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Part Name(s) : AM29LV200 AM29LV200B
AMD
Advanced Micro Devices
Description : 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

The Am29LV200 is a 2 Mbit, 3.0 Volt-only Flash Memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.

This device is designed to be programmed in system using only a single 3.0 volt VCCsupply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

Part Name(s) : 29LV160M
AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit™ 3.0 Volt-only Boot Sector Flash Memory

General Description
The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC supply. The device can also be programmed in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 V for read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBitTM process technology
   — Fully compatible with Am29LV160D device
■ SecSiTM (Secured Silicon) Sector region
   — 128-word/256-byte Sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword Sectors (word mode)
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for singlepower supply Flash, and superior inadvertent write protection
■ Top or bottom Boot block configurations available
■ Minimum 100,000 erase cycle guarantee per Sector
■ 20-year data retention at 125°C

Performance Characteristics
■ High performance
   — Access times as fast as 70 ns
   — 0.7 s typical Sector erase time
■ Low power consumption (typical values at 5 MHz)
   — 400 nA standby mode current
   — 15 mA read current
   — 40 mA program/erase current
   — 400 nA Automatic Sleep mode current
■ Package options
   — 48-ball Fine-pitch BGA
   — 64-ball Fortified BGA
   — 48-pin TSOP

Part Name(s) : AM29F400B-1
AMD
Advanced Micro Devices
Description : 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1

GENERAL DESCRIPTION
The Am29F400B in Known Good Die (KGD) form is a 4 Mbit, 5.0 Volt-only Flash Memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 Volt-only operation for read, erase, and program operations
   — Minimizes system level requirements
■ Manufactured on 0.35 µm process technology
   — Compatible with 0.5 µm Am29F400 device
■ High performance
   — Acess time as fast as 70 ns
■ Low power consumption (typical values at 5 MHz)
   — 1 µA standby mode current
   — 20 mA read current (byte mode)
   — 28 mA read current (word mode)
   — 30 mA program/erase current
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword Sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a Sector to
      prevent any program or erase operations within
      that Sector
      Sectors can be locked via programming
      equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle per Sector guaranteed
■ Compatibility with JEDEC standards
   — Pinout and software compatible with singlepower-supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data

Part Name(s) : AM29LV256MH123REI
Spansion
Spansion Inc.
Description : 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control

GENERAL DESCRIPTION
The Am29LV256M is a 256 Mbit, 3.0 volt single power supply Flash Memory devices organized as 16,777,216 words or 33,554,432 bytes. The device has a 16-Bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ VersatileI/OTM control
   — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBit process technology
■ SecSiTM (Secured Silicon) Sector region
   — 128-word/256-byte Sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible Sector architecture
   — Five hundred twelve 32 Kword (64 Kbyte) Sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single-power supply Flash, and superior inadvertent write protection
■ Minimum 100,000 erase cycle guarantee per Sector
■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS
■ High performance
   — 100 ns access time
   — 30 ns page read times
   — 0.5 s typical Sector erase time
   — 15 µs typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
   — 4-word/8-byte page read buffer
   — 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 13 mA typical active read current
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 56-pin TSOP
   — 64-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES
■ Software features
   — Program Suspend & Resume: read other Sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other Sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — Unlock Bypass Program command reduces overall multiple-word or byte programming time
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple Flash devices
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a Sector group
   — Temporary Sector Group Unprotect: VID-level method of changing code in locked Sector groups
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last Sector regardless of Sector protection settings
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Description : 16 Megabit (2048K x 8-bit / 1024K x 16-Bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION
The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile Flash Memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.

FEATURES
3.0V, single power supply operation
   - Minimizes system level power requirements
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
   - 9 mA typical active read current
   - 20 mA typical program/erase current
   - Less than 1 μA standby current
• Flexible Sector Architecture:
   - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte Sectors (byte mode)
   - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword Sectors (word mode)
Sector protection :
   - Hardware locking of Sectors to prevent program or erase operations within individual Sectors
   - Additionally, temporary Sector Group Unprotect allows code changes in previously locked Sectors.
• Secured Silicon Sector
   - Provides a 128-words area for code or data that can be permanently protected.
   - Once this Sector is protected, it is prohibited to program or erase within the Sector again.
• High performance program/erase speed
   - Byte/Word program time: 8µs typical
   - Sector erase time: 100ms typical
   - Chip erase time: 4s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA# polling and toggle bits feature
• Single Sector and Chip Erase
Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
• Triple-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• minimum 100K program/erase endurance cycle
• Package Options
   - 48-pin TSOP (Type 1)
   - 48 ball 6mm x 8mm TFBGA
• Industrial Temperature Range

