaBITs of MEMORY is organized as 524,288 words by 8 BITs. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 100 ns, and a low 220 mW power dissipation. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any SECTOR can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 5-VOLT-ONLY FLASH family.

Features
• Fast Read Access Time - 100 ns
• 5-VOLT-ONLY Reprogramming
SECTOR Program Operation Single Cycle Reprogram (Erase and Program) 2048 SECTORs (256 bytes/SECTOR)
Internal Address and Data Latches for 256-Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Two 16 KB BOOT Blocks with Lockout
• Fast SECTOR Program Cycle Time - 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
  40 mA Active Current
  100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs

Part Name(s) : AM29LV200 AM29LV200B AMD
Advanced Micro Devices
Description : 2 MegaBIT (256 K x 8-BIT/128 K x 16-BIT) CMOS 3.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY View

The Am29LV200 is a 2 MBIT, 3.0 VOLT-ONLY FLASH MEMORY organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.

This device is designed to be programmed in system using only a single 3.0 volt VCCsupply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

Part Name(s) : AM29F160D AM29F160DB AM29F160DB120 AM29F160DB75 AM29F160DB90 AM29F160DT AM29F160DT120 AM29F160DT75 AM29F160DT90 AM29F160DT75EC AM29F160DT75EI AM29F160DT75FC AM29F160DT75FI AM29F160DT90EC AM29F160DT90EI AM29F160DT90FC AM29F160DT90FI AM29F160DT120EC AM29F160DT120EI AM29F160DT120FC AM29F160DT120FI AM29F160DB75EC AM29F160DB75EI AM29F160DB75FC AM29F160DB75FI AMD
Advanced Micro Devices
Description : 16 MegaBIT (2 M x 8-BIT/1 M x 16-BIT) CMOS 5.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY View

GENERAL DESCRIPTION
The Am29F160D is a 16 MBIT, 5.0 VOLT-ONLY FLASH MEMORY device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 Volt single power supply operation
   — Minimizes system-level power requirements
■ High performance
   — Access times as fast as 70 ns
■ Manufactured on 0.25 µm process technology
■ CFI (Common FLASH Interface) compliant
   — Provides device-specific information to the
      system, allowing host software to easily
      reconfigure for different FLASH devices
■ Ultra low power consumption (typical values at 5 MHz)
   — 15 mA typical active read current
   — 35 mA typical erase/program current
   — 300 nA typical standby mode current
■ Flexible SECTOR architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      thirty-one 64 Kbyte SECTORs (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      thirty-one 32 Kword SECTORs (word mode)
   — Supports full chip erase
   — SECTOR Protection features:
   — Hardware method of locking a SECTOR to prevent
      program or erase operations within that SECTOR
   — SECTORs can be locked in-system or via
      programming equipment
   — Temporary SECTOR Unprotect feature allows code
      changes in previously locked SECTORs
■ Top BOOT or bottom BOOT configurations available
■ Minimum 1,000,000 write cycle guarantee per SECTOR
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 48-pin TSOP (Continue ...)

Part Name(s) : AT29C040A AT29C040A-12JU AT29C040A-12TU AT29C040A-90JU AT29C040A-90TU Atmel
Atmel Corporation
Description : 4-megaBIT (512K x 8) 5-volt Only 256-byte SECTOR FLASH MEMORY View

Description
The AT29C040A is a 5-volt only in-system FLASH Programmable and Erasable Read Only MEMORY (PEROM). Its 4 megaBITs of MEMORY is organized as 524,288 words by 8 BITs. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a low 220 mW power dissipation. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any SECTOR can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 5-volt only FLASH family.

Features
• Fast Read Access Time – 90 ns
• 5-volt Only Reprogramming
SECTOR Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 SECTORs (256 Bytes/SECTOR)
– Internal Address and Data Latches for 256 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Two 16K Bytes BOOT Blocks with Lockout
• Fast SECTOR Program Cycle Time – 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 40 mA Active Current
– 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ±10% Supply
• Green (Pb/Halide-free) Packaging Option

Part Name(s) : AM29F160D AM29F160DB70 AM29F160DB70EC AM29F160DB70ED AM29F160DB70EF AM29F160DB70EI AM29F160DB75 AM29F160DB75EC AM29F160DB75ED AM29F160DB75EF AM29F160DB75EI AM29F160DB90 AM29F160DB90EC AM29F160DB90ED AM29F160DB90EF AM29F160DB90EI AM29F160DT70 AM29F160DT70EC AM29F160DT70ED AM29F160DT70EF AM29F160DT70EI AM29F160DT75 AM29F160DT75EC AM29F160DT75ED AM29F160DT75EF Spansion
Spansion Inc.
Description : 16 MegaBIT (2 M x 8-BIT/1 M x 16-BIT) CMOS 5.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY View

GENERAL DESCRIPTION
The Am29F160D is a 16 MBIT, 5.0 VOLT-ONLY FLASH MEMORY device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 Volt single power supply operation
   — Minimizes system-level power requirements
■ High performance
   — Access times as fast as 70 ns
■ Manufactured on 0.23 µm process technology
■ CFI (Common FLASH Interface) compliant
   — Provides device-specific information to the system, allowing host software to easily reconfigure for different FLASH devices
■ Ultra low power consumption (typical values at 5 MHz)
   — 15 mA typical active read current
   — 35 mA typical erase/program current
   — 300 nA typical standby mode current
■ Flexible SECTOR architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte SECTORs (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword SECTORs (word mode)
   — Supports full chip erase
   — SECTOR Protection features:
   — Hardware method of locking a SECTOR to prevent program or erase operations within that SECTOR
   — SECTORs can be locked in-system or via programming equipment
   — Temporary SECTOR Unprotect feature allows code changes in previously locked SECTORs
■ Top BOOT or bottom BOOT configurations available
■ Minimum 1,000,000 write cycle guarantee per SECTOR
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 48-pin TSOP
■ Compatible with JEDEC standards
   — Pinout and software compatible with single power supply FLASH
   — Superior inadvertent write protection
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated SECTORs
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a SECTOR that is not being erased, then resumes the erase operation
■ Data# Polling and toggle BITs
   — Provides a software method of detecting program or erase operation completion
■ Unlock Bypass Program command
   — Reduces overall programming time when issuing multiple program command sequences
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device for reading array data
■ WP# input pin
   — At VIL, protects the 16 Kbyte BOOT SECTOR from erasure regardless of SECTOR protect/unprotect status
   — At VIH, allows removal of BOOT SECTOR protection
■ Program and Erase Performance
   — SECTOR erase time: 1 s typical for each 64 Kbyte SECTOR
   — Byte program time: 7 µs typical

 

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