P/N + Description + Content Search

This P-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

These are P-Channel enhancement mode silicon gate Power field effect transistors. They are advanced Power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• -19A, -100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

This advanced Power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 1.0A, 100V
• rDS(ON) = 0.6Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

This P-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

This P-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

This advanced Power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

These are advanced Power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate Power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17541.

Features
• 3.1A, 100V
• rDS(ON) = 1.200Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

This is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate Power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits. Formerly developmental type TA17521.

Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Description
This is an N-Channel enhancement mode silicon gate Power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off Power control directly from logic circuit supply voltages.

Features
• 1A, 100V
• rDS(ON) = 1.200Ω

Description
These are P-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
• 1 A, -80V and -100V
• rDS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device