datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : HM62W16255HCJP-10 HM62W16255HCLJP-10 HM62W16255HCLTT-10 HM62W16255HCTT-10 HM62W16255HC Hitachi
Hitachi -> Renesas Electronics
Description : 4M High Speed SRAM (256-KWORD 16-BIT) View

Description
The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-KWORD × 16-BIT. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W16255HC is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 10 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 145 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max) : 1 mA (max) (L-version)
• Data retention current: 0.6 mA (max) (L-version)
• Data retention voltage: 2.0 V (min) (L-version)
• Center VCC and VSS type pinout

Part Name(s) : HM62W16255HI HM62W16255HJPI-15 HM62W16255HTTI-15 HM62W16255HJPI HM62W16255HTTI Hitachi
Hitachi -> Renesas Electronics
Description : 4M High Speed SRAM (256-KWORD 16-BIT) View

Description
The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-KWORD × 16-BIT. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII.

Features
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 15 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 160 mA (max)
• TTL standby current: 50 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range: –40 to 85°C

Part Name(s) : HM62W16258BLTTI-7 HM62W16258BI Renesas
Renesas Electronics
Description : 4 M SRAM (256-KWORD 16-BIT) View

Description
The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-BIT. HM62W16258BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 70 ns (max)
• Power dissipation:
    - Active: 9.9 mW (typ)
    - Standby: 3.3 µW (typ)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.
• Temperature range: –40 to 85°C

Part Name(s) : HM62W16258BLTTI-7 HM62W16258BI Hitachi
Hitachi -> Renesas Electronics
Description : 4 M SRAM (256-KWORD 16-BIT) View

Description
The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-BIT. HM62W16258BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 70 ns (max)
• Power dissipation:
    - Active: 9.9 mW (typ)
    - Standby: 3.3 µW (typ)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.
• Temperature range: –40 to 85°C


Part Name(s) : HM6216255HC HM6216255HCJP-10 HM6216255HCLJP-10 HM6216255HCTT-10 HM6216255HCLTT-10 Hitachi
Hitachi -> Renesas Electronics
Description : 4M High Speed SRAM (256-KWORD 16-BIT) View

Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-BIT. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 170 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout

Part Name(s) : HM62V16256CLTTI-7 HM62V16256CI Hitachi
Hitachi -> Renesas Electronics
Description : Wide Temperature Range Version 4 M SRAM (256-KWORD 16-BIT) View

Description
The Hitachi HM62V16256CI Series is 4-Mbit static RAM organized 262,144-word × 16-BIT. HM62V16256CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 70 ns (max)
• Power dissipation:
    - Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
                : 6.0 mW/MHz (typ) (VCC = 3.0 V)
    - Standby: 2 µW (typ) (VCC = 2.5 V)
                   : 2.4 µW (typ) (VCC = 3.0 V)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.
    - 2 chip selection for battery backup
• Temperature range: –40 to +85°C

Part Name(s) : HM62V16256C HM62V16256CLTT-5 HM62V16256CLTT-5SL Renesas
Renesas Electronics
Description : 4 M SRAM (256-KWORD 16-BIT) View

Description
The Hitachi HM62V16256C Series is 4-Mbit static RAM organized 262,144-word × 16-BIT. HM62V16256C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55 ns (max)
• Power dissipation:
    - Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)
    - Standby: 2 µW (typ) (VCC = 2.5 V) : 2.4 µW (typ) (VCC = 3.0 V)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.
    - 2 chip selection for battery backup

Part Name(s) : HM62W16258B HM62W16258BLTT-5 HM62W16258BLTT-7 HM62W16258BLTT-5SL HM62W16258BLTT-7SL Renesas
Renesas Electronics
Description : 4 M SRAM (256-KWORD 16-BIT) View

Description
The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-BIT. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
    - Active: 9.9 mW (typ)
    - Standby: 3.3 µW (typ)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.

Part Name(s) : HM62V16258BLTT-7 HM62V16258BLTT-7SL HM62V16258BLTT-8 HM62V16258BLTT-8SL HM62V16258B Hitachi
Hitachi -> Renesas Electronics
Description : 4 M SRAM (256-KWORD 16-BIT) View

Description
The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word × 16-BIT. HM62V16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 70 ns/85 ns (max)
• Power dissipation:
    - Active: 9 mW (typ)
    - Standby: 3 µW (typ)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]