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Part Name(s) : K4E641612D K4E641612D-T K4E641612D-TI K4E661612D K4E661612D-T K4E661612D-TI K4E661612D-P K4E641612D-P Samsung
Samsung
Description : 4M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

4M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

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Part Name(s) : KM416C254D KM416C254DL KM416V254D KM416V254DL Samsung
Samsung
Description : 256K x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

This is a family of 262,144 x 16 bit EXTENDED DATA OUT Mode CMOS DRAMs. EXTENDED DATA OUT Mode offers high speed random access of memory cells WITHin the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.

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Part Name(s) : KM416C4004C KM416C4004C-5 KM416C4004C-6 KM416C4104C KM416C4104C-5 KM416C4104C-6 KM416C4004CS KM416C4104CS Samsung
Samsung
Description : 4M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

DESCRIPTION
This is a family of 4,194,304 x 16 bit EXTENDED DATA OUT Mode CMOS DRAMs. EXTENDED DATA OUT Mode offers high speed random access of memory cells WITHin the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family.

FEATURES
• Part Identification
    - KM416C4004C(5.0V, 8K Ref.)
    - KM416C4104C(5.0V, 4K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
EXTENDED DATA OUT Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and OUTputs
• Early Write or OUTput enable controlled write
• JEDEC Standard pinOUT
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply

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Part Name(s) : C1004C C1204C KM416C1004C-45 KM416C1004C-5 KM416C1004C-6 KM416C1004C/C-L KM416C1004CJ KM416C1004CT KM416C1204C-45 KM416C1204C-5 KM416C1204C-6 KM416C1204C/C-L KM416C1204CJ KM416C1204CT KM416V1004C-45 KM416V1004C-5 KM416V1004C-6 KM416V1004C/C-L KM416V1004CJ KM416V1004CT KM416V1204C-45 KM416V1204C-5 KM416V1204C-6 KM416V1204C/C-L KM416V1204CJ Samsung
Samsung
Description : 1M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

DESCRIPTION
This is a family of 1,048,576 x 16 bit EXTENDED DATA OUT CMOS DRAMs. EXTENDED DATA OUT Mode offers high speed random access of memory cells WITHin the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES
• Part Identification
   - KM416C1004C/C-L (5V, 4K Ref.)
   - KM416C1204C/C-L (5V, 1K Ref.)
   - KM416V1004C/C-L (3.3V, 4K Ref.)
   - KM416V1204C/C-L (3.3V, 1K Ref.)
EXTENDED DATA OUT Mode operation
   (Fast Page Mode WITH EXTENDED DATA OUT)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and OUTputs
• Early Write or OUTput enable controlled write
• JEDEC Standard pinOUT
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

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Part Name(s) : K4E641612B K4E641612B-L K4E641612B-T K4E641612B-TC K4E661612B K4E661612B-T K4E661612B-TC K4E661612B-L Samsung
Samsung
Description : 4M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

DESCRIPTION
This is a family of 4,194,304 x 16 bit EXTENDED DATA OUT Mode CMOS DRAMs. EXTENDED DATA OUT Mode offers high speed random access of memory cells WITHin the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES
• Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
EXTENDED DATA OUT Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and OUTputs
• Early Write or OUTput enable controlled write
• JEDEC Standard pinOUT
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply

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Part Name(s) : GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 GLT44016-28TC G-Link
G-Link Technology
Description : 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Description :
The GLT44016 is a 262,144 x 16 bit high-performance CMOS DYNAMIC random access memory. The GLT44016 offers Fast Page mode WITH EXTENDED DATA OUTput, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT44016 has symmetric address and accepts 512-cycle refresh in 8ms interval.

Features :
* 262,144 words by 16 bits organization.
* Fast access time and cycle time.
* Dual CAS Input.
* Low power dissipation.
* Read-Modify-Write, RAS-Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
* 512 refresh cycles per 8ms.
* Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II)
* Single 5.0V±10% Power Supply.
* All inputs and OUTputs are TTL compatible.
* EXTENDED DATA-OUT(EDO) Page Mode operation.

