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Part Name(s) : ST24E64 ST25E64 ST-Microelectronics
STMicroelectronics
Description : SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 64K (8K x 8) EEPROM

DESCRIPTION
The ST24/25E64 are 64K bit electrically erasable programmable memories (EEPROM), organized as 8 blocks of 1024x 8 bits. The ST25E64operates WITH a power supply value as low as 2.5V. Both PlasticDual-in-Line and PlasticSmallOutline pack
ages are available.

COMPATIBLE WITH I2C EXTENDED ADDRESSING
TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL
1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE
   – 4.5V to 5.5V for ST24E64 version
   – 2.5V to 5.5V for ST25E64 version
WRITE CONTROL FEATURE
BYTE and PAGE WRITE (up to 32 BYTES)
BYTE, RANDOM and SEQUENTIAL READ MODES
SELF TIMED PROGRAMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP PERFORMANCES

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Part Name(s) : ST24E16 ST25E16 ST-Microelectronics
STMicroelectronics
Description : 16 Kbit SERIAL I2C EEPROM WITH EXTENDED ADDRESSING

The ST24/25E16 are 16 Kbit electrically erasable programmable memories (EEPROM), organized as 8 blocks of 256 x8 bits. It is manufactured in STMicroelectronics’s Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles over the full supply voltage range, and a data retention of over 40 years. The ST25E16 operates WITH a power supply value as low as 2.5V.

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Part Name(s) : ST24E32 ST24E32B1TR ST24E32B3TR ST24E32B6TR ST24E32M1TR ST24E32M3TR ST24E32M6TR ST25E32 ST25E32B1TR ST25E32B3TR ST25E32B6TR ST25E32M1TR ST25E32M3TR ST25E32M6TR ST-Microelectronics
STMicroelectronics
Description : 32K SERIAL I2C EEPROM WITH EXTENDED ADDRESSING
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Part Name(s) : M34S32-WBN M34S32-WBN1T M34S32-WBN5T M34S32-WBN6T M34S32-WMN M34S32-WMN1T M34S32-WMN5T M34S32-WMN6T M34S32MN1T M34S32WMN5T M34S32BN1T M34S32MN6T M34S32WMN6T M34S32BN5T M34S32WBN1T M34S32BN6T M34S32WBN5T M34S32WBN6T M34S32MN M34S32MN5T M34S32WMN1T M34S32BN M34S32 ST-Microelectronics
STMicroelectronics
Description : 32K SERIAL I2C Bus EEPROM WITH User-Defined Read-Only Block and 32-Byte OTP Page

DESCRIPTION
The M34S32 is a 32K bit electrically erasable programmable memory (EEPROM), organized as 4096 x 8 bits.
   
■ TWO WIRE I2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL
■ COMPATIBLE WITH I2C EXTENDED ADDRESSING
■ 1 MILLION ERASE/WRITE CYCLES
■ 40 YEARS DATA RETENTION
■ SINGLE SUPPLY VOLTAGE
■ HARDWARE WRITE CONTROL
■ USER-DEFINED READ-ONLY BLOCK
■ 32 BYTES OTP PAGE
■ BYTE and PAGE WRITE (up to 32 BYTES)
■ BYTE, RANDOM and SEQUENTIAL READ MODES
■ SELF TIMED PROGRAMING CYCLE
■ AUTOMATIC ADDRESS INCREMENTING
■ ENHANCED ESD and LATCH-UP PERFORMANCES
   

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Part Name(s) : CAT24C256WI-GT3 CAT24C256WI-G ETC
Unspecified
Description : 256 kb I2C CMOS SERIAL EEPROM

[ON-Semiconductor]

Description
The CAT24C256 is a 256 kb SERIAL CMOS EEPROM, internally organized as 32,768 words of 8 bits each.
It features a 64−byte page write buffer and supports both the Standard (100 kHz) as well as Fast (400 kHz) I2C protocol.
Write operations can be inhibited by taking the WP pin High (this protects the entire memory).
External address pins make it possible to address up to eight CAT24C256 devices on the same bus.

