datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : IRF510 Intersil
Intersil
Description : 5.6A, 100V, 0.540 Ohm, N-CHANNEL Power MOSFET View

5.6A, 100V, 0.540 Ohm, N-CHANNEL Power MOSFET
This N-CHANNEL enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 5.6A, 100V
•rDS(ON)= 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : BUZ72A Intersil
Intersil
Description : 9A, 100V, 0.250 Ohm, N-CHANNEL Power MOSFET View

9A, 100V, 0.250 Ohm, N-CHANNEL Power MOSFET

This is an N-CHANNEL enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features
• 9A, 100V
• rDS(ON) = 0.250Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
  -TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Part Name(s) : IRFP9150 Intersil
Intersil
Description : 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET View

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. The P-Channel IRFP9150 is an approximate electrical complement to the N-CHANNEL IRFP150.

Features
• 25A, 100V
•rDS(ON)= 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : JANSR2N7292 Intersil
Intersil
Description : 25A, 100V, 0.070 Ohm, Rad Hard, N-CHANNEL Power MOSFET View

Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-CHANNEL and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 25A, 100V, rDS(ON) = 0.070Ω
• Total Dose
    - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
    - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
    - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
    - 7.0nA Per-RAD(Si)/s Typically
• Neutron
    - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2


Part Name(s) : IRFD9110 Intersil
Intersil
Description : 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET View

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRF9510 Intersil
Intersil
Description : 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET View

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRF9150 Intersil
Intersil
Description : -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET View

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• -25A, -100V
• rDS(ON) = 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRFP9140 Intersil
Intersil
Description : 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET View

This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17521.

Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRF140 Intersil
Intersil
Description : 28A, 100V, 0.077 Ohm, N-CHANNEL Power MOSFET View

This N-CHANNEL enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]