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Part Name(s) : M5M51008KR-55H Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using HIGH-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device(SMD). Two types of devices are available.
M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
   M5M51008DFP  ············ 32pin  525mil  SOP
   M5M51008DVP,RV ············ 32pin  8 X 20 mm2  TSOP
   M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION
Small capacity memory units

Part Name(s) : M5M51008KV-55H M5M51008RV M5M51008VP Renesas
Renesas Electronics
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using HIGH-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device(SMD). Two types of devices are available. M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
    M5M51008DFP  ············ 32pin  525mil  SOP
    M5M51008DVP,RV············ 32pin  8 X 20 mm2 TSOP
    M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION
Small capacity memory units

Part Name(s) : HM6167 HM6167P-8 HM6167P-6 HM6167LP-8 HM6167LP-6 Hitachi
Hitachi -> Renesas Electronics
Description : 16384-word x 1-bit HIGH SPEED CMOS STATIC RAM View

16384-word x 1-bit HIGH SPEED CMOS STATIC RAM

Part Name(s) : MSM5188 MSM5188-45 MSM5188-55 MSM5188-70 OKI
Oki Electric Industry
Description : 16,384-WORD x 4-BIT SPEED STATIC CMOS RAM View

16,384-WORD x 4-BIT SPEED STATIC CMOS RAM


Part Name(s) : CXK5V16100TM CXK5V16100TM-85LLX CXK5V16100TM-10LLX Sony
Sony Semiconductor
Description : 65536-word X 16-bit HIGH SPEED CMOS STATIC RAM View

Description
CXK5V16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for HIGH SPEED and low power consumption applications where battery back up for nonvolatility is required.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time: (Access time)
    -85LLX 85ns (max.)
    -10LLX 100ns (max.)
• Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.)
• Single 3.3V supply: 3.3V±0.3V
• Fully STATIC memory: No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

Function
    65536-word × 16-bit STATIC RAM

Part Name(s) : M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M51008DKR M5M51008DKR-55H M5M51008DKR-70H M5M51008DKV M5M51008DKV-55H M5M51008DKV-70H M5M51008DRV M5M51008DRV-55H M5M51008DRV-70H M5M51008DVP M5M51008DVP-55H M5M51008DVP-70H Renesas
Renesas Electronics
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using HIGH-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a HIGH density and low power STATIC RAM.

FEATURES
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51008DFP ············ 32pin 525mil SOP
    M5M51008DVP,RV ············ 32pin 8 X 20 mm2 TSOP
    M5M51008DKV ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION
    Small capacity memory units

Part Name(s) : M5M51008DFP M5M51008DKR M5M51008DKV M5M51008DRV M5M51008DVP M5M51008DFP-55H M5M51008DFP-70H M5M51008DVP-55H M5M51008DVP-70H M5M51008DRV-55H M5M51008DRV-70H M5M51008DKV-55H M5M51008DKV-70H M5M51008DKR-55H M5M51008DKR-70H Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using HIGH-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a HIGH density and low power STATIC RAM.

FEATURES
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51008DFP ············ 32pin 525mil SOP
    M5M51008DVP,RV ············ 32pin 8 X 20 mm2 TSOP
    M5M51008DKV ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION
    Small capacity memory units

Part Name(s) : M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M27C202K-15I Mitsubishi
MITSUBISHI ELECTRIC
Description : 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM View

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

Part Name(s) : TC5564 TC5564AFL-15 TC5564AFL-20 TC5564APL-15 TC5564APL-20 Toshiba
Toshiba
Description : 8192 WORD X 8 BIT CMOS STATIC RAM View

8192 WORD X 8 BIT CMOS STATIC RAM

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