Features
• Supports Standard and Fast I2C Protocol
• 1.8 V to 5.5 V Supply Voltage Range
• 64−Byte Page Write Buffer
• Hardware Write Protection for Entire Memory
• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs
   (SCL and SDA)
• Low Power CMOS Technology
• 1,000,000 Program/Erase Cycles
• 100 Year Data Retention
• Industrial and EXTENDED Temperature Range
• PDIP, SOIC, TSSOP and TDFN 8−lead Packages
• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
   Compliant

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Part Name(s) : CAT24WC33J-1.8TE13 CAT24WC33JA-1.8TE13 CAT24WC33JI-1.8TE13 CAT24WC33KA-1.8TE13 CAT24WC33KI-1.8TE13 CAT24WC33P-1.8TE13 CAT24WC33PA-1.8TE13 Catalyst
Catalyst Semiconductor => Onsemi
Description : 1.8V-6.0V 32K-bit IIC SERIAL CMOS EEPROM

The CAT24WC33/65 is a 32K/64K-bit SERIAL CMOS E2PROM internally organized as 4096/8192 words of 8 bits each. Catalyst’s advanced CMOS technology sub stantially reduces device power requirements. The CAT24WC33/65 features a 32-byte page write buffer. The device operates via the I2C bus SERIAL interface and s available in 8-pin DIP or 8-pin SOIC packages.

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Part Name(s) : BR24E08F BR24C08 BR24C08F BR24C08FJ BR24C08FV BR24C16 BR24C16F BR24C16FJ BR24C16FV BR24E16 BR24E16F BR24E16FJ BR24E16FV ROHM
ROHM Semiconductor
Description : I2C BUS compatible SERIAL EEPROM

The BR24C08, BR24C16 and BR24E16 series are 2-wire (I2C BUS type) SERIAL EEPROMs which are electrically programmable.

Features
1) 1k x 8 bits SERIAL EEPROM. (BR24C08 / F / FJ / FV) 2k x 8 bits SERIAL EEPROM. (BR24C16 / F / FJ / FV, BR24E16 / F / FJ / FV)
2) Two wire SERIAL interface. (2Byte Address : BR24E16)
3) Operating voltage range : 2.7V∼5.5V
4) Low current consumption
    Active (at 5V) : 2.0mA (Typ.)
    Standby (at 5V) : 1.0µA (Typ.)
5) Auto erase and auto complete functions can be used during write operations.
6) Page write function : 16byte
7) DATA security Write protect feature Inhibit to WRITE at low Vcc
8) Noise filters at SCL and SDA pins.
9) Address can be incremented automatically during read operations.
10) Compact packages.
11) Rewriting possible up to 100,000 times.
12) Data can be stored for ten years WITHout corruption.

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Part Name(s) : BR24C01A-W BR24C01AF-W BR24C01AFJ-W BR24C01AFV-W BR24C02-W BR24C02F-W BR24C02FJ-W BR24C02FV-W BR24C04-W BR24C04F-W BR24C04FJ-W BR24C04FV-W ROHM
ROHM Semiconductor
Description : I2C BUS compatible SERIAL EEPROM

The BR24C01A-W, BR24C02-W, and BR24C04-W series are 2-wire (I2C BUS type) SERIAL EEPROMs which are electrically programmable.

