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Part Name(s) : HM6167 HM6167P-8 HM6167P-6 HM6167LP-8 HM6167LP-6	Hitachi -> Renesas Electronics
Description : 16384-WORD x 1-BIT HIGH SPEED CMOS STATIC RAM	View
16384-WORD x 1-BIT HIGH SPEED CMOS STATIC RAM

Part Name(s) : MSM5188 MSM5188-45 MSM5188-55 MSM5188-70	Oki Electric Industry
Description : 16,384-WORD x 4-BIT SPEED STATIC CMOS RAM	View
16,384-WORD x 4-BIT SPEED STATIC CMOS RAM

Part Name(s) : CXK5B41020TM CXK5B41020TM-12 CXK5B41020TM-	Sony Semiconductor
Description : 262144-word � 4-bit HIGH SPEED Bi-CMOS STATIC RAM	View
Description CXK5B41020TM is a HIGH SPEED 1M bit Bi-CMOS STATIC RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications. Features • Single 3.3V power supply: 3.3V±0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 792mW (Max.) • Package line-up Dual Vcc/Vss CXK5B41020TM 400mil 32pin TSOP package Function 262144 word × 4-bit STATIC RAM

Part Name(s) : CXK5816 CXK5816PN CXK5816PN/M-12 CXK5816PN/M-12L CXK5816PN/M-15 CXK5816PN_M-10 CXK5816PN_M-10L CXK5816PN_M-12 CXK5816PN_M-12L CXK5816PN_M-15 CXK5816PN_M-15L	Sony Semiconductor
Description : 2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM	View
2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM

Part Name(s) : CXK5V81000ATM CXK5V81000ATM-85LLX CXK5V81000ATM-10LLX	Sony Semiconductor
Description : 131072-word � 8-bit HIGH SPEED CMOS STATIC RAM	View
Description The CXK5V81000ATM is a HIGH SPEED CMOS STATIC RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED. The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) • Low standby current: 28µA (Max.) • Low data retention current: 24µA (Max.) • Single 3.3V supply: 3.3V ± 0.3V • Low voltage data retention: 2.0V (Min.) • Package 8mm × 20mm 32 pin TSOP package Function 131072-word x 8-bit STATIC RAM

Part Name(s) : CXK5B81020J CXK5B81020TM CXK5B81020J-12 CXK5B81020TM-12	Sony Semiconductor
Description : 131072-word � 8-bit HIGH SPEED Bi-CMOS STATIC RAM	View
Description CXK5B81020J/TM is a HIGH SPEED 1M bit Bi-CMOS STATIC RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications. Features • Single 3.3V power supply: 3.3V ± 0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 864mW (Max.) • Package line-up Dual Vcc/Vss CXK5B81020J 400mil 32pin SOJ package CXK5B81020TM 400mil 32pin TSOP package Function 131072 word × 8-bit STATIC RAM

Part Name(s) : CXK5V16100TM CXK5V16100TM-85LLX CXK5V16100TM-10LLX	Sony Semiconductor
Description : 65536-word X 16-bit HIGH SPEED CMOS STATIC RAM	View
Description CXK5V16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for HIGH SPEED and low power consumption applications where battery back up for nonvolatility is required. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (max.) -10LLX 100ns (max.) • Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.) • Single 3.3V supply: 3.3V±0.3V • Fully STATIC memory: No clock or timing strobe required • Equal access and cycle time • Common data input and output: three state output • Directly LVTTL compatible: All inputs and outputs • Low voltage data retention: 2.0V (min.) • 400mil 44pin TSOP (type II) package Function 65536-word × 16-bit STATIC RAM

Part Name(s) : CXK5V8512TM CXK5V8512TM- CXK5V8512TM-85LLX CXK5V8512TM-10LLX	Sony Semiconductor
Description : 65536-word X 8-bit HIGH SPEED CMOS STATIC RAM	View
Description The CXK5V8512TM is a HIGH SPEED CMOS STATIC RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED. The CXK5V8512TM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) • Low standby current: 14µA (Max.) • Low data retention current: 12µA (Max.) • Single 3.3V supply: 3.3V ± 0.3V • Low voltage data retention: 2.0V (Min.) • Package 8mm × 20mm 32 pin TSOP package Function 65536-word × 8-bit STATIC RAM

Part Name(s) : CXK5B16120J CXK5B16120J-12 CXK5B16120TM CXK5B16120TM-12	Sony Semiconductor
Description : 65536-word � 16-bit HIGH SPEED Bi-CMOS STATIC RAM	View
Description CXK5B16120J/TM is a HIGH SPEED 1M bit BiCMOS STATIC RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications. Features • Single 3.3V Supply 3.3V±0.3V • Fast access time 12ns (Max.) • Low stand-by current: 10mA (Max.) • Low power operation 972mW (Max.) • Package line-up Dual Vcc/Vss CXK5B16120J 400mil 44pin SOJ Package CXK5B16120TM 400mil 44pin TSOP Package Function 65536-word × 16-bit STATIC RAM

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