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Part Name(s) : NTE325
NTE-Electronic
NTE Electronics
Description : Silicon NPN RF Power Transistor 50W @ 30MHz

Description:
The NTE325 is a Silicon NPN RF power Transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.

Features:
● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50%

Part Name(s) : STK4192 STK4192II
SANYO
SANYO -> Panasonic
Description : AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.4%)

AF Power Amplifier (Split Power Supply)
(50W + 50W min, THD = 0.4%)

Features
• The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy design.
• Small-sized package whose pin assignment is the same as that of the STK4101II series
• Built-in muting circuit to cut off various kinds of pop noise
• Greatly reduced heat sink due to substrate temperature 125°C guaranteed
• Excellent cost performance

 

Description : Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers

• Nominal current                          2.3 / 1.5 A
• Alternating input voltage            40…500 V
• Plastic case                     19 x 5 x 10 [mm]
• Weight approx.                                   1.8 g
• Standard packaging: bulk

Part Name(s) : STK433-760-E
SANYO
SANYO -> Panasonic
Description : 2-channel class AB audio power IC, 50W+50W

Overview
The STK433-760-E is a hybrid IC designed to be used in 50W ×50W (2-channel) class AB audio power amplifiers.

Features
•Miniature package (47.0mm ×25.6mm ×9.0mm)
•Output load impedance: RL= 6Ω to 4Ω supported
•Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection circuit constituted by monolithic ICs

Applications
•Audio power amplifiers.
 

Part Name(s) : BU500
Motorola
Motorola => Freescale
Description : NPN Silicon POWER METAL Transistor

6 AMPERES NPN Silicon POWER METAL Transistor 1500 VOLTS 75 WATTS

HORIZONTAL DEFLECTION Transistor

Transys
Transys Electronics
Description : NPN Silicon Transistor WITH INTEGRATED Diode

NPN Silicon Transistor WITH INTEGRATED Diode

Part Name(s) : MMBT8550-1.5A
DGNJDZ
Nanjing International Group Co
Description : PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.

As complementary type the NPN Transistor
MMBT8050 (1.5A) is recommended.

Part Name(s) : SFT1618
SSDI
Solid State Devices, Inc.
Description : 10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

FEATURES
► BVCEO 800 VOLTS MINIMUM
► HIGH GAIN FROM 1mA TO 10A
► VERY LOW LEAKAGE
► FAST SWITCHING, 500ns ON-TIME
► GOLD EUTECTIC DIE ATTACH
► LOW THERMAL RESISTANCE

Part Name(s) : SFT1618
ETC
Unspecified
Description : 10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

[SSDI]

10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

FEATURES
► BVCEO 800 VOLTS MINIMUM
► HIGH GAIN FROM 1mA TO 10A
► VERY LOW LEAKAGE
► FAST SWITCHING, 500ns ON-TIME
► GOLD EUTECTIC DIE ATTACH
► LOW THERMAL RESISTANCE

NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE

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