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Part Name(s) : N04Q1612C2BB2-15C N04Q1612C2BB2-70C N04Q1612C2BB2-85C N04Q1612C2BT2-15C N04Q1612C2BT2-70C N04Q1612C2BT2-85C N04Q1612C2BW-15C N04Q1612C2BW-70C N04Q1612C2BW-85C N04Q1612C2BX-15C N04Q1618C2B N04Q1618C2BB2-15C N04Q1618C2BB2-70C N04Q1618C2BB2-85C N04Q1618C2BT2-15C N04Q1618C2BT2-70C N04Q1618C2BT2-85C N04Q1618C2BW-15C N04Q1618C2BW-70C N04Q1618C2BW-85C N04Q1618C2BX-15C N04Q1618C2BX-70C N04Q1618C2BX-85C N04Q16XXC2BX AMI
AMI Semiconductor
Description : 4MB ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM W/ DUAL VCC AND VCCQ for Ultimate POWER Reduction

Overview
The N04Q16yyC2B are ULTRA-LOW POWER memory devices containing a 4 Mbit Static RANDom Access Memory organized as 262,144 words by 16 bits. The device is designed AND fabricated using AMI Semiconductor’s advanced CMOS technology to provide ULTRA-LOW active AND stANDby POWER.

Features
• Multiple POWER Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
DUAL VCC / VCCQ POWER Supplies
    1.2V VCC with 3V VCCQ
    1.8V VCC with 3V VCCQ
• Very low stANDby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    DUAL Chip Enables (CE1 AND CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic POWER down to stANDby mode
• BGA, TSOP AND KGD options
• RoHS Compliant

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Part Name(s) : N04Q1612C2BX-15C N04Q1618C2BX-15C N04Q1618C2BX-70C N04Q1625C2BX-15C N04Q1630C2BX-70C N04Q16YYC2B N04Q1612C2BT-70C N04Q1612C2BT-70I N04Q1612C2BT-15C N04Q1612C2BT-15I N04Q1612C2BT2-70C N04Q1612C2BT2-70I N04Q1612C2BT2-15C N04Q1612C2BT2-15I N04Q1612C2BB-70C N04Q1612C2BB-70I N04Q1612C2BB-15C N04Q1612C2BB-15I N04Q1612C2BB2-70C N04Q1612C2BB2-70I N04Q1612C2BB2-15C N04Q1612C2BB2-15I N04Q1612C2BW-70C N04Q1612C2BW-70I N04Q1612C2BW-15C ETC
Unspecified
Description : 4MB ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM W/ DUAL VCC AND VCCQ for Ultimate POWER Reduction

[NanoAmp Solutions, Inc.]

The N04Q16yyC2B are ULTRA-LOW POWER memory devices containing a 4 Mbit Static RANDom Access Memory organized as 262,144 words by 16 bits. The device is designed AND fabricated using NanoAmp’s advanced CMOS technology to provide ULTRA-LOW active AND stANDby POWER.
Features
• Multiple POWER Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
    2.3V - 2.7V
    2.7V - 3.6V
DUAL VCC / VCCQ POWER Supplies
    1.2V VCC with 3V VCCQ
    1.8V VCC with 3V VCCQ
    2.5V VCC with 3V VCCQ
• Very low stANDby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    DUAL Chip Enables (CE1 AND CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic POWER down to stANDby mode
• BGA, TSOP AND KGD options
• RoHS Compliant

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Part Name(s) : N04L163WC2A ETC
Unspecified
Description : 4MB ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM

The N04L163WC2A is an integrated memory
device containing a 4 Mbit Static RANDom Access
Memory organized as 262,144 words by 16 bits.
The device is designed AND fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance AND ULTRA-LOW
POWER
Features
• Single Wide POWER Supply Range
2.3 to 3.6 Volts
• Very low stANDby current
4.0μA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V AND 1μs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V AND 1μs (Typical)

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Part Name(s) : N04L163WC2AB N04L163WC2AB2 N04L163WC2AT N04L163WC2AT2 N04L163WC2A NANOAMP
NanoAmp Solutions, Inc.
Description : 4MB ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM 256Kx16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static RANDom Access Memory organized as 262,144 words by 16 bits. The device is designed AND fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance AND ULTRA-LOW POWER

Features
• Single Wide POWER Supply Range 2.3 to 3.6 Volts
• Very low stANDby current 4.0μA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V AND 1μs (Typical)
• Very low Page Mode operating current 0.8mA at 3.0V AND 1μs (Typical)

