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Part Name(s) : IRF9510
Intersil
Intersil
Description : 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
3.0A, 100V
• rDS(ON) = 1.200
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRF9140
Intersil
Intersil
Description : -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

These are P-Channel enhancement mode silicon gate Power field effect transistors. They are advanced Power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• -19A, -100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : IRFD9120
Intersil
Intersil
Description : 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

This advanced Power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 1.0A, 100V
• rDS(ON) = 0.6Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRFD9110
Intersil
Intersil
Description : 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRFD9110
Fairchild
Fairchild Semiconductor
Description : 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRF9520
Intersil
Intersil
Description : 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

This advanced Power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Description : 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

These are advanced Power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate Power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17541.

Features
• 3.1A, 100V
• rDS(ON) = 1.200
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Part Name(s) : IRFP9140
Intersil
Intersil
Description : 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

This is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate Power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits. Formerly developmental type TA17521.

Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : RFL1N10L
Intersil
Intersil
Description : 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

Description
This is an N-Channel enhancement mode silicon gate Power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off Power control directly from logic circuit supply voltages.

Features
• 1A, 100V
• rDS(ON) = 1.200

Part Name(s) : RFL1P08 RFL1P10
NJSEMI
New Jersey Semiconductor
Description : 1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

Description
These are P-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 1 A, -80V and -100V
• rDS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

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