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Description : 4M x 16Bit CMOS Dynamic RAM with Extended Data Out

4M x 16Bit CMOS Dynamic RAM with Extended Data Out

Description : 256K x 16Bit CMOS Dynamic RAM with Extended Data Out

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.

Description : 4M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family.

FEATURES
• Part Identification
    - KM416C4004C(5.0V, 8K Ref.)
    - KM416C4104C(5.0V, 4K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and Outputs
• Early Write or Output enable controlled write
• JEDEC Standard pinOut
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply

Description : 256K X 16 CMOS Dynamic RAM with Extended Data OutPUT

Description :
The GLT44016 is a 262,144 x 16 bit high-performance CMOS Dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT44016 has symmetric address and accepts 512-cycle refresh in 8ms interval.

Features :
* 262,144 words by 16 bits organization.
* Fast access time and cycle time.
* Dual CAS Input.
* Low power dissipation.
* Read-Modify-Write, RAS-Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
* 512 refresh cycles per 8ms.
* Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II)
* Single 5.0V±10% Power Supply.
* All inputs and Outputs are TTL compatible.
* Extended Data-Out(EDO) Page Mode operation.

Description : 256K X 16 CMOS Dynamic RAM with Extended Data OutPUT

Description :
The GLT44016 is a 262,144 x 16 bit high-performance CMOS Dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT44016 has symmetric address and accepts 512-cycle refresh in 8ms interval.

Features :
* 262,144 words by 16 bits organization.
* Fast access time and cycle time.
* Dual CAS Input.
* Low power dissipation.
* Read-Modify-Write, RAS-Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
* 512 refresh cycles per 8ms.
* Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II)
* Single 5.0V±10% Power Supply.
* All inputs and Outputs are TTL compatible.
* Extended Data-Out(EDO) Page Mode operation.

Description : 4M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES
• Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and Outputs
• Early Write or Output enable controlled write
• JEDEC Standard pinOut
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply

Description : 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES
• Part Identification
   - KM416C1004C/C-L (5V, 4K Ref.)
   - KM416C1204C/C-L (5V, 1K Ref.)
   - KM416V1004C/C-L (3.3V, 4K Ref.)
   - KM416V1204C/C-L (3.3V, 1K Ref.)
Extended Data Out Mode operation
   (Fast Page Mode with Extended Data Out)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and Outputs
• Early Write or Output enable controlled write
• JEDEC Standard pinOut
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

Mosel-Vitelic
Mosel Vitelic Corporation
Description : HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS Dynamic RAM

Description
The V53C8258H is a high speed 262,144 x 8 bit CMOS Dynamic random access memory.
The V53C8258H offers a combination of features: Page Mode with Extended Data Output for high Data bandwidth, and Low CMOS standby current.
All inputs and Outputs are TTL compatible. Input and Output capacitances are significantly lowered to allow increased system performance. Page Mode with Extended Data Output operation allows random access of up to 512 (x8) bits within a row with cycle times as fast as 14 ns. Because of static circuitry, the CAS clock is not in the critical timing path. The flow-through column address latches allow address pipelining while relaxing many critical system timing requirements. The V53C8258H is ideally suited for graphics, digital signal processing and high-performance computing systems.

Features
256K x 8-bit organization
■ EDO Page Mode for a sustained Data rate of 71 MHz
■ RAS access time: 35, 40, 45, 50 ns
■ Low power dissipation
■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability
■ Refresh Interval: 512 cycles/8 ms
■ Available in 24 pin 300 mil Plastic DIP, 26/24 pin 300 mil SOJ and 28-pin 300 mil TSOP-I packages
■ Single 5V±10% Power Supply
■ TTL Interface

Part Name(s) : KM4216C256 KM4216V256
Samsung
Samsung
Description : 256K X 16 Bit CMOS Video RAM

256K X 16 Bit CMOS Video RAM

Description : 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES
Extended Data Out Mode operation
   (Fast Page Mode with Extended Data Out)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and Outputs
• Early Write or Output enable controlled write
• JEDEC Standard pinOut
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

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