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Part Name(s) : N04L163WC1C N04L163WC1CT1 N04L163WC1CZ1 ETC
Unspecified
Description : 4MB ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM
Features
• Single Wide POWER Supply Range
2.2 to 3.6 Volts
• Very low stANDby current
2.0μA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V AND 1μs (Typical)
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Part Name(s) : N08L1618C2AB N08L1618C2AB2 N08L1618C2AB270I N08L1618C2AB70I NANOAMP
NanoAmp Solutions, Inc.
Description : 8Mb ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM 512K × 16bit

Overview
The N08L1618C2A is an integrated memory device containing a 8 Mbit Static RANDom Access Memory organized as 524,288 words by 16 bits. The device is designed AND fabricated using NanoAmp’s advanced CMOS technology to
provide both high-speed performance AND ULTRA-LOW POWER.

Features
• Single Wide POWER Supply Range
  1.65 to 2.2 Volts
• Very low stANDby current
  0.5µA at 1.8V (Typical)
• Very low operating current
  1.0mA at 1.8V AND 1µs (Typical)
• Very low Page Mode operating current
  0.5mA at 1.8V AND 1µs (Typical)
• Simple memory control
  DUAL Chip Enables (CE1AND CE2)
  Byte control for independent byte operation
  Output Enable (OE) for memory expansion
• Low voltage data retention
   VCC = 1.2V
• Very fast output enable access time
  25ns OEaccess time
• Very fast Page Mode access time
  tAAP = 25ns
• Automatic POWER down to stANDby mode
• TTL compatible three-state output driver

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Part Name(s) : N04L163WC1A N04L163WC1AB N04L163WC1AB1 N04L163WC1AT N04L163WC1AT2 N04L163WC1AT-70I N04L163WC1AB-70I N04L163WC1AT2-70I N04L163WC1AB1-70I NANOAMP
NanoAmp Solutions, Inc.
Description : 4MB ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM

Overview
The N04L163WC1A is an integrated memory device containing a 4 Mbit Static RANDom Access Memory organized as 262,144 words by 16 bits. The device is designed AND fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance AND ULTRA-LOW POWER.
   
Features
• Single Wide POWER Supply Range
    2.3 to 3.6 Volts
• Very low stANDby current
    4.0µA at 3.0V (Typical)
• Very low operating current
    2.0mA at 3.0V AND 1µs (Typical)
• Very low Page Mode operating current
    0.8mA at 3.0V AND 1µs (Typical)
• Simple memory control
    Single Chip Enable (CE)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    VCC = 1.8V
• Very fast output enable access time
    25ns OE access time
• Automatic POWER down to stANDby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available
   

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Part Name(s) : N08L63W2A N08L63W2AB N08L63W2AB2 ON-Semiconductor
ON Semiconductor
Description : 8Mb ULTRA-LOW POWER ASYNCHRONOUS CMOS SRAM 512K X 16bit

The N08L63W2A is an integrated memory device containing a 8 Mbit Static RANDom Access Memory
organized as 524,288 words by 16 bits. The device is designed AND fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance AND ULTRA-LOW
POWER.

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Part Name(s) : N02M083WL1A ETC
Unspecified
Description : 2Mb ULTRA-LOW POWER ASYNCHRONOUS Medical CMOS SRAM
Features
• Single Wide POWER Supply Range
2.3 to 3.6 Volts
• Low stANDby current
3μA maximum at 3.6V
• Very low operating current
2 mA at 3.6V AND 1Mhz (Typical)
• Very low Page Mode operating current
0.5mA at 3.6V AND 1Mhz (Typical)
• Simple memory control
DUAL Chip Enables (CE1 AND CE2)
Output Enable (OE) for memory expansion
View
Part Name(s) : BS616UV1010CI BSI
Brilliance Semiconductor
Description : Ultra Low POWER/Voltage CMOS SRAM 64K X 16 bit

DESCRIPTION
The BS616UV1010 is a high performance, ultra low POWER CMOS Static RANDom Access Memory organized as 65,536 words by 16 bits AND operates from a wide range of 1.8V to 3.6V supply voltage.

FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low POWER consumption :
    VCC = 2.0V C-grade : 10mA (Max.) operating current
                       I- grade : 15mA (Max.) operating current
                       0.01uA (Typ.) CMOS stANDby current
    VCC = 3.0V C-grade : 15mA (Max.) operating current
                       I- grade : 20mA (Max.) operating current
                       0.02uA (Typ.) CMOS stANDby current
• High speed access time :
    -15 150ns (Max.) at VCC = 3.0V
• Input levels are CMOS-compatible
• Automatic POWER down when chip is deselected
• Three state outputs AND TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE AND OE options
• I/O Configuration x8/x16 selectable by LB AND UB pin

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