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Part Name(s) : M6MFT16S2TP M6MFB16S2TP Mitsubishi
MITSUBISHI ELECTRIC
Description : 16777216-BIT(2M x 8-BIT/1Mx 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY View

DESCRIPTION
The MITSUBISHI M6MFB/T16S2TP is a Multi Chip Package (MCP) that contents 16-Mbit FLASH MEMORY and 2M-BIT Staic RAM in a 82-pin TSOP(TYPE-II).

Part Name(s) : MX28F2000T MX28F2000TPC MX28F2000TPC-12C4 MX28F2000TPC-90C4 MX28F2000TQC MX28F2000TQC-12C4 MX28F2000TQC-90C4 Macronix
Macronix International
Description : 2M-BIT [256K x 8] CMOS FLASH MEMORY View

GENERAL DESCRIPTION
The MX28F2000T is a 2-mega bit FLASH MEMORY or ganized as 256K bytes of 8 bits each. MXIC's FLASH memories offer the most cost-effective and reliable read/write non-volatile random access MEMORY. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased in system or in-standard EPROM programmers.

FEATURES
• 262,144 bytes by 8-bit organization
• Fast access time: 90/120 ns
• Low power consumption
   – 50mA maximum active current
   – 100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
   – Byte Programming (15us typical)
   – Auto chip erase 5 seconds typical (including preprogramming time)
   – Block Erase
• Optimized high density blocked architecture
   – Eight 4-KB blocks
   – Fourteen 16-KB blocks
• Auto Erase (chip & block) and Auto Program
   – DATA polling
   – Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS FLASH MEMORY technology
• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
• Package type:
   – 32-pin plastic DIP
   – 32-pin PLCC

 

Part Name(s) : MX28F2000T MX28F2000TPC MX28F2000TPC-12C4 MX28F2000TPC-90C4 MX28F2000TQC MX28F2000TQC-12C4 MX28F2000TQC-90C4 MCNIX
Macronix International
Description : 2M-BIT [256K x 8] CMOS FLASH MEMORY View

GENERAL DESCRIPTION
The MX28F2000T is a 2-mega bit FLASH MEMORY or ganized as 256K bytes of 8 bits each. MXIC's FLASH memories offer the most cost-effective and reliable read/write non-volatile random access MEMORY. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased in system or in-standard EPROM programmers.

FEATURES
• 262,144 bytes by 8-bit organization
• Fast access time: 90/120 ns
• Low power consumption
   – 50mA maximum active current
   – 100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
   – Byte Programming (15us typical)
   – Auto chip erase 5 seconds typical (including preprogramming time)
   – Block Erase
• Optimized high density blocked architecture
   – Eight 4-KB blocks
   – Fourteen 16-KB blocks
• Auto Erase (chip & block) and Auto Program
   – DATA polling
   – Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS FLASH MEMORY technology
• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
• Package type:
   – 32-pin plastic DIP
   – 32-pin PLCC

 

Part Name(s) : LH28F320BJE-PBTL90 LHF32J06 Sharp
Sharp Electronics
Description : FLASH MEMORY 32M (2M 16/4M 8) View

FLASH MEMORY 32M (2M × 16/4M × 8)


Part Name(s) : 25Q20BWNIP W25Q20BWSNIP W25Q20BWUXIP W25Q20BWZPIP Winbond
Winbond
Description : 1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI View

GENERAL DESCRIPTION
The W25Q20BW (2M-BIT) Serial FLASH MEMORY provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial FLASH devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space saving packages.

FEATURES
• Family of SpiFLASH Memories
   – W25Q20BW: 2M-BIT/256K-byte (262,144)
   – 256-byte per programmable page
   – Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
   – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
   – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
• Highest Performance Serial FLASH
   – 80MHz Dual/Quad SPI clocks
   – 160/320MHz equivalent Dual/Quad SPI
   – 40MB/S continuous data transfer rate
   – Up to 6X that of ordinary Serial FLASH
   – More than 100,000 erase/program cycles
   – More than 20-year data retention
• Efficient “Continuous Read Mode”
   – Low Instruction overhead
   – Continuous Read with 8/16/32/64-Byte Wrap
   – As few as 8 clocks to address MEMORY
   – Allows true XIP (execute in place) operation
   – Outperforms X16 Parallel FLASH
• Low Power, Wide Temperature Range
   – Single 1.65 to 1.95V supply
   – 4mA active current, <1µA Power-down current
   – -40°C to +85°C operating range
• Flexible Architecture with 4KB sectors
   – Uniform Sector Erase (4K-bytes)
   – Uniform Block Erase (32K and 64K-bytes)
   – Program one to 256 bytes
   – Erase/Program Suspend & Resume
• Advanced Security Features
   – Software and Hardware Write-Protect
   – Top/Bottom, 4KB complement array protection
   – Lock-Down and OTP array protection(1)
   – 64-Bit Unique Serial Number for each device
   – 4X256-Byte Security Registers with OTP locks
   – Volatile & Non-volatile Status Register Bits
• Space Efficient Packaging
   – 8-pin SOIC 150-mil
   – 8-pad WSON 6x5-mm, USON 2x3-mm
   – Contact Winbond for KGD and other options

 

Part Name(s) : 25X10BLIG 25X10BLNIG 25X20BLIG 25X20BLNIG 25X40BLAIG 25X40BLIG 25X40BLNIG 25X40BLSIG W25X10BL W25X10BLSNIG W25X10BLZPIG W25X20BL W25X20BLSNIG W25X20BLZPIG W25X40BL W25X40BLDAIG W25X40BLSNIG W25X40BLSSIG W25X40BLZPIG Winbond
Winbond
Description : 1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI View

GENERAL DESCRIPTION
The W25X10BL (1M-bit), W25X20BL (2M-BIT) and the W25X40BL (4M-bit) Serial FLASH memories provides a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial FLASH devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.3V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving packages.


