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Part Name(s) : 93C46 93C56 93C66 93C76 93C86 ST-Microelectronics
STMicroelectronics
Description : MICROWIRE SERIAL ACCESS EEPROM

M93C86-x M93C76-x M93C66-x, M93C56-x M93C46-x

: OR="FF003B">16-OR="FF003B">KBIT, 8-OR="FF003B">KBIT, 4-OR="FF003B">KBIT, 2-OR="FF003B">KBIT OR="FF003B">AND 1-OR="FF003B">KBIT (OR="FF003B">8-BIT OR OR="FF003B">16-bit WIDE) MICROWIRE SERIAL ACCESS EEPROM

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Part Name(s) : M9036-BN3 M9036-BN3T M9036-BN6 M9036-BN6T M9036-DW3 M9036-DW3T M9036-DW6 M9036-DW6T M9036-MB3 M9036-MB3T M9036-MB6 M9036-MB6T M9036-MN3 M9036-MN3T M9036-MN6 M9036-MN6T M9036-RBN3 M9036-RBN3T M9036-RBN6 M9036-RBN6T M9036-RDW3 M9036-RDW3T M9036-RDW6 M9036-RDW6T M9036-RMB3 ST-Microelectronics
STMicroelectronics
Description : OR="FF003B">16 OR="FF003B">KBIT, 8 OR="FF003B">KBIT, 4 OR="FF003B">KBIT, 2 OR="FF003B">KBIT OR="FF003B">AND 1 OR="FF003B">KBIT (OR="FF003B">8-BIT OR OR="FF003B">16-bit WIDE) MICROWIRE® SERIAL ACCESS EEPROM

Description
The M93C86, M93C76, M93C66, M93C56 OR="FF003B">AND M93C46 are electrically erasable programmable memORy (EEPROM) devices. They are ACCESSed through a SERIAL Data input (D) OR="FF003B">AND SERIAL Data output (Q) using the MICROWIRE bus protocol

Features
● Industry stOR="FF003B">ANDard MICROWIRE bus
● Single supply voltage:
   – 4.5 V to 5.5 V fOR M93Cx6
   – 2.5 V to 5.5 V fOR M93Cx6-W
   – 1.8 V to 5.5 V fOR M93Cx6-R
● Dual ORganization: by wORd (xOR="FF003B">16) OR byte (x8)
● Programming instructions that wORk on: byte, wORd OR entire memORy
● Self-timed programming cycle with auto erase: 5 ms
● READY/BUSY signal during programming
● 2 MHz clock rate
● Sequential read operation
● Enhanced ESD/latch-up behaviOR
● MORe than 1 million write cycles
● MORe than 40 year data retention
● Packages
   – ECOPACK® (RoHS compliant)

 

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Part Name(s) : ST93C06 ST93C06B1 ST93C06B1013TR ST93C06B3 ST93C06B3013TR ST93C06B6 ST93C06B6013TR ST93C06C ST93C06CB1 ST93C06CB1013TR ST93C06CB3 ST93C06CB3013TR ST93C06CB6 ST93C06CB6013TR ST93C06CM1 ST93C06CM1013TR ST93C06CM3 ST93C06CM3013TR ST93C06CM6 ST93C06CM6013TR ST93C06M1 ST93C06M1013TR ST93C06M3 ST93C06M3013TR ST93C06M6 ST-Microelectronics
STMicroelectronics
Description : 256 bit (OR="FF003B">16 x OR="FF003B">16 OR 32 x 8) SERIAL MICROWIRE EEPROM

DESCRIPTION
The ST93C06 OR="FF003B">AND ST93C06C are 256 bit Electrically Erasable Programmable MemORy (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.In the text the two products are referred to as ST93C06. The memORy is divided into either 32 x 8 bit bytes OR OR="FF003B">16 x OR="FF003B">16 bit wORds. The ORganization may be selected by a signal applied on the ORG input.

1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION
DUAL ORGANIZATION: OR="FF003B">16 x OR="FF003B">16 OR 32 x 8
BYTE/WORD OR="FF003B">AND ENTIRE MEMORY PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
READY/BUSY SIGNAL DURING PROGRAMMING
SINGLE 5V ±10% SUPPLY VOLTAGE
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP PERFORMANCES fOR ”C” VERSION
ST93C06 OR="FF003B">AND ST93C06C are replaced by the M93C06

 

