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Part Name(s) : NT256S72V89A0G NT256S72V89A0G-7K NT256S72V89A0G-75B NT256S72V89A0G-8B ETC1
Unspecified
Description : 32MX72 BIT ONE BANK UNBUFFERED SDRAM MODULE View

[Nanya]

Description
NT256S72V89A0G is UNBUFFERED 168-pin Synchronous DRAM Dual In-Line Memory MODULEs (DIMM) which is organized as 32MX72 high-speed memory arrays and is configured as ONE 32M x 72 physical BANK. The DIMM uses nine 32Mx8 SDRAMs in 400mil TSOP II packages. The DIMM achieves high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power.

Features
● 168-Pin UNBUFFERED 8-Byte Dual In-Line Memory MODULE
● Intended for PC133 applications
    - Clock Frequency: 133MHz
    - Clock Cycle: 7.5ns
    - Clock Assess Time: 5.4ns
● Inputs and outputs are LVTTL (3.3V) compatible
● Single 3.3V ± 0.3V Power Supply
● Single Pulsed RAS interface
SDRAMs have 4 internal BANKs
MODULE has 1 physical BANK
● Fully Synchronous to positive Clock Edge
● Data Mask for Byte Read/Write control
● Auto Refresh (CBR) and Self Refresh
● Automatic and controlled Precharge commands
● Programmable Operation:
    - CAS Latency: 2, 3
    - Burst Type: Sequential or Interleave
    - Burst Length: 1, 2, 4, 8
    - Operation: Burst Read and Write or Multiple Burst Read with Single Write
● Suspend Mode and Power Down Mode
● 8192 Refresh cycles distributed across 64ms
● Gold contacts
SDRAMs in TSOP Type II Package
● Serial Presence Detect with Write Protect

Part Name(s) : NT256S72V89A0G-75B NT256S72V89A0G-7K NT256S72V89A0G-8B NT256S72V89A0G Nanya
Nanya Technology
Description : 32MX72 BIT ONE BANK UNBUFFERED SDRAM MODULE based on 32Mx8, 4BANKs, 8K Refresh, 3.3V Synchronous DRAMs with SPD View

Description
NT256S72V89A0G is UNBUFFERED 168-pin Synchronous DRAM Dual In-Line Memory MODULEs (DIMM) which is organized as 32MX72 high-speed memory arrays and is configured as ONE 32M x 72 physical BANK. The DIMM uses nine 32Mx8 SDRAMs in 400mil TSOP II packages. The DIMM achieves high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power.

Features
● 168-Pin UNBUFFERED 8-Byte Dual In-Line Memory MODULE
● Intended for PC133 applications
    - Clock Frequency: 133MHz
    - Clock Cycle: 7.5ns
    - Clock Assess Time: 5.4ns
● Inputs and outputs are LVTTL (3.3V) compatible
● Single 3.3V ± 0.3V Power Supply
● Single Pulsed RAS interface
SDRAMs have 4 internal BANKs
MODULE has 1 physical BANK
● Fully Synchronous to positive Clock Edge
● Data Mask for Byte Read/Write control
● Auto Refresh (CBR) and Self Refresh
● Automatic and controlled Precharge commands
● Programmable Operation:
    - CAS Latency: 2, 3
    - Burst Type: Sequential or Interleave
    - Burst Length: 1, 2, 4, 8
    - Operation: Burst Read and Write or Multiple Burst Read with Single Write
● Suspend Mode and Power Down Mode
● 8192 Refresh cycles distributed across 64ms
● Gold contacts
SDRAMs in TSOP Type II Package
● Serial Presence Detect with Write Protect

Part Name(s) : HYS64V16220GU HYS64V16220GU-10 HYS64V16220GU-8 HYS64V16220GU-8B HYS64V8200GU HYS64V8200GU-10 HYS64V8200GU-8 HYS64V8200GU-8B HYS72V16220GU HYS72V16220GU-10 HYS72V16220GU-8 HYS72V8200GU HYS72V8200GU-10 HYS72V8200GU-8 PC66-222-920 Infineon
Infineon Technologies
Description : 3.3 V 8M 64/72-BIT 1 BANK SDRAM MODULE, 3.3 V 16M 64/72-BIT 2 BANK SDRAM MODULE View

3.3 V 8M × 64/72-BIT 1 BANK SDRAM MODULE
3.3 V 16M × 64/72-BIT 2 BANK SDRAM MODULE
168 pin UNBUFFERED DIMM MODULEs

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 BANK and 16M × 64 and 16M × 72 in two BANKs high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 MODULE specification.

• 168 Pin PC100-compatible UNBUFFERED 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 BANK 8M × 64, 8M × 72 and 2 BANK 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 MODULE specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads

Part Name(s) : HYS64V16220GU HYS64V16220GU-10 HYS64V16220GU-8 HYS64V16220GU-8B HYS64V8200GU HYS64V8200GU-10 HYS64V8200GU-8 HYS64V8200GU-8B HYS72V16220GU HYS72V16220GU-10 HYS72V16220GU-8 HYS72V8200GU HYS72V8200GU-10 HYS72V8200GU-8 PC66-222-920 Siemens
Siemens AG
Description : 3.3 V 8M 64/72-BIT 1 BANK SDRAM MODULE, 3.3 V 16M 64/72-BIT 2 BANK SDRAM MODULE View

3.3 V 8M × 64/72-BIT 1 BANK SDRAM MODULE
3.3 V 16M × 64/72-BIT 2 BANK SDRAM MODULE
168 pin UNBUFFERED DIMM MODULEs

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 BANK and 16M × 64 and 16M × 72 in two BANKs high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 MODULE specification.

