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Part Name(s) : MRF177 Motorola
Motorola => Freescale
Description : 100 W, 28 V, 400 MHZ N?CHANNEL BROADBAND RF POWER MOSFET View

Designed for BROADBAND commercial and military applications up to 400 MHZ frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits.

• Typical PeRFormance at 400 MHZ, 28 V:
   Output POWER100 W
   Gain — 12 dB
   Efficiency — 60%
• Low Thermal Resistance
• Low Crss — 10 pF Typ @ VDS = 28 Volts
• Ruggedness Tested at Rated Output POWER
• Nitride Passivated Die for Enhanced Reliability
• Excellent Thermal Stability; Suited for Class A Operation
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Part Name(s) : MRF175LU MRF175LV Motorola
Motorola => Freescale
Description : 100 W, 28 V, 400 MHZ N?CHANNEL BROADBAND RF POWER FETs View

Designed for BROADBAND commercial and military applications using single ended circuits at frequencies to 400 MHZ. The high POWER, high gain and BROADBAND peRFormance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed PeRFormance
    MRF175LU @ 28 V, 400 MHZ (“U” Suffix)
       Output POWER100 Watts
       POWER Gain — 10 dB Typ
       Efficiency — 55% Typ
    MRF175LV @ 28 V, 225 MHZ (“V” Suffix)
       Output POWER100 Watts
       POWER Gain — 14 dB Typ
       Efficiency — 65% Typ
100% Ruggedness Tested At Rated Output POWER
• Low Thermal Resistance
• Low Crss — 20 pF Typ @ VDS = 28 V

Part Name(s) : MRF275 MRF275G Motorola
Motorola => Freescale
Description : 150 W, 28 V, 500 MHZ N.CHANNEL MOS BROADBAND 100 - 500 MHZ RF POWER FET View

The RF MOSFET Line
POWER Field-Effect Transistor N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHZ.
• Guaranteed PeRFormance @ 500 MHZ, 28 Vdc
  Output POWER — 150 Watts
  POWER Gain — 10 dB (Min)
  Efficiency — 50% (Min)
  100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
• Overall Lower Capacitance @ 28 V
  Ciss— 135 pF
  Coss— 140 pF
  Crss— 17 pF
• Simplified AVC, ALC and Modulation
Typical data for POWER amplifiers in industrial and commercial applications:
• Typical PeRFormance @ 400 MHZ, 28 Vdc
  Output POWER — 150 Watts
  POWER Gain — 12.5 dB
  Efficiency — 60%
• Typical PeRFormance @ 225 MHZ, 28 Vdc
  Output POWER — 200 Watts
  POWER Gain — 15 dB
  Efficiency — 65%

 

Part Name(s) : MRF9045M MRF9045MR1 Motorola
Motorola => Freescale
Description : 945 MHZ, 45 W, 28 V LATERAL N?CHANNEL BROADBAND RF POWER MOSFET View

The RF Sub–Micron MOSFET Line
RF POWER Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET

Designed for BROADBAND commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and BROADBAND peRFormance of this device make it ideal for large–signal, common–source amplifier applications in 28 volt base station equipment.

• Typical PeRFormance at 945 MHZ, 28 Volts
   Output POWER – 45 Watts PEP
   POWER Gain – 18.5 dB
   Efficiency – 41% (Two Tones)
   IMD – –31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHZ, 45 Watts (CW) Output POWER
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Moisture Sensitivity Level 3
RF POWER Plastic SuRFace Mount Package
• Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

 


Part Name(s) : MRF373R1 MRF373SR1 Motorola
Motorola => Freescale
Description : 470 ? 860 MHZ, 60 W, 28 V LATERAL N?CHANNEL BROADBAND RF POWER MOSFETS View

The RF MOSFET Line RF POWER Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for BROADBAND commercial and industrial applications with frequencies from 470 – 860 MHZ. The high gain and BROADBAND peRFormance of thes devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

• Guaranteed CW PeRFormance at 860 MHZ, 28 Volts, Narrowband Fixture
   Output POWER – 60 Watts
   POWER Gain – 13 dB
   Efficiency – 50%
• Typical PeRFormance at 860 MHZ, 28 Volts, BROADBAND Push–Pull Fixture
   Output POWER100 Watts (PEP)
   POWER Gain – 11.2 dB
   Efficiency – 40%
   IMD – –30 dBc
• Excellent Thermal Stability
100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHZ, 60 Watts CW
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.

 

Part Name(s) : MRF186 MRF186D Motorola
Motorola => Freescale
Description : 1.0GHz, 120W, 28V LATERAL N?CHANNEL BROADBAND RF POWER MOSFET View

The RF MOSFET Line RF POWER Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET

Designed for BROADBAND commercial and industrial applications with frequencies from 800 MHZ to 1.0 GHz. The high gain and BROADBAND peRFormance of this device make it ideal for large–signal, common source amplifier applications in 28 volt base station equipment.

• Guaranteed PeRFormance @ 960 MHZ, 28 Volts
   Output POWER — 120 Watts PEP
   POWER Gain — 11 dB
   Efficiency — 30%
   Intermodulation Distortion — –28 dBc
• Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase Angles with
    5:1 VSWR @ 28 Vdc, 960 MHZ, 120 Watts CW

Part Name(s) : MRF393 Motorola
Motorola => Freescale
Description : 100 W, 30 to 500 MHZ CONTROLLED ?Q? BROADBAND PUSH?PULL RF POWER TRANSISTOR NPN SILICON View

The RF Line NPN Silicon Push-Pull RF POWER Transistor

. . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHZ frequency range.

• Specified 28 Volt, 500 MHZ Characteristics —
   Output POWER = 100 W
   Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
   Efficiency = 55% (Typ)
• Built–In Input Impedance Matching Networks for BROADBAND Operation
• Push–Pull Configuration Reduces Even Numbered Harmonics
• Gold Metallization System for High Reliability
100% Tested for Load Mismatch
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

 

Part Name(s) : MRF21010LR1 MRF21010LSR1 Motorola
Motorola => Freescale
Description : 2170 MHZ, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs View

The RF MOSFET Line
RF POWER Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHZ. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical W-CDMA PeRFormance: -45 dBc ACPR, 2140 MHZ, 28 Volts,
   5 MHZ Offset/4.096 MHZ BW, 15 DTCH
   Output POWER — 2.1 Watts
   POWER Gain — 13.5 dB
   Efficiency — 21%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHZ, 10 Watts CW Output POWER
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

 

Part Name(s) : UMIL10P Microsemi
Microsemi Corporation
Description : 10 Watts, 28 Volts, Class AB UHF Communications 100 ? 400 MHZ View

GENERAL DESCRIPTION
The UMIL10P is a COMMON EMITTER BROADBAND transistor specifically intended for use in the 100-400 MHZ frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure ruggedness and high reliability.

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