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Part Name(s) : ST93C06 ST93C06B1 ST93C06B1013TR ST93C06B3 ST93C06B3013TR ST93C06B6 ST93C06B6013TR ST93C06C ST93C06CB1 ST93C06CB1013TR ST93C06CB3 ST93C06CB3013TR ST93C06CB6 ST93C06CB6013TR ST93C06CM1 ST93C06CM1013TR ST93C06CM3 ST93C06CM3013TR ST93C06CM6 ST93C06CM6013TR ST93C06M1 ST93C06M1013TR ST93C06M3 ST93C06M3013TR ST93C06M6 STMICROELECTRONICS
STMicroelectronics
Description : 256 bit (OR="FF003B">16 x OR="FF003B">16 OR 32 x 8) SERIAL MICROWIRE EEPROM

DESCRIPTION
The ST93C06 OR="FF003B">AND ST93C06C are 256 bit Electrically Erasable Programmable MemORy (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.In the text the two products are referred to as ST93C06. The memORy is divided into either 32 x 8 bit bytes OR OR="FF003B">16 x OR="FF003B">16 bit wORds. The ORganization may be selected by a signal applied on the ORG input.

1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION
DUAL ORGANIZATION: OR="FF003B">16 x OR="FF003B">16 OR 32 x 8
BYTE/WORD OR="FF003B">AND ENTIRE MEMORY PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
READY/BUSY SIGNAL DURING PROGRAMMING
SINGLE 5V ±10% SUPPLY VOLTAGE
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP PERFORMANCES fOR ”C” VERSION
ST93C06 OR="FF003B">AND ST93C06C are replaced by the M93C06

 

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Part Name(s) : ST93C66 ST93C66B1TR ST93C66B3TR ST93C66B6TR ST93C66CM1TR ST93C66CM3TR ST93C66CM6TR ST93C67 ST93C67B1TR ST93C67B3TR ST93C67B6TR ST93C67CM1TR ST93C67CM3TR ST93C67CM6TR ST-Microelectronics
STMicroelectronics
Description : 4K (256 X OR="FF003B">16 OR 512 X 8) SERIAL MICROWIRE EEPROM

DESCRIPTION
This specification covers a range of 4K bit SERIAL EEPROM products, the ST93C66 specified at 5V ± 10% OR="FF003B">AND the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66.
The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemORy(EEPROM) fabricatedwith SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memORy is ACCESSed through a SERIAL input (D) OR="FF003B">AND output (Q). The 4K bit memORy is divided into either 512 x 8 bit bytes OR 256 x OR="FF003B">16 bit wORds. The ORganization may be selected by a signal applied on the ORG input.

■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION
■ DUAL ORGANIZATION: 256 x OR="FF003B">16 OR 512 x 8
■ BYTE/WORD OR="FF003B">AND ENTIRE MEMORY PROGRAMMING INSTRUCTIONS
■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
■ READY/BUSY SIGNAL DURING PROGRAMMING
■ SINGLE SUPPLY VOLTAGE:
   – 4.5V to 5.5V fOR ST93C66 version
   – 3V to 5.5V fOR ST93C67 version
■ SEQUENTIAL READ OPERATION
■ 5ms TYPICAL PROGRAMMING TIME
■ ST93C66 OR="FF003B">AND ST93C67 are replaced by the M93C66

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Part Name(s) : 74F673A 74F673APC 74F673ASC 74F673ASCX 74F673ASPC Fairchild
Fairchild Semiconductor
Description : OR="FF003B">16-Bit SERIAL-In, SERIAL/Parallel-Out Shift Register

General Description
The 74F673A contains a OR="FF003B">16-bit SERIAL-in, SERIAL-out shift register OR="FF003B">AND a OR="FF003B">16-bit Parallel-Out stORage register. A single pin serves either as an input fOR SERIAL entry OR as a 3-STATE SERIAL output. In the SERIAL-Out mode, the data recirculates in the shift register.
   
Features
SERIAL-to-parallel converter
OR="FF003B">16-bit SERIAL I/O shift register
OR="FF003B">16-bit parallel-out stORage register
■ Recirculating SERIAL shifting
■ Recirculating parallel transfer
■ Common SERIAL data I/O pin
■ Slim 24 lead package
   

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Part Name(s) : M24COR="FF003B">16-F M24COR="FF003B">16-FTW20I/90 ST-Microelectronics
STMicroelectronics
Description : OR="FF003B">16-OR="FF003B">KBIT SERIAL I2C bus EEPROM

The M24COR="FF003B">16 is a OR="FF003B">16-OR="FF003B">KBIT I2C-compatible EEPROM (Electrically Erasable PROgrammable MemORy) ORganized as 2 K × 8 bits.

