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ST-Microelectronics
STMicroelectronics
Description : MICROWIRE serial access EEPROM

M93C86-x M93C76-x M93C66-x, M93C56-x M93C46-x

: or="FF003B">16-or="FF003B">or="FF003B">Kbit, 8-or="FF003B">or="FF003B">Kbit, 4-or="FF003B">or="FF003B">Kbit, 2-or="FF003B">Kbit or="FF003B">and 1-or="FF003B">Kbit (or="FF003B">8-bit or or="FF003B">16-bit wide) MICROWIRE serial access EEPROM

Description : 128 or="FF003B">Kbit (8 or="FF003B">Kbit x or="FF003B">16) SRAM WITH OUTPUT ENABLE

DESCRIPTION
The M6or="FF003B">16Z08 is a 128 or="FF003B">Kbit (131,072 bit) CMOS SRAM, organized by or="FF003B">16 bits. The device features fully static operation requiring no external clocks or timing strobes, with equal address access or="FF003B">and cycle times. It requires a single 2.6V ± 10% or 3.3V ± 10% supply, or="FF003B">and all inputs or="FF003B">and outputs are TTL compatible.
The M6or="FF003B">16Z08 is available in a 44-lead SOIC package.

FEATURES SUMMARY
■ OPERATION VOLTAGE: 2.34V to 3.6V
■ 8 or="FF003B">Kbit x or="FF003B">16 SRAM
■ EQUAL CYCLE or="FF003B">and access TIMES: AS FAST AS 20ns
■ TRI-STATE COMMON I/O
■ TWO WRITE ENABLE PINS ALLOW WRITING TO UPPER or="FF003B">and LOWER BYTES

Description : or="FF003B">16 or="FF003B">or="FF003B">Kbit, 8 or="FF003B">or="FF003B">Kbit, 4 or="FF003B">or="FF003B">Kbit, 2 or="FF003B">Kbit or="FF003B">and 1 or="FF003B">Kbit (or="FF003B">8-bit or or="FF003B">16-bit wide) MICROWIRE® serial access EEPROM

Description
The M93C86, M93C76, M93C66, M93C56 or="FF003B">and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a serial Data input (D) or="FF003B">and serial Data output (Q) using the MICROWIRE bus protocol

Features
● Industry stor="FF003B">andard MICROWIRE bus
● Single supply voltage:
   – 4.5 V to 5.5 V for M93Cx6
   – 2.5 V to 5.5 V for M93Cx6-W
   – 1.8 V to 5.5 V for M93Cx6-R
● Dual organization: by word (xor="FF003B">16) or byte (x8)
● Programming instructions that work on: byte, word or entire memory
● Self-timed programming cycle with auto erase: 5 ms
● READY/BUSY signal during programming
● 2 MHz clock rate
● Sequential read operation
● Enhanced ESD/latch-up behavior
● More than 1 million write cycles
● More than 40 year data retention
● Packages
   – ECOPACK® (RoHS compliant)

 

Description : or="FF003B">16-or="FF003B">Kbit (2 K × 8) serial (I2C) F-RAM

Functional Description
The FM24Cor="FF003B">16B is a or="FF003B">16-or="FF003B">Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric ror="FF003B">andom access memory or F-RAM is nonvolatile or="FF003B">and performs reads or="FF003B">and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, or="FF003B">and system-level reliability problems caused by EEPROM or="FF003B">and other nonvolatile memories.

Features
or="FF003B">16-or="FF003B">Kbit ferroelectric ror="FF003B">andom access memory (F-RAM) logically organized as 2 K × 8
❐High-endurance 100 trillion (1014) read/writes
❐151-year data retention (See the Data Retention or="FF003B">and Endurancetable)
❐NoDelay™ writes
❐Advanced high-reliability ferroelectric process
■Fast 2-wire serial interface (I2C)
❐Up to 1-MHz frequency
❐Direct hardware replacement for serial (I2C) EEPROM
❐Supports legacy timings for 100 kHz or="FF003B">and 400 kHz
■Low power consumption
❐100 A active current at 100 kHz
❐4 A (typ) stor="FF003B">andby current
■Voltage operation: VDD= 4.5 V to 5.5 V
■Industrial temperature: –40 C to +85 C
■8-pin small outline integrated circuit (SOIC) package
■Restriction of hazardous substances (RoHS) compliant

ST-Microelectronics
STMicroelectronics
Description : or="FF003B">16-or="FF003B">Kbit serial I2C bus EEPROM

The M24Cor="FF003B">16 is a or="FF003B">16-or="FF003B">Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 2 K × 8 bits.

ST-Microelectronics
STMicroelectronics
Description : or="FF003B">16 or="FF003B">Kbit serial I2C EEPROM with Extended Addressing

The ST24/25Eor="FF003B">16 are or="FF003B">16 or="FF003B">Kbit electrically erasable programmable memories (EEPROM), organized as 8 blocks of 256 x8 bits. It is manufactured in STMicroelectronics’s Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles over the full supply voltage range, or="FF003B">and a data retention of over 40 years. The ST25Eor="FF003B">16 operates with a power supply value as low as 2.5V.

Sharp
Sharp Electronics
Description : 4Mbit(512or="FF003B">Kbit x 8, 256 or="FF003B">Kbit x or="FF003B">16) 5V Single Voltage Flash Memory

4Mbit(512or="FF003B">Kbit x 8, 256 or="FF003B">Kbit x or="FF003B">16) 5V Single Voltage Flash Memory

Fairchild
Fairchild Semiconductor
Description : or="FF003B">16-Bit serial-In, serial/Parallel-Out Shift Register

General Description
The 74F673A contains a or="FF003B">16-bit serial-in, serial-out shift register or="FF003B">and a or="FF003B">16-bit Parallel-Out storage register. A single pin serves either as an input for serial entry or as a 3-STATE serial output. In the serial-Out mode, the data recirculates in the shift register.
   
Features
serial-to-parallel converter
or="FF003B">16-bit serial I/O shift register
or="FF003B">16-bit parallel-out storage register
■ Recirculating serial shifting
■ Recirculating parallel transfer
■ Common serial data I/O pin
■ Slim 24 lead package
   

Sharp
Sharp Electronics
Description : 4Mbit(512or="FF003B">Kbit x 8,256 or="FF003B">Kbit x or="FF003B">16) 5V Single Voltage Flash Memory

4Mbit(512or="FF003B">Kbit x 8,256 or="FF003B">Kbit x or="FF003B">16) 5V Single Voltage Flash Memory

Philips
Philips Electronics
Description : or="FF003B">16-bit serial/parallel-in, serial-out shift register (3-State)

DESCRIPTION
The 74F676 contains or="FF003B">16 flip-flops with provision for synchronous parallel or serial entry or="FF003B">and serial output. When the mode (M) input is High, information present on the parallel data (D0–D15) inputs is entered on the falling edge of the clock pulse (CP) input signal. When M is Low, data is shifted out of the most significant bit position while information present on the serial (SI) input shifts into the least significant bit position. A High signal on the chip select (CS) input prevents both parallel or="FF003B">and serial operations.

FEATURES
or="FF003B">16-bit parallel-to-serial conversion
or="FF003B">16-bit serial-in, serial-out
• Chip select control
• Power supply current 48mA typical
• Shift frequency 110MHz tyical
• Available in 300mil-wide 24-pin Slim DIP package

 

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