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16384-word x 1-bit High Speed CMOS Static RAM

16384-word x 1-bit High Speed CMOS Static RAM

DESCRIPTION
The ISSI IS61C67 is a High Speed, low power, 16384-word bgy 1-bit CMOS Static RAM. It is fabricated using ISSIs High performance CMOS double metal technology. This Highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

16,384-WORD x 4-BIT Speed Static CMOS RAM

Description
CXK5B41020TM is a High Speed 1M bit Bi-CMOS Static RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in High Speed and low power applications.

Features
• Single 3.3V power supply: 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 792mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B41020TM 400mil 32pin TSOP package

Function
    262144 word × 4-bit Static RAM

Description
CXK5B18120TM is a High Speed 1M bit BiCMOS Static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in High Speed and low power applications.

Features
• Single 3.3V Supply 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low stand-by current: 10mA (Max.)
• Low power operation 1116mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B18120TM 400mil 44pin TSOP Package

Function
    65536-word × 18-bit Static RAM

Description
CXK5V16100TM is a general purpose High Speed CMOS Static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for High Speed and low power consumption applications where battery back up for nonvolatility is required.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time: (Access time)
    -85LLX 85ns (max.)
    -10LLX 100ns (max.)
• Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.)
• Single 3.3V supply: 3.3V±0.3V
• Fully Static memory: No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

Function
    65536-word × 16-bit Static RAM

Description
The CXK5V81000ATM is a High Speed CMOS Static RAM organized as 131072-words by 8-bits.
A polysilicon TFT cell technology realized extremely low stand-by current and Higher data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, High Speed.
The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
                      (Access time)
            -85LLX 85ns (Max.)
          -10LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
    8mm × 20mm 32 pin TSOP package

Function
    131072-word x 8-bit Static RAM

2048 word x 8 Bit High Speed CMOS Static RAM

Description
CXK5B81020J/TM is a High Speed 1M bit Bi-CMOS Static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in High Speed and low power applications.

Features
• Single 3.3V power supply: 3.3V ± 0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 864mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B81020J 400mil 32pin SOJ package
    CXK5B81020TM 400mil 32pin TSOP package

Function
    131072 word × 8-bit Static RAM