• 168 Pin PC100-compatible UNBUFFERED 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 BANK 8M × 64, 8M × 72 and 2 BANK 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 MODULE specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads


Part Name(s) : HYS64V2200GU-10 HYS64V2200GU-8 HYS64V2200GU-8-3 HYS64V4220GU-10 HYS64V4220GU-8 HYS64V4220GU-8-3 HYS72V2200GU-10 HYS72V2200GU-8 HYS72V2200GU-8-3 HYS72V4220GU-10 HYS72V4220GU-8 HYS72V4220GU-8-3 Siemens
Siemens AG
Description : 3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE 3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE View

3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE
3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE
168 pin UNBUFFERED DIMM MODULEs

The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 BANK and 4M x 64 and 4M x 72 in two BANKs high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’ s PC SDRAM Rev.1.0 MODULE specification.

• 168 Pin PC100 and PC66 compatible UNBUFFERED 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 BANK 2M x 64, 2M x 72 and 2 BANK 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’ s Rev. 1.0 MODULE specification
SDRAM Performance
• Programmed Latencies :
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads

Part Name(s) : NT256D64S88AAG NT256D64S88AAG-7K NT256D64S88AAG-75B NT256D64S88AAG-8B Nanya
Nanya Technology
Description : 184pin ONE BANK UNBUFFERED DDR SDRAM MODULE Based on DDR266/200 32Mx8 SDRAM View

Description
NT256D64S88AAG is an UNBUFFERED 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory MODULE (DIMM), organized as a ONE-BANK high-speed memory array. The 32Mx64 MODULE is a single-BANK DIMM that uses eight 32Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 controls all devices on the DIMM.

Features
• 184-Pin UNBUFFERED 8-Byte Dual In-Line Memory MODULE
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance:
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
SDRAMs have 4 internal BANKs for concurrent operation
MODULE has ONE physical BANK
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
    - DIMM CAS Latency: 2, 2.5
    - Burst Type: Sequential or Interleave
    - Burst Length: 2, 4, 8
    - Operation: Burst Read and Write
• Auto-Refresh (CBR) and Self-Refresh Modes
• Automatic and controlled precharge commands
• 13/10/1 Addressing (row/column/BANK)
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
SDRAMs in 66-pin TSOP Type II Package

Part Name(s) : NT256D64S8HA0G-6 ETC1
Unspecified
Description : 184pin Two BANK UNBUFFERED DDR SDRAM MODULE View

[Nanya]

Description
NT256D64S8HA0G-6 is an UNBUFFERED 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory MODULE (DIMM), organized as a dual-BANK high-speed memory array. The 32Mx64 MODULE is a two-BANK DIMM that uses sixteen 16Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 333MHz. The DIMM is intended for use in applications operating from 133 MHz to 166 MHz clock speeds with data rates of 266 to 333 MHz. Clock enable CKE0 and / or CKE1 controls all devices on the DIMM.

Features
• 184-Pin UNBUFFERED 8-Byte Dual In-Line Memory MODULE
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance :
• Intended for 166 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
• Single Pulsed RAS interface
SDRAMs have 4 internal BANKs for concurrent operation
•  MODULE has two physical BANKs
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during Read cycles
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
    - DIMM CAS Latency: 2, 2.5
    - Burst Type: Sequential or Interleave
    - Burst Length: 2, 4, 8
    - Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 12/10/2 Addressing (row/column/BANK)
• 15.6 ms Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
SDRAMs in 66-pin TSOP Type II Package

Part Name(s) : NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-8B NT256D64S88A0G-75B ETC
Unspecified
Description : 184pin ONE BANK UNBUFFERED DDR SDRAM MODULE Based on DDR266/200 32Mx8 SDRAM View

[Nanya]

Description
NT256D64S88A0G is an UNBUFFERED 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory MODULE (DIMM), organized as a ONE-BANK high-speed memory array. The 32Mx64 MODULE is a single-BANK DIMM that uses eight 32Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 controls all devices on the DIMM.

Features
• 184-Pin UNBUFFERED 8-Byte Dual In-Line Memory MODULE
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance :
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
• Single Pulsed RAS interface
SDRAMs have 4 internal BANKs for concurrent operation
MODULE has ONE physical BANK
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during Read cycles •Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
    - DIMM CAS Latency: 2, 2.5
    - Burst Type: Sequential or Interleave
    - Burst Length: 2, 4, 8
    - Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/2 Addressing (row/column/BANK)
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
SDRAMs in 66-pin TSOP Type II Package

Part Name(s) : NT256D64S8HA0G-75B NT256D64S8HA0G-7K NT256D64S8HA0G-8B NT256D64S8HA0G Nanya
Nanya Technology
Description : 184pin Two BANK UNBUFFERED DDR SDRAM MODULE Based on DDR266/200 16Mx8 SDRAM View

Description
NT256D64S8HA0G is an UNBUFFERED 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory MODULE (DIMM), organized as a dual-BANK high-speed memory array. The 32Mx64 MODULE is a two-BANK DIMM that uses sixteen 16Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 and / or CKE1 controls all devices on the DIMM.

Features
• 184-Pin UNBUFFERED 8-Byte Dual In-Line Memory MODULE
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance :
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
• Single Pulsed RAS interface
SDRAMs have 4 internal BANKs for concurrent operation
MODULE has two physical BANKs
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during Read cycles
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
    - DIMM CAS Latency: 2, 2.5
    - Burst Type: Sequential or Interleave
    - Burst Length: 2, 4, 8
    - Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 12/10/2 Addressing (row/column/BANK)
• 15.6 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
SDRAMs in 66-pin TSOP Type II Package

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