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Part Name(s) : HYS64V16220GU HYS64V16220GU-10 HYS64V16220GU-8 HYS64V16220GU-8B HYS64V8200GU HYS64V8200GU-10 HYS64V8200GU-8 HYS64V8200GU-8B HYS72V16220GU HYS72V16220GU-10 HYS72V16220GU-8 HYS72V8200GU HYS72V8200GU-10 HYS72V8200GU-8 PC66-222-920 Infineon
Infineon Technologies
Description : 3.3 V 8M 64/72-BIT 1 Bank SDRAM MODULE, 3.3 V 16M 64/72-BIT 2 Bank SDRAM MODULE View

3.3 V 8M × 64/72-BIT 1 Bank SDRAM MODULE
3.3 V 16M × 64/72-BIT 2 Bank SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 MODULE specification.

• 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 MODULE specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads

Part Name(s) : HYS64V16220GU HYS64V16220GU-10 HYS64V16220GU-8 HYS64V16220GU-8B HYS64V8200GU HYS64V8200GU-10 HYS64V8200GU-8 HYS64V8200GU-8B HYS72V16220GU HYS72V16220GU-10 HYS72V16220GU-8 HYS72V8200GU HYS72V8200GU-10 HYS72V8200GU-8 PC66-222-920 Siemens
Siemens AG
Description : 3.3 V 8M 64/72-BIT 1 Bank SDRAM MODULE, 3.3 V 16M 64/72-BIT 2 Bank SDRAM MODULE View

3.3 V 8M × 64/72-BIT 1 Bank SDRAM MODULE
3.3 V 16M × 64/72-BIT 2 Bank SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 MODULE specification.

• 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 MODULE specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads

Part Name(s) : HYS64V8000GU-10 HYS72V8000GU-10 Infineon
Infineon Technologies
Description : 3.3V 8M x 64-BIT SDRAM MODULE 3.3V 8M x 72-BIT SDRAM MODULE View

The HYS64(72)V8000GU-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 8M x 64 and 8M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 8M x 8 SDRAMs for the 8M x 64 organisation and an additional SDRAM for the 8M x 72 organisation. Decoupling capacitors are mounted on the PC board.

168 pin unbuffered DIMM MODULEs

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M x 64, 8M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 8M x 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 25,40mm x 4,00 mm

Part Name(s) : HYS64V8000GU-10 HYS72V8000GU-10 Siemens
Siemens AG
Description : 3.3V 8M x 64-BIT SDRAM MODULE 3.3V 8M x 72-BIT SDRAM MODULE View

The HYS64(72)V8000GU-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 8M x 64 and 8M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 8M x 8 SDRAMs for the 8M x 64 organisation and an additional SDRAM for the 8M x 72 organisation. Decoupling capacitors are mounted on the PC board.

168 pin unbuffered DIMM MODULEs

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M x 64, 8M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 8M x 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 25,40mm x 4,00 mm


Part Name(s) : HYS64V2200GU-10 HYS64V2200GU-8 HYS64V2200GU-8-3 HYS64V4220GU-10 HYS64V4220GU-8 HYS64V4220GU-8-3 HYS72V2200GU-10 HYS72V2200GU-8 HYS72V2200GU-8-3 HYS72V4220GU-10 HYS72V4220GU-8 HYS72V4220GU-8-3 Siemens
Siemens AG
Description : 3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE 3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE View

3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE
3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’ s PC SDRAM Rev.1.0 MODULE specification.

• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’ s Rev. 1.0 MODULE specification
SDRAM Performance
• Programmed Latencies :
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads

Part Name(s) : HYS64V2100GU-10 HYS72V2100GU-10 HYS64V2100GCU-10 HYS72V2100GCU-10 Siemens
Siemens AG
Description : 3.3V 2M x 64-BIT SDRAM MODULE 3.3V 2M x 72-BIT SDRAM MODULE View

3.3V 2M x 64-BIT SDRAM MODULE
3.3V 2M x 72-BIT SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 2M x 8 SDRAMs for the 2M x 64 organisation and an additional SDRAM for the 2M x 72 organisation. Decoupling capacitors are mounted on the PC board.

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULE for PC main memory applications
• 1 bank 2M x 64, 2M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU
• HYS64/72V2100GCU in chip-on-board technique
• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU

Part Name(s) : HYM64V8005GU-50 HYM64V8005GU-60 HYM64V8045GU-50 HYM64V8045GU-60 HYM72V8005GU-50 HYM72V8005GU-60 HYM72V8045GU-50 HYM72V8045GU-60 Q67100-Q2188 Q67100-Q2189 Siemens
Siemens AG
Description : 3.3V 8M 64-BIT EDO-DRAM MODULE 3.3V 8M x 72-BIT EDO-DRAM MODULE View

The HYM64(72)V2005/45GU-50/-60 are industry standard 168-pin 8-byte Dual In-Line Memory MODULEs (DIMMs) which are organized as 8M x 64 and 8M x 72 high speed memory arrays designed with EDO DRAMs for non-parity and ECC applications. 4k refresh with 12 / 11 addressing and 8k refresh MODULEs with 13 / 10 addressing are available.The DIMMs use eight 8M x 8 EDO DRAMs for the 8M x 64 organisation and nine 8M x 8 DRAMs for the 8M x 72 organisation, both in TSOPII packages. Decoupling capacitors are mounted on the PC board.