Features
1) 128×8bits (1k) SERIAL EEPROM.
   (BR24C01A-W / AF-W / AFJ-W / AFV-W)
      256×8bits (2k) SERIAL EEPROM.
   (BR24C02-W / F-W / FJ-W / FV-W)
      512×8bits (4k) SERIAL EEPROM.
   (BR24C04-W / F-W / FJ-W / FV-W)
2) Two wire SERIAL interface.
3) Operating voltage range : 2.7V∼5.5V
4) Low current consumption
   Active (at 5V) : 1.5mA (Typ.)
   Standby (at 5V) : 0.1µA (Typ.)
5) Auto erase and auto complete functions can be used
   during write operations.
6) Page write function.
   BR24C01A-W / AF-W / AFJ-W / AFV-W : 8 bytes
   BR24C02-W / F-W / FJ-W / FV-W : 8 bytes
   BR24C04-W / F-W / FJ-W / FV-W : 16 bytes
7) DATA security
   Write protect feature
   Inhibit to WRITE at low VCC
8) Noise filters at SCL and SDA pins.
9) Address can be incremented automatically during
   read operations.
10) Compact packages.
11) Rewriting possible up to 100,000 times
12) Data can be stored for ten years WITHout corruption.

Applications
   VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches

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Part Name(s) : M24256-W M24256BN5T M24256BN6T M24256MN5T M24256MN6T M24256MW5T M24256MW6T ST-Microelectronics
STMicroelectronics
Description : 256/128 Kbit SERIAL I²C Bus EEPROM WITHout Chip Enable Lines

DESCRIPTION
These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organized as 32Kx8 bits (M24256) and 16Kx8 bits (M24128), and operate down to 2.5 V (for the -W version of each device).
The M24256B, M24128B and M24256A are also available, and offer the extra functionality of the chip enable inputs. Please see the separate data sheets for details of these products.

■Compatible WITH I2C EXTENDED ADDRESSING
■Two Wire I2C SERIAL Interface Supports 400 kHz Protocol
■Single Supply Voltage:
  – 4.5V to 5.5V for M24xxx
  – 2.5V to 5.5V for M24xxx-W
■Hardware Write Control
■BYTE and PAGE WRITE (up to 64 Bytes)
■RANDOM and SEQUENTIAL READ Modes
■Self-Timed Programming Cycle
■Automatic Address Incrementing
■Enhanced ESD/Latch-Up Behavior
■More than 100,000 Erase/Write Cycles
■More than 40 Year Data Retention

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Part Name(s) : 24AA32-/SN 24AA32-SN 24AA32T-/SN 24AA32T-SN 24AA32T_/SN 24AA32_/SN Microchip
Microchip Technology
Description : 32K 1.8V I2C™ Smart SERIAL EEPROM

DESCRIPTION
The Microchip Technology Inc. 24AA32 is a 4K x 8 (32K bit) SERIAL Electrically Erasable PROM capable of oper ation across a broad voltage range (1.8V to 6.0V). This device has been developed for advanced, low power applications such as personal communications or data acquisition. The 24AA32 features an input cache for fast write loads WITH a capacity of eight 8-byte pages, or 64 bytes. It also features a fixed 4K-bit block of ultra high endurance memory for data that changes frequently. The 24AA32 is capable of both random and sequential reads up to the 32K boundary. Functional address lines allow up to 8 - 24AA32 devices on the same bus, for up to 256K bits address space.

FEATURES
• Voltage operating range: 1.8V to 6.0V
   - Peak write current 3 mA at 6.0V
   - Maximum read current 150 µA at 6.0V
   - Standby current 1 µA typical
• Industry standard two-wire bus protocol, I2C™ compatible
   - Including 100 kHz (1.8V) and 400 kHz (5V) modes
• Self-timed ERASE and WRITE cycles
• Power on/off data protection circuitry
• Endurance:
   - 10,000,000 Erase/Write (E/W) cycles guaranteed for High Endurance Block
   - 1,000,000 E/W cycles guaranteed for Standard Endurance Block
• 8 byte page, or byte modes available
• 1 page x 8 line input cache (64 bytes) for fast write loads
• Schmitt trigger, filtered inputs for noise suppression
• Output slope control to eliminate ground bounce
• 2 ms typical write cycle time, byte or page
• Factory programming (QTP) available
• Up to 8 devices may be connected to the same bus for up to 256K bits total memory
• Electrostatic discharge protection > 4000V
• Data retention > 200 years
• 8-pin PDIP/SOIC packages
• Temperature ranges
   - Commercial (C): 0°C to +70°C

 

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