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Part Name(s) : HM6167 HM6167P-8 HM6167P-6 HM6167LP-8 HM6167LP-6 Hitachi
Hitachi -> Renesas Electronics
Description : 16384-WORD x 1-BIT HIGH SPEED CMOS STATIC RAM View

16384-WORD x 1-BIT HIGH SPEED CMOS STATIC RAM

Part Name(s) : MSM5188 MSM5188-45 MSM5188-55 MSM5188-70 OKI
Oki Electric Industry
Description : 16,384-WORD x 4-BIT SPEED STATIC CMOS RAM View

16,384-WORD x 4-BIT SPEED STATIC CMOS RAM

Part Name(s) : CXK5B41020TM CXK5B41020TM-12 CXK5B41020TM- Sony
Sony Semiconductor
Description : 262144-word 4-bit HIGH SPEED Bi-CMOS STATIC RAM View

Description
CXK5B41020TM is a HIGH SPEED 1M bit Bi-CMOS STATIC RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications.

Features
• Single 3.3V power supply: 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 792mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B41020TM 400mil 32pin TSOP package

Function
    262144 word × 4-bit STATIC RAM

Part Name(s) : CXK5816 CXK5816PN CXK5816PN/M-12 CXK5816PN/M-12L CXK5816PN/M-15 CXK5816PN_M-10 CXK5816PN_M-10L CXK5816PN_M-12 CXK5816PN_M-12L CXK5816PN_M-15 CXK5816PN_M-15L Sony
Sony Semiconductor
Description : 2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM View

2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM


Part Name(s) : CXK5V81000ATM CXK5V81000ATM-85LLX CXK5V81000ATM-10LLX Sony
Sony Semiconductor
Description : 131072-word 8-bit HIGH SPEED CMOS STATIC RAM View

Description
The CXK5V81000ATM is a HIGH SPEED CMOS STATIC RAM organized as 131072-words by 8-bits.
A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED.
The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
                      (Access time)
            -85LLX 85ns (Max.)
          -10LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
    8mm × 20mm 32 pin TSOP package

Function
    131072-word x 8-bit STATIC RAM

Part Name(s) : CXK5B81020J CXK5B81020TM CXK5B81020J-12 CXK5B81020TM-12 Sony
Sony Semiconductor
Description : 131072-word 8-bit HIGH SPEED Bi-CMOS STATIC RAM View

Description
CXK5B81020J/TM is a HIGH SPEED 1M bit Bi-CMOS STATIC RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications.

Features
• Single 3.3V power supply: 3.3V ± 0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 864mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B81020J 400mil 32pin SOJ package
    CXK5B81020TM 400mil 32pin TSOP package

Function
    131072 word × 8-bit STATIC RAM

Part Name(s) : CXK5V16100TM CXK5V16100TM-85LLX CXK5V16100TM-10LLX Sony
Sony Semiconductor
Description : 65536-word X 16-bit HIGH SPEED CMOS STATIC RAM View

Description
CXK5V16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for HIGH SPEED and low power consumption applications where battery back up for nonvolatility is required.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time: (Access time)
    -85LLX 85ns (max.)
    -10LLX 100ns (max.)
• Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.)
• Single 3.3V supply: 3.3V±0.3V
• Fully STATIC memory: No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

Function
    65536-word × 16-bit STATIC RAM

Part Name(s) : CXK5V8512TM CXK5V8512TM- CXK5V8512TM-85LLX CXK5V8512TM-10LLX Sony
Sony Semiconductor
Description : 65536-word X 8-bit HIGH SPEED CMOS STATIC RAM View

Description
The CXK5V8512TM is a HIGH SPEED CMOS STATIC RAM organized as 65536-words by 8-bits.
A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED.
The CXK5V8512TM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
                       (Access time)
             -85LLX 85ns (Max.)
           -10LLX 100ns (Max.)
• Low standby current: 14µA (Max.)
• Low data retention current: 12µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
    8mm × 20mm 32 pin TSOP package

Function
    65536-word × 8-bit STATIC RAM

Part Name(s) : CXK5B16120J CXK5B16120J-12 CXK5B16120TM CXK5B16120TM-12 Sony
Sony Semiconductor
Description : 65536-word 16-bit HIGH SPEED Bi-CMOS STATIC RAM View

Description
CXK5B16120J/TM is a HIGH SPEED 1M bit BiCMOS STATIC RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications.

Features
• Single 3.3V Supply 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low stand-by current: 10mA (Max.)
• Low power operation 972mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B16120J 400mil 44pin SOJ Package
    CXK5B16120TM 400mil 44pin TSOP Package

Function
    65536-word × 16-bit STATIC RAM

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