datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : HN58X2408FPI HN58X2408I HN58X2408TI HN58X2416FPI HN58X2416I HN58X2416TI HN58X2432FPI HN58X2432I HN58X2432TI HN58X2464FPI HN58X2464I HN58X2464TI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 8k EEPROM (1-kword 8-bit)/16k EEPROM (2-kword 8-bit) 32k EEPROM (4-kword 8-bit)/64k EEPROM(8-kword 8-bit) View

Description
HN58X24xxI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA(max)
- Active (Read): 1 mA(max)
- Active (Write): 3 mA(max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin and SOP-8pin
• Shipping tape and reel
- TSSOP 8-pin: 3,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: –40 to +85°C

 

Part Name(s) : HN58X2408FPIE HN58X2408I HN58X2408TIE HN58X2416FPIE HN58X2416I HN58X2416TIE HN58X2432FPIE HN58X2432I HN58X2432TIE HN58X2464FPIE HN58X2464I HN58X2464TIE Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 8k EEPROM (1-kword 8-bit)/16k EEPROM (2-kword 8-bit) 32k EEPROM (4-kword 8-bit)/64k EEPROM (8-kword 8-bit) View

Description
HN58X24xxI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA (max)
- Active (Read): 1 mA (max)
- Active (Write): 3 mA (max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin , SOP-8pin
• Shipping tape and reel
- TSSOP 8-pin: 3,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.

 

Part Name(s) : HN58X2402SFPI HN58X2402STI HN58X2404SFPI HN58X2404STI HN58X2402SI HN58X2404SI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 2k EEPROM (256-word 8-bit) 4k EEPROM (512-word 8-bit) View

Description
HN58X24xxSI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 8-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
    - Standby: 3 µA (max)
    - Active (Read): 1 mA (max)
    - Active (Write): 3 mA (max)
• Automatic page write: 8-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP 8-pin and SOP 8-pin
• Shipping tape and reel
    - TSSOP 8-pin: 3,000 IC/reel
    - SOP 8-pin: 2,500 IC/reel

Part Name(s) : NM25C041 NM25C041EM8 NM25C041EN NM25C041LEM8 NM25C041LEN NM25C041LM8 NM25C041LN NM25C041LVM8 NM25C041LVN NM25C041LZEM8 NM25C041LZEN NM25C041LZM8 NM25C041LZN NM25C041LZVM8 NM25C041LZVN NM25C041M8 NM25C041N NM25C041VM8 NM25C041VN NM25C041M8X NM25C041VM8X NM25C041EM8X NM25C041LM8X NM25C041LVM8X NM25C041LEM8X Fairchild
Fairchild Semiconductor
Description : 4K-Bit SERIAL INTERFACE CMOS EEPROM (SERIAL Peripheral INTERFACE (SPI?) Synchronous BUS) View

General Description
The NM25C041 is a 4096-bit MODE 1 SPI (SERIAL Peripheral INTERFACE) CMOS EEPROM which is designed for high-reliability non-volatile data storage applications. The SPI INTERFACE features a byte-wide format (all data is transferred in 8-bit words) to INTERFACE with the Motorola 68HC11 microprocessor, or equivalent, at a 2.1MHz clock transfer rate. (This INTERFACE is considered the fastest SERIAL communication method.) This 4-wire SPI INTERFACE allows the end user full EEPROM functionality while keeping pin count and space requirements low for maximum PC board space utilization.

Features
■ 2.1 MHz clock rate @ 2.7V to 5.5V
■ 4096 bits organized as 512 x 8
■ Multiple chips on the same 3 wire BUS with separate chip select lines
■ Self-timed programming cycle
■ Simultaneous programming of 1 to 4 bytes at a time
■ Status register can be polled during programming to monitor RDY/BUSY
■ Both the Write Protect (WP) pin and auto-write disable after programming provides hardware and software write protection
■ Block write protect feature to protect against accidental writes
■ Endurance: 1,000,000 data changes
■ Data retention greater than 40 years
■ Packages available: 8-pin DIP and 8-pin SO


Part Name(s) : HT93LC86 Holtek
Holtek Semiconductor
Description : CMOS 16K 3-Wire SERIAL EEPROM View

General Description
The HT93LC86 is a 16K-BIT low voltage nonvolatile, SERIAL electrically erasable programmable read only memory device using a CMOS floating gate process. Its 16384 bits of memory are organised into 1024 words of 16 bits each when the ORG pin is connected to VCC or organised into 2048 words of 8 bits each when it is tied to VSS. The device is especially suitable for use in many industrial and commercial applications where low power and low voltage operation are essential. The device can easily INTERFACE to microcontrollers using the versatile SERIAL INTERFACE compose of (CS), SERIAL clock (SK), data input (DI) and data output (DO).