168pin unbuffered DIMM MODULE with serial presence detect

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory MODULE for PC main memory applications
• 1 bank 8M x 64, 8M x 72 in 4k and 8k refresh organisation
• Optimized for byte-write non-parity or ECC applications
• Extended Data Out (EDO)
• Performance:
• Single +3.3 V ± 0.3 V Power Supply
• CAS-before-RAS refresh, RAS-only-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clocks are fully LV-TTL compatible
• Serial presence detects (optional)
• Utilizes 8M × 8 -DRAMs in TSOPII packages
• 4096 refresh cycles / 64 ms with 12 / 11 addressing (Row / Column) for HYM64/72V8005GU
• 8192 refresh cycles / 128 ms with 13 / 10 addressing (Row / Column) for HYM64/72V8045GU
• Gold contact pad
• Card Size: 133,35mm x 25,40 mm x 4,00 mm
• This DRAM product MODULE family is intended to be fully pin and architecture compatible with the 168pin unbuffered SDRAM DIMM MODULE family

Part Name(s) : HYM64V8005GU-50 HYM64V8005GU-60 HYM64V8045GU-50 HYM64V8045GU-60 HYM72V8005GU-50 HYM72V8005GU-60 HYM72V8045GU-50 HYM72V8045GU-60 Q67100-Q2188 Q67100-Q2189 Infineon
Infineon Technologies
Description : 3.3V 8M 64-BIT EDO-DRAM MODULE 3.3V 8M x 72-BIT EDO-DRAM MODULE View

The HYM64(72)V2005/45GU-50/-60 are industry standard 168-pin 8-byte Dual In-Line Memory MODULEs (DIMMs) which are organized as 8M x 64 and 8M x 72 high speed memory arrays designed with EDO DRAMs for non-parity and ECC applications. 4k refresh with 12 / 11 addressing and 8k refresh MODULEs with 13 / 10 addressing are available.The DIMMs use eight 8M x 8 EDO DRAMs for the 8M x 64 organisation and nine 8M x 8 DRAMs for the 8M x 72 organisation, both in TSOPII packages. Decoupling capacitors are mounted on the PC board.

168pin unbuffered DIMM MODULE with serial presence detect

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory MODULE for PC main memory applications
• 1 bank 8M x 64, 8M x 72 in 4k and 8k refresh organisation
• Optimized for byte-write non-parity or ECC applications
• Extended Data Out (EDO)
• Performance:
• Single +3.3 V ± 0.3 V Power Supply
• CAS-before-RAS refresh, RAS-only-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clocks are fully LV-TTL compatible
• Serial presence detects (optional)
• Utilizes 8M × 8 -DRAMs in TSOPII packages
• 4096 refresh cycles / 64 ms with 12 / 11 addressing (Row / Column) for HYM64/72V8005GU
• 8192 refresh cycles / 128 ms with 13 / 10 addressing (Row / Column) for HYM64/72V8045GU
• Gold contact pad
• Card Size: 133,35mm x 25,40 mm x 4,00 mm
• This DRAM product MODULE family is intended to be fully pin and architecture compatible with the 168pin unbuffered SDRAM DIMM MODULE family

Part Name(s) : V436516R04VATG-75 Mosel-Vitelic
Mosel Vitelic Corporation
Description : 3.3 VOLT 16M x 64 (using 8M x 16) PC133 UNBUFFERED SDRAM MODULE View

Description
The V436516R04VATG-75 memory MODULE is organized 16, 777, 216 x 64 bits in a 168 pin dual in line memory MODULE (DIMM). The 16M x 64 memory MODULE uses 8 Mosel-Vitelic 8M x 16 SDRAM. The x64 MODULEs are ideal for use in high performance computer systems where increased memory density and fast access times are required.

Features
■ 168 Pin Unbuffered 16, 777, 216 x 64 bit Oganization SDRAM DIMM
■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages
■ Fully PC Board Layout Compatible to INTEL’S Rev 1.0 MODULE Specification
■ Single +3.3V (± 0.3V) Power Supply
■ Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
■ Auto Refresh (CBR) and Self Refresh
■ All Inputs, Outputs are LVTTL Compatible
■ 4096 Refresh Cycles every 64 ms
■ Serial Present Detect (SPD)
SDRAM Performance

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