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Part Name(s) : RFL1N10L Intersil
Intersil
Description : 1A, 100V, 1.200 Ohm, LOGIC Level, N-CHANNEL Power MOSFET

Description
This is an N-CHANNEL enhancement mode silicon gate power field effect transistor specifically designed for use with LOGIC level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from LOGIC circuit supply voltages.

Features
• 1A, 100V
• rDS(ON) = 1.200Ω

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Part Name(s) : FQP7N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing direct operation from LOGIC drives

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Part Name(s) : FQPF7N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 5.5A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing
   direct operation from LOGIC drives

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Part Name(s) : FQB7N10L FQI7N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control

Features
• 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing direct operationfrom LOGIC drives

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Part Name(s) : F12N10L RFP12N10L Intersil
Intersil
Description : 12A, 100V, 0.200 Ohm, LOGIC Level, N-CHANNEL Power MOSFET

These are N-CHANNEL enhancement mode silicon gate power field effect transistors specifically designed for use with LOGIC level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from LOGIC circuit supply voltages.

Features
• 12A, 100V
•rDS(ON)= 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

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Part Name(s) : FQPF13N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control

Features
• 8.7A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 8.7 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

View
Part Name(s) : FQP13N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 8.7 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

View
Part Name(s) : FQPF33N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 18A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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Part Name(s) : FQP19N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

View
Part Name(s) : FQPF19N10L Fairchild
Fairchild Semiconductor
Description : 100V LOGIC N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 13.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

View

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