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Part Name(s) : 2SC3883 C3883
Hitachi -> Renesas Electronics
Hitachi -> Renesas Electronics
Description : 1500/800V, 5A, 50W / Transistor NPN Silicon + Diode

Hitachi NPN 2SC3883, C3883.

Replace Part : BU706D, 2SC3481, 2SC3681, 2SC4291, BU508D, KT8107B

Part Name(s) : MRF450 MRF450A
New Jersey Semiconductor
New Jersey Semiconductor
Description : NPN Silicon RF POWER TRANSISOTRS

NPN Silicon RF POWER TRANSISOTRS

50W - 3MHz RF POWER Transistor NPN Silicon

Part Name(s) : MRF450 MRF450A
Motorola => Freescale
Motorola => Freescale
Description : NPN Silicon RF POWER TRANSISOTRS

NPN Silicon RF POWER TRANSISOTRS

50W - 3MHz RF POWER Transistor NPN Silicon

Part Name(s) : BUPD1520
Power Innovations Ltd
Power Innovations Ltd
Description : NPN Silicon Transistor WITH INTEGRATED Diode

NPN Silicon Transistor WITH INTEGRATED Diode

● Designed for Self Oscillating Inverter Applications
● Rugged 1500 V Planar Construction
● Integral Free-Wheeling Anti-Parallel Diode

Part Name(s) : 2SD718 D718
First Silicon Co., Ltd
First Silicon Co., Ltd
Description : NPN EPITAXIAL Silicon Transistor

NPN EPITAXIAL Silicon Transistor
HIGH POWER AMPLIFIER APPLICATION

FEATURES
* Recommended for 45~50W Audio Frequency
   Amplifier Output Stage.
* Complementary to 2SB688.

Part Name(s) : BU500
Motorola => Freescale
Motorola => Freescale
Description : NPN Silicon POWER METAL Transistor

6 AMPERES NPN Silicon POWER METAL Transistor 1500 VOLTS 75 WATTS



HORIZONTAL DEFLECTION Transistor


Description : HIGH VOLTAGE AND HIGH RELIABILITY

NPN Silicon Transistor

HIGH VOLTAGE AND HIGH RELIABILITY



FEATURES

* High Voltage (VCEO= 800V)

* High Speed Switching

* Wide SOA


Part Name(s) : 2SC4838 C4838
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER Transistor)

DESCRIPTION
2SC4838 is a Silicon NPN epitaxial planar type Transistor specifically designed for RF power amplifiers in 1.65GHz.

APPLICATION
   For pre-amplifier stage of  50W, 1.65GHz, 28V.

Part Name(s) : 2SC3102 C3102
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE(RF POWER Transistor)

DESCRIPTION
2SC3102 is a Silicon NPN epitaxial planar type Transistor specifically designed for high power amplifiers applications in UHF band.

APPLICATIONS
   For output stage of 50W power amplifiers in UHF band.

Part Name(s) : 2SC4989 C4989
Mitsumi
Mitsumi
Description : RF POWER Transistor NPN EPITAXIAL PLANAR TYPE

DESCRIPTION
2SC4989 is a Silicon NPN epitaxial planar type Transistor specifically designed for high power amplifiers in UHF band.

APPLICATION
    For output stage of 50W power amplifiers in UHF band.

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