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Description : 256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

Description : 256 K (32768 words x 8 bits) SRAM with OE and CE control Pins

256 K (32768 words x 8 bits) SRAM with OE and CE control Pins

SANYO
SANYO -> Panasonic
Description : 256K (32768 words ×8 bits) SRAM control Pins: OE and CE

Overview
The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. control inputs include OE for fast memory access and CE (chip enable) for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well.

Features
• Supply voltage range: 4.5 to 5.5 V
• Access time at 5 V operation:
  LC35256FM, FT-55U: 55 ns (maximum)
  LC35256FM, FT-70U: 70 ns (maximum)
• Standby current: 3.0 µA (Ta ≤70°C)
                         5.0 µA (Ta ≤85°C)
• Operating temperature: –40 to +85°C
• Data retention voltage: 2.0 to 5.5 V
• All I/O levels: TTL compatible
• Input/output shared function Pins, 3-state output Pins
• No clock required
• Package
  28-pin SOP (450 mil) plastic package: LC35256FM
  28-pin TSOP (8 ×13.4 mm) plastic package: LC35256FT

SANYO
SANYO -> Panasonic
Description : 256K (32K words × 8 bits) SRAM control Pins: OE and CE

Overview
The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure.

Features
• Supply voltage range: 2.7 to 3.6 V
• Access time: 100 ns (maximum)
• Standby current: 0.8 µA (Ta ≤ 60°C)
                              4.0 µA (Ta ≤ 70°C)
• Operating temperature: –10 to +70°C
• Data retention voltage: 2.0 to 3.6 V
• All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC)
• Input/output shared function Pins, 3-state output Pins
• No clock required (fully static circuits)
• Package
    28-pin SOP (450 mil) plastic package:
    LC35W256EM-10W
    28-pin TSOP (8 × 13.4 mm) plastic package:
    LC35W256ET-10W

Description : 256 K (32768 words x 8 bits) SRAM

256 K (32768 words x 8 bits) SRAM

Description : 256 K (32768 words x 8 bits) SRAM

256 K (32768 words x 8 bits) SRAM

Description : 256 K (32768 words x 8 bits) SRAM

256 K (32768 words x 8 bit) SRAM

Description : Dual control Pins: OE and CE 256K (32768-word × 8-bit) SRAM

Overview
The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current.

Features
• Supply voltage range: 2.7 to 5.5 V
    — 5-V operation: 5.0 V±10%
    — 3-V operation: 2.7 to 3.6 V
• Access times
    — 5-V operation
        LC35256DM, DT-70: 70 ns (max)
        LC35256D, DM, DT-10: 100 ns (max)
    — 3-V operation
        LC35256DM, DT-70: 200 ns (max)
        LC35256D, DM, DT-10: 500 ns (max)
• Standby current
    — 5-V operation: 1.0 µA (Ta ≤ 60°C),
                                 5.0 µA (Ta ≤ 85°C)
    — 3-V operation: 0.8 µA (Ta ≤ 60°C),
                                4.0 µA (Ta ≤ 85°C)
• Operating temperature range: –40 to +85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All I/O levels
    — 5-V operation: TTL compatible
    — 3-V operation: VCC – 0.2 V/0.2 V
• Shared I/O Pins and 3-state outputs
• No clock signal required.
• Packages
    — 28-pin DIP (600 mil) plastic package: LC35256D
    — 28-pin SOP (450 mil) plastic package: LC35256DM
    — 28-pin TSOP (8 × 13.4 mm) plastic package: LC35256DT

Description : 256 K (32768 words × 8 bits) SRAM

Overview
The LC36256AL, AML are fully asynchronous silicon gate CMOS static RAMs with an 32768 words × 8 bits configuration.
This series have CE chip enable pin for device select/nonselect control and an OE output enable pin for output control, and features high speed as well as low power dissipation.
For these reasons, the series is especially suited for use in systems requiring high speed, low power, and battery backup, and it is easy to expand memory capacity.

Features
• Access time
    70 ns (max.) : LC36256AL-70, LC36256AML-70
    85 ns (max.) : LC36256AL-85, LC36256AML-85
    100 ns (max.) : LC36256AL-10, LC36256AML-10
    120 ns (max.) : LC36256AL-12, LC36256AML-12
• Low current dissipation
    During standby
        2 µA (max.) / Ta = 25°C
        5 µA (max.) / Ta = 0 to +40°C
        25 µA (max.) / Ta = 0 to +70°C
    During data retention
        1 µA (max.) / Ta = 25°C
        2 µA (max.) / Ta = 0 to +40°C
        10 µA (max.) / Ta = 0 to +70°C
    During operation (DC)
        10 mA (max.)
• Single 5 V power supply: 5 V ±10%
• Data retention power supply voltage: 2.0 to 5.5 V
• No clock required (Fully static memory)
• All input/output levels are TTL compatible
• Common input/output Pins, with three output states
• Packages
    DIP 28 -pin (600 mil) plastic package : LC36256AL
    SOP 28-pin (450 mil) plastic package : LC36256AML

Description : 256 K (32768 words × 8 bits) Pseudo-SRAM

Overview
The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use with high density, high speed, and low power dissipation. The LC33832 series can easily accomplish auto-refresh and self-refresh by means of OE/RFSH input. As with asynchronous static RAM, WE input uses a system for incorporating input data at the WE rise, thereby facilitating interfacing with a microcomputer.

Features
32768 words × 8 bits configuration
• Single 5 V ±10% power supply
• All input and output (I/O) TTL compatible
• Fast access times and low power dissipation
• 4 ms refresh using 256 refresh cycle
• CE-only refresh, auto-refresh, and self-refresh
• Low-power version: 100 µA self-refresh current
• Package
   DIP28-pin (600 mil) plastic package: LC33832P, PL
   DIP28-pin (300 mil) plastic package: LC33832S, SL
   SOP28-pin (450 mil) plastic package: LC33832M, ML

 

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