FEATURES
• Family of Serial FLASH Memories
– W25X10BL: 1M-bit/128K-byte (131,072)
– W25X20BL: 2M-BIT/256K-byte (262,144)
– W25X40BL: 4M-bit/512K-byte (524,288)
– 256-bytes per programmable page
– Uniform 4KB Sectors, 32KB & 64KB Blocks
• SPI with Single / Dual Outputs / Dual I/O
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
• Data Transfer up to 100M-bits / second
– Clock operation to 50MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
• Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read
– As few as 8 clocks to address MEMORY
– Allows true XIP (execute in place) operation
• Software and Hardware Write Protection
– Write-Protect all or portion of MEMORY
– Enable/Disable protection with /WP pin
– Top or bottom array protection
– Volatile & Non-volatile Status Register Bits
• Flexible Architecture with 4KB sectors
– Sector Erase (4K-bytes)
– Block Erase (32K and 64K-byte)
– Page program up to 256 bytes <1ms
– More than 100,000 erase/write cycles
– More than 20-year retention
• Low Power Consumption, Wide
Temperature Range
– Single 2.3 to 3.6V supply
– 4mA active current, 1µA Power-down (typ)
– -40° to +85°C operating range
• Space Efficient Packaging
– 8-pin SOIC 150-mil
– 8-pin SOIC 208-mil
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil

Part Name(s) : TC5816BDC Toshiba
Toshiba
Description : 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM View

16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM

Part Name(s) : MX28F2000P MX28F2000PPC-12C4 MX28F2000PPC-70C4 MX28F2000PPC-90C4 MX28F2000PQC-12C4 MX28F2000PQC-70C4 MX28F2000PQC-90C4 MX28F2000PRC-12C4 MX28F2000PRC-70C4 MX28F2000PRC-90C4 MX28F2000PTC-12C4 MX28F2000PTC-70C4 MX28F2000PTC-90C4 Macronix
Macronix International
Description : 2M-BIT [256K x 8] CMOS FLASH MEMORY View

GENERAL DESCRIPTION
The MX28F2000P is a 2-mega bit FLASH MEMORY or ganized as 256K bytes of 8 bits each. MXIC's FLASH memories offer the most cost-effective and reliable read/write non-volatile random access MEMORY. The MX28F2000P is packaged in 32-pin PDIP, PLCC and TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

FEATURES
• 262,144 bytes by 8-bit organization
• Fast access time: 70/90/120 ns
• Low power consumption
   – 50mA maximum active current
   – 100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
   – Byte Programming (15us typical)
   – Auto chip erase 5 seconds typical (including preprogramming time)
   – Block Erase
• Optimized high density blocked architecture
   – Four 4-KB blocks (Top)
   – Fourteen 16-KB blocks
   – Four 4-KB blocks (Bottom)
• Auto Erase (chip & block) and Auto Program
   – DATA polling
   – Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS FLASH MEMORY technology
• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
• Package type:
   – 32-pin plastic DIP
   – 32-pin PLCC
   – 32-pin TSOP (Type 1)

 

Part Name(s) : MX28F2000P MX28F2000PPC-12C4 MX28F2000PPC-70C4 MX28F2000PPC-90C4 MX28F2000PQC-12C4 MX28F2000PQC-70C4 MX28F2000PQC-90C4 MX28F2000PRC-12C4 MX28F2000PRC-70C4 MX28F2000PRC-90C4 MX28F2000PTC-12C4 MX28F2000PTC-70C4 MX28F2000PTC-90C4 MCNIX
Macronix International
Description : 2M-BIT [256K x 8] CMOS FLASH MEMORY View

GENERAL DESCRIPTION
The MX28F2000P is a 2-mega bit FLASH MEMORY or ganized as 256K bytes of 8 bits each. MXIC's FLASH memories offer the most cost-effective and reliable read/write non-volatile random access MEMORY. The MX28F2000P is packaged in 32-pin PDIP, PLCC and TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

FEATURES
• 262,144 bytes by 8-bit organization
• Fast access time: 70/90/120 ns
• Low power consumption
   – 50mA maximum active current
   – 100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
   – Byte Programming (15us typical)
   – Auto chip erase 5 seconds typical (including preprogramming time)
   – Block Erase
• Optimized high density blocked architecture
   – Four 4-KB blocks (Top)
   – Fourteen 16-KB blocks
   – Four 4-KB blocks (Bottom)
• Auto Erase (chip & block) and Auto Program
   – DATA polling
   – Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS FLASH MEMORY technology
• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
• Package type:
   – 32-pin plastic DIP
   – 32-pin PLCC
   – 32-pin TSOP (Type 1)

 

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