 

Part Name(s) : AM29LV160 AM29LV160B-1
AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION
The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ Manufactured on 0.32 µm process technology
■ High performance
   — Full voltage range: access times as fast as 80 ns
   — Regulated voltage range: access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 9 mA read current
   — 20 mA program/erase current
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword Sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a Sector to prevent
      any program or erase operations within that Sector
      Sectors can be locked in-system or via
      programming equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Unlock Bypass Program Command
   — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per Sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package option
   — 48-ball FBGA
   — 48-pin TSOP
   — 44-pin SO
■ CFI (Common Flash Interface) compliant
   — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
■ Compatibility with JEDEC standards
   — Pinout and software compatible with singlepower supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion (not available on 44-pin SO)
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data

Eon
Eon Silicon Solution Inc.
Description : Base MCP Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-Bit) Pseudo Static RAM

EN71PL032A Base MCP    
Stacked Multi-Chip Product (MCP) Flash Memory and RAM
32 Megabit (2M x 16-Bit) CMOS 3.0 Volt-only Simultaneous
Operation Page Mode Flash Memory and 16 Megabit (1M x 16-Bit) Pseudo Static RAM

General Description
The EN71PL series is a product line of stacked Multi-Chip Product (MCP) packages and consists of:
■EN29PL032A (Simultaneous Read/Write) Flash Memory die.
■ Pseudo SRAM.

Distinctive Characteristics
MCP Features
■ Power supply voltage of 2.7 V to 3.3V
■ High performance
    - 70 ns
■ Package
    - 7 x 9 x 1.2mm 56 ball FBGA
■ Operating Temperature
    - 25°C to +85°C

Description : 8 Megabit (1024K x 8-bit / 512K x 16-Bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION
The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile Flash Memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• Single power supply operation
    - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
    - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
• Manufactured on 0.28 µm process technology
• High performance
    - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
    - 7 mA typical active read current
    - 15 mA typical program/erase current
    - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
    - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte Sectors (byte mode)
    - One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword Sectors (word mode)
    - Supports full chip erase
    - Individual Sector erase supported
    - Sector protection: Hardware locking of Sectors to prevent program or erase operations within individual Sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked Sectors.
• High performance program/erase speed
    - Byte/Word program time: 8µs typical
    - Sector erase time: 500ms typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
• 0.28 µm double-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• 48-pin TSOP (Type 1)
• Commercial Temperature Range

Part Name(s) : AM29LV004B-1
AMD
Advanced Micro Devices
Description : 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION
The Am29LV004B is an 4 Mbit, 3.0 Volt-only Flash Memory organized as 524,288 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
    — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ Manufactured on 0.35 µm process technology
    — Compatible with 0.5 µm Am29LV004 device
■ High performance
    — Full voltage range: access times as fast as 80 ns
    — Regulated voltage range: access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
    — 200 nA Automatic Sleep mode current
    — 200 nA standby mode current
    — 7 mA read current
    — 15 mA program/erase current
■ Flexible Sector architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte Sectors
    — Supports full chip erase
    — Sector Protection features:
        A hardware method of locking a Sector to prevent any program or erase operations within that Sector
        Sectors can be locked in-system or via programming equipment
        Temporary Sector Unprotect feature allows code changes in previously locked Sectors
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
    — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per Sector
■ Package option
    — 40-pin TSOP
■ Compatibility with JEDEC standards
    — Pinout and software compatible with singlepower supply Flash
    — Superior inadvertent write protection
■ Data# Polling and toggle bits
    — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading array data

Part Name(s) : AM29F800
AMD
Advanced Micro Devices
Description : 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1

GENERAL DESCRIPTION
The Am29F800B in Known Good Die (KGD) form is a 8 Mbit, 5.0 Volt-only Flash Memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 Volt-only operation for read, erase, and program operations
   — Minimizes system level requirements
■ Manufactured on 0.35 µm process technology
   — Compatible with 0.5 µm Am29F800 device
■ High performance
   — 90 or 120 ns access time
■ Low power consumption (typical values at 5 MHz)
   — 1 µA standby mode current
   — 20 mA read current (byte mode)
   — 28 mA read current (word mode)
   — 30 mA program/erase current
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword Sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a Sector to
      prevent any program or erase operations within
      that Sector
      Sectors can be locked via programming
      equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycles per Sector guaranteed
■ Compatibility with JEDEC standards
   — Pinout and software compatible with singlepower-supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data

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