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Part Name(s) : KM416C1004C KM416C1004C-L KM416C1204C KM416C1204C-L KM416V1004C KM416V1004C-L KM416V1204C KM416V1204C-L KM416C1004C-L45 KM416C1004C-L5 KM416C1004C-L6 KM416C1204C-L45 KM416C1204C-L5 KM416C1204C-L6 KM416V1004C-L45 KM416V1004C-L5 KM416V1004C-L6 KM416V1204C-L45 KM416V1204C-L5 KM416V1204C-L6 Samsung
Samsung
Description : 1M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

DESCRIPTION
This is a family of 1,048,576 x 16 bit EXTENDED DATA OUT CMOS DRAMs. EXTENDED DATA OUT Mode offers high speed random access of memory cells WITHin the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES
EXTENDED DATA OUT Mode operation
   (Fast Page Mode WITH EXTENDED DATA OUT)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and OUTputs
• Early Write or OUTput enable controlled write
• JEDEC Standard pinOUT
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

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Part Name(s) : GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 GLT44016-28TC GLT44016-30J4 GLT44016-30TC GLT44016-35J4 GLT44016-35TC GLT44016-40J4 GLT44016-40TC GLT44016-50J4 GLT44016-50TC ETC
Unspecified
Description : 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Description :
The GLT44016 is a 262,144 x 16 bit high-performance CMOS DYNAMIC random access memory. The GLT44016 offers Fast Page mode WITH EXTENDED DATA OUTput, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT44016 has symmetric address and accepts 512-cycle refresh in 8ms interval.

Features :
* 262,144 words by 16 bits organization.
* Fast access time and cycle time.
* Dual CAS Input.
* Low power dissipation.
* Read-Modify-Write, RAS-Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
* 512 refresh cycles per 8ms.
* Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II)
* Single 5.0V±10% Power Supply.
* All inputs and OUTputs are TTL compatible.
* EXTENDED DATA-OUT(EDO) Page Mode operation.

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Part Name(s) : K4E151611D K4E151611D-45J K4E151611D-45JT K4E151611D-50J K4E151611D-50JT K4E151611D-60J K4E151611D-60JT K4E151612D K4E151611 K4E151612D-45J K4E151612D-45JT K4E151612D-50J K4E151612D-50JT K4E151612D-60J K4E151612D-60JT K4E171611D K4E171611D-45J K4E171611D-45JT K4E171611D-50J K4E171611D-50JT K4E171611D-60J K4E171611D-60JT K4E171612D K4E171612D-45J K4E171612D-45JT Samsung
Samsung
Description : 1M x 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

DESCRIPTION
This is a family of 1,048,576 x 16 bit EXTENDED DATA OUT CMOS DRAMs. EXTENDED DATA OUT Mode offers high speed random access of memory cells WITHin the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

FEATURES
• Part Identification
- K4E171611D-J(T) (5V, 4K Ref.)
- K4E151611D-J(T) (5V, 1K Ref.)
- K4E171612D-J(T) (3.3V, 4K Ref.)
- K4E151612D-J(T) (3.3V, 1K Ref.)
EXTENDED DATA OUT Mode operation
(Fast Page Mode WITH EXTENDED DATA OUT)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and OUTputs
• Early Write or OUTput enable controlled write
• JEDEC Standard pinOUT
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

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Part Name(s) : V53C806H V53C806H40 V53C806H45 V53C806H50 V53C806H60 V53C806HK40 V53C806HK45 V53C806HK50 V53C806HK60 MOSEL
Mosel Vitelic, Corp
Description : HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM

Description
The V53C806H is a ultra high speed 1,048,576 x 8 bit CMOS DYNAMIC random access memory. The V53C806H offers a combination of features: Fast Page Mode for high DATA bandwidth, and Low CMOS standby current.
All inputs and OUTputs are TTL compatible. Input and OUTput capacitances are significantly lowered to allow increased system performance.

Features
1M x 8-bit organization
■ Fast Page Mode for a sustained DATA rate of 43 MHz
■ RAS access time: 40, 45, 50, 60 ns
■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability
■ Refresh Interval: 1024 cycle/16 ms
■ Available in 28-pin 400 mil SOJ package
■ Single +5V ±10% Power Supply
■ TTL Interface

 

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