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Part Name(s) : NMC9346 NMC9346E NMC9346EM8 NMC9346EN NMC9346M8 NMC9346N National-Semiconductor
National ->Texas Instruments
Description : 1024-BIT SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY View

1024-BIT SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY

Part Name(s) : M6M80041P M6M80041FP Mitsubishi
MITSUBISHI ELECTRIC
Description : 4096-BIT (256-WORD BY 16-BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM View

4096-BIT (256-WORD BY 16-BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM

Part Name(s) : NMC9306 NMC9306EM8 NMC9306EN NMC9306M8 NMC9306N National-Semiconductor
National ->Texas Instruments
Description : 256-BIT SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY View

General Description
The NMC9306 is a 256-BIT non-volatile sequential access MEMORY fabricated using advanced floating gate N-Channel E2PROM technology.

Part Name(s) : AM24LC02 AM24LC02IN8 AM24LC02IN8A AM24LC02IS8 AM24LC02IS8A AM24LC02ITS8 AM24LC02ITS8A AM24LC02N8 AM24LC02N8A AM24LC02S8 AM24LC02S8A AM24LC02TS8 AM24LC02TS8A AM24LC02VN8 AM24LC02VN8A AM24LC02VS8 AM24LC02VS8A AM24LC02VTS8 AM24LC02VTS8A Analog-Technology
Analog Technology Inc
Description : 2-Wire SERIAL 2K-bits (256 x 8) CMOS ELECTRICALLY ERASABLE PROM View

2-Wire SERIAL 2K-bits (256 x 8) CMOS ELECTRICALLY ERASABLE PROM


Part Name(s) : HN58X25128FPIE HN58X25128TIE HN58X25256FPIE HN58X25256TIE Renesas
Renesas Electronics
Description : SERIAL Peripheral Interface 128k EEPROM (16-kword 8-bit)/ 256k EEPROM (32-kword 8-bit) ELECTRICALLY ERASABLE and PROGRAMMABLE Read Only MEMORY View

Description
HN58X25xxx Series is the SERIAL Peripheral Interface compatible (SPI) EEPROM (ELECTRICALLY ERASABLE and PROGRAMMABLE ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS MEMORY technology and CMOS process and low voltage circuitry technology. It also has a 64-byte page programming function to make it’s write operation faster.
Note: Renesas Technology’s SERIAL EEPROM are authorized for using consumer applications such as cellular phones, camcorders, audio equipments. Therefore, please contact Renesas Technology’s sales office before using industrial applications such as automotive systems, embedded controllers, and meters.

Features
• Single supply: 1.8 V to 5.5 V
SERIAL Peripheral Interface compatible (SPI bus)
 SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 4 mA (max)
 Active (Write): 4 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
• Endurance: 106 Erase/Write Cycles
• Data retention: 10 Years
• Small size packages: SOP-8pin and TSSOP-14pin
• Shipping tape and reel
 TSSOP-14pin : 2,000 IC/reel
 SOP-8pin : 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free product.

Part Name(s) : NMC9307 NMC9307E NMC9307EM NMC9307EN NMC9307M NMC9307N National-Semiconductor
National ->Texas Instruments
Description : 256-BIT SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY View
Part Name(s) : NMC93C56 NMC93C66 NMC93C56N NMC93C56M NMC93C56EN NMC93C56EM NMC93C56MN NMC93C56MM NMC93C56E NMC93C66N NMC93C66M NMC93C66EN NMC93C66EM NMC93C66MN NMC93C66MM NMC93C66E National-Semiconductor
National ->Texas Instruments
Description : 2048-Bit / 4096-Bit SERIAL ELECTRICALLY ERASABLE Progrmmable Memories View
2048-Bit / 4096-Bit SERIAL ELECTRICALLY ERASABLE Progrmmable Memories
Part Name(s) : HN58X25128I HN58X25256I HN58X25128FPIE HN58X25256FPIE HN58X25128TIE HN58X25256TIE HN58X25128FPI HN58X25128FPI-S0 HN58X25128I HN58X25128TI HN58X25256FPI HN58X25256I HN58X25256TI Renesas
Renesas Electronics
Description : SERIAL Peripheral Interface 128k EEPROM (16-kword 8-bit) 256k EEPROM (32-kword 8-bit) ELECTRICALLY ERASABLE and PROGRAMMABLE Read Only MEMORY View

Description
HN58X25xxx Series is the SERIAL Peripheral Interface compatible (SPI) EEPROM (ELECTRICALLY ERASABLE and PROGRAMMABLE ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS MEMORY technology and CMOS process and low voltage circuitry technology.

Features
• Single supply: 1.8 V to 5.5 V
SERIAL Peripheral Interface compatible (SPI bus)
    - SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
    - Standby: 3 µA (max)
    - Active (Read): 4 mA (max)
    - Active (Write): 4 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
• Endurance: 106 Erase/Write Cycles
• Data retention: 10 Years
• Small size packages: SOP-8pin and TSSOP-14pin
• Shipping tape and reel
    - TSSOP-14pin : 2,000 IC/reel
    - SOP-8pin : 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free product.

Part Name(s) : BR34L02FV-W ROHM
ROHM Semiconductor
Description : 2568 bit ELECTRICALLY ERASABLE PROM (based on SERIAL Presence Detect) View

TheBR34L02FV-W is a2kbit EEPROM MEMORY with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM MEMORY, and a RIMM that uses RAMBUS DRAM MEMORY. This is a MEMORYIC that reads ID in order for the Plug & Play feature to operate.

Features
1) 256k registers ×8 bits SERIAL architecture
2) Single power supply(1.8V to 5.5V)
3) Two wire SERIAL interface
4) Page Write Function (16byte)
5) Write Protect Mode
Write protect 1 (One time Rom)  : 00h to 7Fh
Write protect 2 (Hard wire WP PIN)  : 00h to FFh
6) Low Power consumption
Write (5V)  : 1.2mA(Typ.)
Read (5V)  : 0.2mA(Typ.)
Standby(5V)  : 0.1µA (Typ.)
7)DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
8) Small package - - - - - - SSOP-B8 pin
9) High reliability fine pattern CMOS technology
10) Endurance : 1,000,000 erase/write cycles
11) Dataretention : 40years
12) Filtered inputs in SCL•SDA for noise suppression
13) Initial data FFh in all address

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