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Part Name(s) : HYS64V2100GU-10 HYS72V2100GU-10 HYS64V2100GCU-10 HYS72V2100GCU-10 Siemens
Siemens AG
Description : 3.3V 2M x 64-BIT SDRAM MODULE 3.3V 2M x 72-BIT SDRAM MODULE View

3.3V 2M x 64-BIT SDRAM MODULE
3.3V 2M x 72-BIT SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 2M x 8 SDRAMs for the 2M x 64 organisation and an additional SDRAM for the 2M x 72 organisation. Decoupling capacitors are mounted on the PC board.

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULE for PC main memory applications
• 1 bank 2M x 64, 2M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU
• HYS64/72V2100GCU in chip-on-board technique
• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU

Part Name(s) : HYS64V2200GU-8 HYS72V2200GU-8 HYS64V4220GU-8 HYS72V4220GU-8 HYS64V2200GU-8-3 HYS72V2200GU-8-3 HYS64V4220GU-8-3 HYS72V4220GU-8-3 HYS64V2200GU-10 HYS72V2200GU-10 HYS64V4220GU-10 HYS72V4220GU-10 Infineon
Infineon Technologies
Description : 3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE 3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE View

3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE
3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’ s PC SDRAM Rev.1.0 MODULE specification.

• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’ s Rev. 1.0 MODULE specification
SDRAM Performance
• Programmed Latencies :
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads

Part Name(s) : HYS64V2200GU-10 HYS64V2200GU-8 HYS64V2200GU-8-3 HYS64V4220GU-10 HYS64V4220GU-8 HYS64V4220GU-8-3 HYS72V2200GU-10 HYS72V2200GU-8 HYS72V2200GU-8-3 HYS72V4220GU-10 HYS72V4220GU-8 HYS72V4220GU-8-3 Siemens
Siemens AG
Description : 3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE 3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE View

3.3V 2M x 64/72-BIT 1 BANK SDRAM MODULE
3.3V 4M x 64/72-BIT 2 BANK SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’ s PC SDRAM Rev.1.0 MODULE specification.

• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’ s Rev. 1.0 MODULE specification
SDRAM Performance
• Programmed Latencies :
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads

Part Name(s) : HYS64V2100GU-10 HYS72V2100GU-10 HYS64V2100GCU-10 HYS72V2100GCU-10 Infineon
Infineon Technologies
Description : 2M x 64/72 SDRAM-MODULE View

3.3V 2M x 64-BIT SDRAM MODULE
3.3V 2M x 72-BIT SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 2M x 8 SDRAMs for the 2M x 64 organisation and an additional SDRAM for the 2M x 72 organisation. Decoupling capacitors are mounted on the PC board.

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULE for PC main memory applications
• 1 bank 2M x 64, 2M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU
• HYS64/72V2100GCU in chip-on-board technique
• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU


Part Name(s) : HYS64V16220GU HYS64V16220GU-10 HYS64V16220GU-8 HYS64V16220GU-8B HYS64V8200GU HYS64V8200GU-10 HYS64V8200GU-8 HYS64V8200GU-8B HYS72V16220GU HYS72V16220GU-10 HYS72V16220GU-8 HYS72V8200GU HYS72V8200GU-10 HYS72V8200GU-8 PC66-222-920 Siemens
Siemens AG
Description : 3.3 V 8M 64/72-BIT 1 Bank SDRAM MODULE, 3.3 V 16M 64/72-BIT 2 Bank SDRAM MODULE View

3.3 V 8M × 64/72-BIT 1 Bank SDRAM MODULE
3.3 V 16M × 64/72-BIT 2 Bank SDRAM MODULE
168 pin unbuffered DIMM MODULEs

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. MODULEs which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 MODULE specification.

• 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 MODULE specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads

Part Name(s) : HYS64V8000GU-10 HYS72V8000GU-10 Infineon
Infineon Technologies
Description : 3.3V 8M x 64-BIT SDRAM MODULE 3.3V 8M x 72-BIT SDRAM MODULE View

The HYS64(72)V8000GU-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 8M x 64 and 8M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 8M x 8 SDRAMs for the 8M x 64 organisation and an additional SDRAM for the 8M x 72 organisation. Decoupling capacitors are mounted on the PC board.

168 pin unbuffered DIMM MODULEs

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M x 64, 8M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 8M x 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 25,40mm x 4,00 mm

Part Name(s) : HYS64V8000GU-10 HYS72V8000GU-10 Siemens
Siemens AG
Description : 3.3V 8M x 64-BIT SDRAM MODULE 3.3V 8M x 72-BIT SDRAM MODULE View

The HYS64(72)V8000GU-10 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 8M x 64 and 8M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 8M x 8 SDRAMs for the 8M x 64 organisation and an additional SDRAM for the 8M x 72 organisation. Decoupling capacitors are mounted on the PC board.

168 pin unbuffered DIMM MODULEs

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULEs for PC main memory applications
• 1 bank 8M x 64, 8M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 8M x 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 25,40mm x 4,00 mm

Part Name(s) : HYM72V2005GS-60 HYM72V2005GS-50 Siemens
Siemens AG
Description : 2M 72-BIT EDO-DRAM MODULE (ECC - MODULE) View

2M × 72-BIT EDO-DRAM MODULE (ECC - MODULE)
168 pin buffered DIMM MODULE

The HYM 72V2005GS-50/-60 is a 16 MByte DRAM MODULE organized as 2 097 152 words by 72- bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3117805BSJ 2M × 8 EDO DRAMs in 400 mil wide SOJ-28 - packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/line drivers.

• 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory MODULE for PC main memory applications
• 1 bank 2 M x 72 organisation
• Optimized for ECC applications
• Extended Data Out (EDO)
• Single + 3.3V ± 0.3 V supply
• CAS-before-RAS refresh, RAS-only refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence Detects
• Utilizes nine 2M × 8 -DRAMs and BiCMOS buffers/line drivers
• 2048 refresh cycles / 32 ms with 11 / 10 addressing
• Gold contact pad
• Double sided MODULE with 25.35 mm (1000 mil) height

Part Name(s) : HYS64V1000GS HYS64V1000GU-50 HYS64V1000GU-60 HYS64V1000GU-70 HYS72V1000GS HYS72V1000GU-50 HYS72V1000GU-70 HYS64V1000GS-10 HYS64V1000GS-12 HYS64V1000GS-15 HYS72V1000GS-10 HYS72V1000GS-12 HYS72V1000GS-15 Siemens
Siemens AG
Description : 3.3V 1M x 64-BIT SDRAM MODULE 3.3V 1M x 72-BIT SDRAM MODULE View

168 pin unbuffered DIMM MODULEs

The HYS64(72)V1000GS-10/-12/-15 are industry standard 168-pin 8-byte Dual in-line Memory MODULEs (DIMMs) which are organised as 1M x 64 and 1M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use four 1M x 16 SDRAMs for the 1M x 64 organisation and an additional SDRAM for the 1M x 72 organisation. Decoupling capacitors are mounted on the PC board.

Target Information
• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM MODULE
• 1 bank 1M x 64, 1M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial presence detects
• Utilizes four / five 1M x 16 SDRAMs in TSOPII-50 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 25,40mm x 3,00 mm
• This SDRAM product familiy is intended to be fully pin and architecture compatible with the 168 pin Unbuffered DRAM DIMM MODULE family.

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