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Part Name(s) : NTE325 NTE-Electronic
NTE Electronics
Description : SILICON NPN RF Power TRANSISTOR 50W @ 30MHz View

Description:
The NTE325 is a SILICON NPN RF power TRANSISTOR in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.

Features:
● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50%

Part Name(s) : STK4192 STK4192II SANYO
SANYO -> Panasonic
Description : AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.4%) View

AF Power Amplifier (Split Power Supply)
(50W + 50W min, THD = 0.4%)

Features
• The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy design.
• Small-sized package whose pin assignment is the same as that of the STK4101II series
• Built-in muting circuit to cut off various kinds of pop noise
• Greatly reduced heat sink due to substrate temperature 125°C guaranteed
• Excellent cost performance

 

Part Name(s) : BU500 Motorola
Motorola => Freescale
Description : NPN SILICON POWER METAL TRANSISTOR View

6 AMPERES NPN SILICON POWER METAL TRANSISTOR 1500 VOLTS 75 WATTS

HORIZONTAL DEFLECTION TRANSISTOR

Part Name(s) : BULD25D BULD25DR BULD25SL Transys
Transys Electronics
Description : NPN SILICON TRANSISTOR WITH INTEGRATED DIODE View

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE


Part Name(s) : SFT1618 ETC
Unspecified
Description : 10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS View

[SSDI]

10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS

FEATURES
► BVCEO 800 VOLTS MINIMUM
► HIGH GAIN FROM 1mA TO 10A
► VERY LOW LEAKAGE
► FAST SWITCHING, 500ns ON-TIME
► GOLD EUTECTIC DIE ATTACH
► LOW THERMAL RESISTANCE

Part Name(s) : SFT1618 SSDI
Solid State Devices, Inc.
Description : 10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS View

10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS

FEATURES
► BVCEO 800 VOLTS MINIMUM
► HIGH GAIN FROM 1mA TO 10A
► VERY LOW LEAKAGE
► FAST SWITCHING, 500ns ON-TIME
► GOLD EUTECTIC DIE ATTACH
► LOW THERMAL RESISTANCE

Part Name(s) : STP12NK80Z STB12NK80Z STW12NK80Z NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH? Power MOSFET View

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE

Part Name(s) : 2SC2873 C2873 SKTECHNOLGY
SHIKE Electronics
Description : NPN SILICON Epitaxial Planar TRANSISTOR View

NPN SILICON Epitaxial Planar TRANSISTOR

500mW, 1.5A, 32V

Part Name(s) : NTE7103 NTE-Electronic
NTE Electronics
Description : Integrated Circuit 50W to 80W Power Amplifier, Driver View

Description:
The NTE7103 is an integrated monolithic circuit in a 14–Lead SIP type package designed for use in 50W to 80W class HiFi audio power amplifier applications. This device consists of an input differential amplifier, a predriver circuit, a driver circuit, and an over current protection circuit.

Features:
• Low Distortion
   0.002% Typ. (VCC = ±46V, f = 1kHz, Av = 30dB, PO = 50W, RL = 8Ω w/Power TRANSISTOR)
   0.006% Typ. (VCC = ±46V, f = 20kHz, Av = 30dB, PO = 50W, RL = 8Ω w/Power TRANSISTOR)
• Wide Frequency Band
• Wide Power Band

 

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