Features
• Operating voltage: 2.2V~5.5V
• Low power consumption
   - Operating: 5mA max.
   - Standby: 10μA max.
• User selectable internal organization
   - 16K: 2048 X 8 or 1024 X 16
• 3-wire SERIAL INTERFACE
• Write cycle time: 5ms max.
• Automatic erase-before-write operation
• Word/chip erase and write operation
• Write operation with built-in timer
• Software controlled write protection
• 40-year data retention
• 106 rewrite cycles per word
• Commercial temperature range (0°C to +70°C)
• 8-pin DIP/SOP/TSSOP package

 

Part Name(s) : HN58X24128FPI HN58X24128I HN58X24128TI HN58X24256FPI HN58X24256I HN58X24256TI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 128k EEPROM (16-kword 8-bit) 256k EEPROM (32-kword 8-bit) View

Description
HN58X24xxx series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA (max)
- Active (Read): 1 mA (max)
- Active (Write): 5 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15 ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: SOP-8pin, TSSOP-14pin
• Shipping tape and reel
- TSSOP 14-pin: 2,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: –40 to +85°C

 

Part Name(s) : HN58X24512FPI HN58X24512I Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 512k EEPROM (64-kword 8-bit) View

Description
HN58X24512I is the two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology.  It also has a 128-
byte page programming function to make it’s write operation faster.

Features
• Single supply:  1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency:  1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)
• Power dissipation:
 Standby:  3 µA (max)
 Active (Read):  2 mA (max)
 Active (Write):  5 mA (max)
• Automatic page write:  128-byte/page
• Write cycle time:  10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)
• Endurance:  105 Cycles (Page write mode)
• Data retention:  10 Years

Part Name(s) : HN58X24512FPIE HN58X24512I Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 512k EEPROM (64-kword 8-bit) View

Description
HN58X24512I is the two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-byte page programming function to make it’ s write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 5.5 V)
• Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 2 mA (max)
 Active (Write): 5 mA (max)
• Automatic page write: 128-byte/page
• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 5.5 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: SOP-8pin (200 mil-wide)
• Shipping tape and reel: 1,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.

Part Name(s) : FM25C160 FM25C160U FM25C160UE FM25C160UEM8 FM25C160UEN FM25C160UL FM25C160ULEM8 FM25C160ULEN FM25C160ULM8 FM25C160ULN FM25C160ULVM8 FM25C160ULVN FM25C160ULZ FM25C160ULZEM8 FM25C160ULZEN FM25C160ULZM8 FM25C160ULZN FM25C160ULZVM8 FM25C160ULZVN FM25C160UM8 FM25C160UN FM25C160UV FM25C160UVM8 FM25C160UVN Fairchild
Fairchild Semiconductor
Description : 16K-BIT SPI? INTERFACE SERIAL CMOS EEPROM View

General Description
The FM25C160U is a 16K bit SERIAL INTERFACE CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data transfer between the SPI microcontroller and the EEPROM. In addition, the SERIAL INTERFACE allows a minimal pin count, packaging designed to simplify PC board layout requirements and offers the designer a variety of low voltage and low power options.

Features
■Sequential read of entire array
■16 byte "Page write" mode to minimize total write time per byte
■/WP pin and BLOCK WRITE protection to prevent inadvert ent programming as well as programming ENABLE and DISABLE opcodes.
■/HOLD pin to suspend data transfer
■Typical 1µA standby current (ISB) for "L" devices and 0.1µA standby current for "LZ" devices.
■Endurance: Up to 1,000,000 data changes
■Data retention greater than 40 years

Functions
■SPI MODE 0 INTERFACE
■16K bits organized as 2048 x 8
■Extended 2.7V to 5.5V operating voltage
■2.1 MHz operation @ 4.5V - 5.5V
■Self-timed programming cycle
■"Programming complete" indicated by STATUS REGISTER polling
■/WP pin and BLOCK WRITE protection

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]