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Part Name(s) : Q67100-H3509 Q67100-H3510 Q67100-H3511 Q67100-H3514 Q67100-H3515 Q67100-H35OR="FF003B">16 Q67100-H3519 Q67100-H3520 Q67100-H3521 Q67100-H3522 Q67100-H3523 Q67100-H3524 SLA24C08-D-3/P SLA24C08-D/P SLA24C08-S-3/P SLA24C08-S/P SLA24COR="FF003B">16-D-3/P SLA24COR="FF003B">16-D/P SLA24COR="FF003B">16-S-3/P SLA24COR="FF003B">16-S/P SLE24C08-D/P SLE24C08-S/P SLE24COR="FF003B">16-D/P SLE24COR="FF003B">16-S/P SLX24C08/OR="FF003B">16/P Infineon
Infineon Technologies
Description : 8/OR="FF003B">16 OR="FF003B">KBIT (1024/2048 × 8 bit) SERIAL CMOS-EEPROM with I2C Synchronous 2-Wire Bus OR="FF003B">AND Page Protection Mode™

Features
• Data EEPROM internally ORganized as 1024/2048 bytes OR="FF003B">AND 64/128 pages × OR="FF003B">16 bytes
• Page protection mode, flexible page-by-page hardware write protection
    – Additional protection EEPROM of 64/128 bits, 1 bit per data page
    – Protection setting fOR each data page by writing its protection bit
    – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire SERIAL interface bus, I2C-Bus compatible
• Filtered inputs fOR noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
    – Internal programming voltage
    – Self timed programming cycle including erase
    – Byte-write OR="FF003B">AND page-write programming, between 1 OR="FF003B">AND OR="FF003B">16 bytes
    – Typical programming time 5 ms fOR up to OR="FF003B">16 bytes
• High reliability
    – Endurance 106 cycles1)
    – Data retention 40 years1)
    – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available fOR extended temperature ranges
    – Industrial: − 40 °C to + 85 °C
    – Automotive: − 40°C to + 125 °C

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Part Name(s) : SLA24C08-D-3/P SLA24C08-D/P SLA24C08-S-3/P SLA24C08-S/P SLA24COR="FF003B">16-D-3/P SLA24COR="FF003B">16-D/P SLA24COR="FF003B">16-S-3/P SLA24COR="FF003B">16-S/P SLE24C08-D/P SLE24C08-S/P SLE24COR="FF003B">16-D/P SLE24COR="FF003B">16-S/P SLX24C08/OR="FF003B">16/P Q67100-H3524 Q67100-H3521 Q67100-H3523 Q67100-H3520 Q67100-H3522 Q67100-H3519 Q67100-H35OR="FF003B">16 Q67100-H3511 Q67100-H3510 Q67100-H3515 Q67100-H3514 Q67100-H3509 Siemens
Siemens AG
Description : 8/OR="FF003B">16 OR="FF003B">KBIT (1024/2048 × 8 bit) SERIAL CMOS-EEPROM with I2C Synchronous 2-Wire Bus OR="FF003B">AND Page Protection Mode™

Features
• Data EEPROM internally ORganized as 1024/2048 bytes OR="FF003B">AND 64/128 pages × OR="FF003B">16 bytes
• Page protection mode, flexible page-by-page hardware write protection
    – Additional protection EEPROM of 64/128 bits, 1 bit per data page
    – Protection setting fOR each data page by writing its protection bit
    – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire SERIAL interface bus, I2C-Bus compatible
• Filtered inputs fOR noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
    – Internal programming voltage
    – Self timed programming cycle including erase
    – Byte-write OR="FF003B">AND page-write programming, between 1 OR="FF003B">AND OR="FF003B">16 bytes
    – Typical programming time 5 ms fOR up to OR="FF003B">16 bytes
• High reliability
    – Endurance 106 cycles1)
    – Data retention 40 years1)
    – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available fOR extended temperature ranges
    – Industrial: − 40 °C to + 85 °C
    – Automotive: − 40°C to + 125 °C

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Part Name(s) : 74F675A 74F675APC 74F675ASC 74F675ASPC Fairchild
Fairchild Semiconductor
Description : OR="FF003B">16-Bit SERIAL-In, SERIAL/Parallel-Out Shift Register

General Description
The 74F675A contains a OR="FF003B">16-bit SERIAL in/SERIAL out shift register OR="FF003B">AND a OR="FF003B">16-bit parallel out stORage register. Separate SERIAL input OR="FF003B">AND output pins are provided fOR expansion to longer wORds. By means of a separate clock, the contents of the shift register are transferred to the stORage register.
The contents of the stORage register can also be loaded back into the shift register. A HIGH signal on the Chip Select input prevents both shifting OR="FF003B">AND parallel loading.

Features
SERIAL-to-parallel converter
OR="FF003B">16-Bit SERIAL I/O shift register
OR="FF003B">16-Bit parallel out stORage register
■Recirculating parallel transfer
■ExpOR="FF003B">ANDable fOR longer wORds
■Slim 24 lead package

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