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Part Name(s) : M6M80041P M6M80041FP
Mitsubishi
MITSUBISHI ELECTRIC
Description : 4096-BIT (256-WORD BY 16-BIT) Electrically Erasable AND Programmable ROM

4096-BIT (256-WORD BY 16-BIT) Electrically Erasable AND Programmable ROM

Part Name(s) : HN462716 HN462716G
Hitachi
Hitachi -> Renesas Electronics
Description : 2048-word x 8-bit UV Erasable and Electrically Programmable Only Memory

2048-word x 8-bit UV Erasable and Electrically Programmable Only Memory

The HN462716 is a 2048 word by 8 bit Erasable and Electrically Programmable ROMs. This device is packaged in a 24-pin dual-in-line package with transparent lid. The transparent lid allows the usre to expose the chip to ultraviolet light to erase the bit pattern, whereby a new pattern can then be written into the device.

Part Name(s) : BR93L56
ROHM
ROHM Semiconductor
Description : 128 X 16 bIT Electrically Erasable Programmable ROM

128 X 16 bIT Electrically Erasable Programmable ROM

Description : 2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM

2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM

Description : 2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM

[Analog-Technology]

2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM

Description : Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit)/ 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Description
HN58X25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS Memory technology and CMOS process and low voltage circuitry technology. It also has a 64-byte page programming function to make it’s write operation faster.
Note: Renesas Technology’s Serial EEPROM are authorized for using consumer applications such as cellular phones, camcorders, audio equipments. Therefore, please contact Renesas Technology’s sales office before using industrial applications such as automotive systems, embedded controllers, and meters.

Features
• Single supply: 1.8 V to 5.5 V
Serial Peripheral Interface compatible (SPI bus)
 SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 4 mA (max)
 Active (Write): 4 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
• Endurance: 106 Erase/Write Cycles
• Data retention: 10 Years
• Small size packages: SOP-8pin and TSSOP-14pin
• Shipping tape and reel
 TSSOP-14pin : 2,000 IC/reel
 SOP-8pin : 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free product.

Description : Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Description
HN58X25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS Memory technology and CMOS process and low voltage circuitry technology.

Features
• Single supply: 1.8 V to 5.5 V
Serial Peripheral Interface compatible (SPI bus)
    - SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
    - Standby: 3 µA (max)
    - Active (Read): 4 mA (max)
    - Active (Write): 4 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
• Endurance: 106 Erase/Write Cycles
• Data retention: 10 Years
• Small size packages: SOP-8pin and TSSOP-14pin
• Shipping tape and reel
    - TSSOP-14pin : 2,000 IC/reel
    - SOP-8pin : 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free product.

Part Name(s) : BR34L02FV-W
ROHM
ROHM Semiconductor
Description : 256×8 bit Electrically Erasable PROM (based on Serial Presence Detect)

TheBR34L02FV-W is a2kbit EEPROM Memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM Memory, and a RIMM that uses RAMBUS DRAM Memory. This is a MemoryIC that reads ID in order for the Plug & Play feature to operate.

Features
1) 256k registers ×8 bits Serial architecture
2) Single power supply(1.8V to 5.5V)
3) Two wire Serial interface
4) Page Write Function (16byte)
5) Write Protect Mode
Write protect 1 (One time Rom)  : 00h to 7Fh
Write protect 2 (Hard wire WP PIN)  : 00h to FFh
6) Low Power consumption
Write (5V)  : 1.2mA(Typ.)
Read (5V)  : 0.2mA(Typ.)
Standby(5V)  : 0.1µA (Typ.)
7)DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
8) Small package - - - - - - SSOP-B8 pin
9) High reliability fine pattern CMOS technology
10) Endurance : 1,000,000 erase/write cycles
11) Dataretention : 40years
12) Filtered inputs in SCL•SDA for noise suppression
13) Initial data FFh in all address

Description : Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit)/256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Description
HN58X25128/HN58X25256 Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS Memory technology and CMOS process and low voltage circuitry technology. It also has a 64-byte page programming function to make it’s write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
Serial Peripheral Interface compatible (SPI bus)
    ⎯ SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
    ⎯ Standby: 3.0 μA (max)
    ⎯ Active (Read): 4.0 mA (max)
    ⎯ Active (Write): 4.0 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 5 ms (2.5 V or more) / 8 ms (1.8 V or more)
• Endurance: 1,000k or more Cycles @25°C
• Data retention: 100 or more Years @25°C
• Small size packages: SOP-8pin
• Shipping tape and reel
    ⎯ SOP-8pin: 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free product.

Description : CMOS I²C 2-WIRE BUS 1K/2K Electrically Erasable Programmable ROM 128/256 X 8 BIT EEPROM

DESCRIPTION:
The Turbo IC 24C01/24C02 is a Serial 1K/2K EEPROM fabricated with Turbo’s proprietary, high reliability, high performance CMOS technology. It’s 1K/2K of Memory is organized as 128/256 x 8 bits. The Memory is configured as 16/ 32 pages with each page containing 8 bytes. This device offers significant advantages in low power applications.

FEATURES :
• Power Supply Voltage
    Single Vcc for Read and Programming (Vcc = 2.7 V to 5.5 V)
• Low Power (Isb = 2µa @ 5.5 V)
• I²C Bus, 2-Wire Serial Interface
• Support Byte Write and Page Write (8 Bytes)
• Automatic Page write Operation (maximum 10 ms)
    Internal Control Timer
    Internal Data Latches for 8 Bytes
• High Reliability CMOS Technology with EEPROM Cell
    Endurance : 1,000,000 Cycles
    Data Retention : 100 Years

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