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Description
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened POWER MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 30A, -100V, RDS(on) = 0.095Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 10.0nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

9A, 100V, 0.250 OHM, N-Channel POWER MOSFET

This is an N-Channel enhancement mode silicon gate POWER field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. This type can be operated directly from integrated circuits.

Features
• 9A, 100V
• rDS(ON) = 0.250Ω
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
  -TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

5.6A, 100V, 0.540 OHM, N-Channel POWER MOSFET
This N-Channel enhancement mode silicon gate POWER field effect transistor is an advanced POWER MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these POWER MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. These types can be operated directly from integrated circuits.

Features
• 5.6A, 100V
•rDS(ON)= 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

HEXFET POWER MOSFET. VDSS = 100V, RDS(on) = 0.54 OHM, ID = 5.6A

Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened POWER MOSFETs of both N-Channel and P-CHANNEL enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 25A, 100V, rDS(ON) = 0.070Ω
• Total Dose
    - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
    - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
    - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
    - 7.0nA Per-RAD(Si)/s Typically
• Neutron
    - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

This advanced POWER MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-CHANNEL enhancement mode silicon gate POWER field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. These types can be operated directly from integrated circuits.

Features
• 1.0A, 100V
• rDS(ON) = 0.6Ω
• Single Pulse Avalanche Energy Rated
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

12A, 80V and 100V, 0.300 OHM, P-CHANNEL POWER MOSFETs

The RFP12P08, and RFP12P10 are P-CHANNEL enhancement mode silicon gate POWER field effect transistors
designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. These types can be operated directly from integrated circuits.

Features
• 12A, 80V and 100V
• rDS(ON)= 0.300Ω
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
  Components to PC Boards”

This P-CHANNEL enhancement mode silicon gate POWER field effect transistor is an advanced POWER MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these POWER MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

This P-CHANNEL enhancement mode silicon gate POWER field effect transistor is an advanced POWER MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these POWER MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance