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Part Name(s) : NMC6518 NMC6518J NMC6518J-2 NMC6518J-9 NMC6518J-5 NMC6518N NMC6518N-5 National-Semiconductor
National ->Texas Instruments
Description : 1024-BIT (1024 x 1) STATIC RAM View

General Description
The NMC6518 is a STATIC CMOS random access read/write memory organized as 1024 words of 1 bit each.

Part Name(s) : NMC6551 NMC6551-2 NMC6551-5 NMC6551-9 NMC6551B-2 NMC6551B-9 NMC6551J NMC6551J-2 NMC6551J-5 NMC6551J-9 NMC6551N NMC6551N-5 National-Semiconductor
National ->Texas Instruments
Description : 1024-BIT (256 x 4) STATIC RAM View

1024-BIT (256 x 4) STATIC RAM

Part Name(s) : AM2533 AM2533V AM2533DC AM2833PC AM2833DC AM2833DM AM2833 AMD
Advanced Micro Devices
Description : 1024-BIT STATIC Shift Registers View

1024-BIT STATIC Shift Registers

Part Name(s) : MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3 Intersil
Intersil
Description : 1024-Word x 4-Bit LSI STATIC RAM View

Description
The MWS5114 is a 1024 word by 4-bit STATIC random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceRAMic packages (D suffix) and in 18 lead dual in-line plastic packages (E suffix).

Features
• Fully STATIC Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low as 2V Min
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power

 


Part Name(s) : CXK1012P CXK1012 Sony
Sony Semiconductor
Description : 1024-BIT (128word x 8 bit) Non-Volatile Memory View

1024-BIT (128word x 8 bit) Non-Volatile Memory

Part Name(s) : NMC9346 NMC9346E NMC9346EM8 NMC9346EN NMC9346M8 NMC9346N National-Semiconductor
National ->Texas Instruments
Description : 1024-BIT SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY View

1024-BIT SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY

Part Name(s) : HM-6518/883 HM-6518883 HM1-6518/883 Intersil
Intersil
Description : 1024 x 1 CMOS RAM View

Description
The HM-6518/883 is a 1024 x 1 STATIC CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Features
• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output

Part Name(s) : M2148H M2148H-3 Intel
Intel
Description : HIGH SPEED 1024 X 4 BIT STATIC RAM View
Part Name(s) : DS2431 DS2431P DS2431PTR DS2431TR DS2431X Dallas
Dallas Semiconductor -> Maxim Integrated
Description : 1024-BIT 1-Wire EEPROM View

GENERAL DESCRIPTION
The DS2431 is a 1024-BIT, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four memory pages can individually be write protected or put in EPROM-emulation mode, where bits can only be changed from a 1 to a 0 state. The DS2431 communicates over the single conductor 1-Wire bus. The communication follows the standard Dallas Semiconductor 1-Wire protocol. Each device has its own unalterable and unique 64-
bit ROM registration number that is factory lasered into the chip. The registration number is used to address the device in a multidrop 1-Wire net environment.

FEATURES
1024 Bits of EEPROM Memory Partitioned into Four Pages of 256 Bits
Individual Memory Pages can be Permanently Write Protected or Put in EPROM-Emulation Mode ("Write to 0")
Switchpoint Hysteresis and Filtering to Optimize Performance in the Presence of Noise
IEC 1000-4-2 Level 4 ESD Protection (8kV Contact, 15kV Air)
Reads and Writes Over a Wide Voltage Range of 2.8V to 5.25V from -40°C to +85°C
Communicates to Host with a Single Digital Signal at 15.4kbps or 111kbps Using 1-Wire Protocol

APPLICATIONS
Accessory/PC Board Identification
Medical Sensor Calibration Data Storage
Analog Sensor Calibration Including IEEE
P1451.4 Smart Sensors
Ink and Toner Print Cartridge Identification
After-Market Management of Consumables

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