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Part Name(s) : M36W216 M36W216BI M36W216BI70ZA1T M36W216BI85ZA1T M36W216BIZA M36W216T M36W216TI M36W216TI-ZAT M36W216TI70ZA1T M36W216TI85ZA1T M36W216TIZA ST-Microelectronics
STMicroelectronics
Description : 16 OR="FF003B">MBIT 1Mb X16 / BOOT BLOCK FLASH MemORy and 2 OR="FF003B">MBIT OR="FF003B">128KB X16 SRAM / Multiple MemORy Product

SUMMARY DESCRIPTION
The M36W216TI is a low voltage Multiple MemORy Product which combines two memORy devices; a
16 OR="FF003B">MBIT BOOT BLOCK FLASH memORy and a 2 OR="FF003B">MBIT SRAM. Recommended operating conditions do not allow both the FLASH memORy and the SRAM memORy to be active at the same time. The memORy is offered in a Stacked LFBGA66 (12OR="FF003B">X8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY
■MULTIPLE MEMORY PRODUCT
– 16 OR="FF003B">MBIT (1Mb x 16) BOOT BLOCK FLASH MemORy
– 2 OR="FF003B">MBIT (OR="FF003B">128KB x 16) SRAM
SUPPLY VOLTAGE
–VDDF= VDDS= 2.7V to 3.3V
–VDDQF= VDDS= 2.7V to 3.3V
–VPPF= 12V fOR Fast Program (optional)
■ACCESS TIME: 70ns, 85ns
■LOW POWER CONSUMPTION
■ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W216TI: 88CEh
– Bottom Device Code, M36W216BI: 88CFh

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Part Name(s) : AB28F400BX-T90 AB28F400BX-B90 Intel
Intel
Description : 4-OR="FF003B">MBIT (256K X16, 512K OR="FF003B">X8) BOOT BLOCK FLASH MEMORY FAMILY

Intel’s 4-OR="FF003B">MBIT FLASH MemORy Family is an extension of the BOOT BLOCK Architecture which includes BLOCK selective erasure, automated write and erase operations and standard microprocessOR interface. The 4-OR="FF003B">MBIT FLASH MemORy Family enhances the BOOT BLOCK Architecture by adding mORe density and BLOCKs, OR="FF003B">X8/X16 input/ output control, very high speed, low power, an industry standard ROM compatible pinout and surface mount packaging. The 4-OR="FF003B">MBIT FLASH family is an easy upgrade from Intel’s 2-OR="FF003B">MBIT BOOT BLOCK FLASH MemORy Family.

OR="FF003B">X8/X16 Input/Output Architecture
    — A28F400BX-T, A28F400BX-B
    — FOR High PerfORmance and High Integration 16-bit and 32-bit CPUs
■ Optimized High Density BLOCKed Architecture
    — One 16 KB Protected BOOT BLOCK
    — Two 8 KB Parameter BLOCKs
    — One 96 KB Main BLOCK
    — Three 128 KB Main BLOCKs
    — Top OR Bottom BOOT Locations
■ Extended Cycling Capability
    — 1,000 BLOCK Erase Cycles
■ Automated WORd/Byte Write and BLOCK Erase
    — Command User Interface
    — Status Register
    — Erase Suspend Capability
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
    — 1 mA Typical ICC Active Current in Static Operation
■ Very High-PerfORmance Read
    — 90 ns Maximum Access Time
    — 45 ns Maximum Output Enable Time
■ Low Power Consumption
    — 25 mA Typical Active Read Current
■ Deep Power-Down/Reset Input
    — Acts as Reset fOR BOOT Operations
■ Automotive Temperature Operation
    — b40§C to a125§C
■ Write Protection fOR BOOT BLOCK
■ Hardware Data Protection Feature
    — Erase/Write Lockout During Power Transitions
■ Industry Standard Surface Mount Packaging
    — JEDEC ROM Compatible 44-Lead PSOP
■ 12V WORd/Byte Write and BLOCK Erase
    — VPP e 12V g5% Standard
■ ETOXTM III FLASH Technology
    — 5V Read

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Part Name(s) : M36W108AB M36W108ABZM M36W108ABZN M36W108AT M36W108ATZM M36W108ATZN M36W108AT100ZM1T M36W108AT100ZM5T M36W108AT100ZM6T M36W108AT100ZN1T M36W108AT100ZN5T M36W108AT100ZN6T M36W108AT120ZM1T M36W108AT120ZM5T M36W108AT120ZM6T M36W108AT120ZN1T M36W108AT120ZN5T M36W108AT120ZN6T M36W108AB100ZM1T M36W108AB100ZM5T M36W108AB100ZM6T M36W108AB100ZN1T M36W108AB100ZN5T M36W108AB100ZN6T M36W108AB120ZM1T ST-Microelectronics
STMicroelectronics
Description : 8 OR="FF003B">MBIT (1Mb OR="FF003B">X8, BOOT BLOCK) FLASH MemORy and 1 OR="FF003B">MBIT (OR="FF003B">128KB OR="FF003B">X8) SRAM Low Voltage Multi-MemORy Product

DESCRIPTION
The M36W108A is multi-chip device containing an 8 OR="FF003B">MBIT BOOT BLOCK FLASH memORy and a 1 OR="FF003B">MBIT of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

SUPPLY VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: fOR Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (FLASH chip)
    – Stand-by: 100µA max. (FLASH chip)

FLASH MEMORY
■ 8 OR="FF003B">MBIT (1Mb x 8) BOOT BLOCK ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
■ SECURITY PROTECTION MEMORY AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
■ MEMORY BLOCKS
    – BOOT BLOCK (Top OR Bottom location)
    – Parameter and Main BLOCKs
BLOCK, MULTI-BLOCK and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another BLOCK during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108AT: D2h
    – Device Code, M36W108AB: DCh

SRAM
■ 1 OR="FF003B">MBIT (OR="FF003B">128KB x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

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Part Name(s) : M29F102BB M29F102BB35K1 M29F102BB35K1F M29F102BB35K1T M29F102BB35N1 M29F102BB35N1F M29F102BB35N1T M29F102BB45K1 M29F102BB45K1F M29F102BB45K1T M29F102BB45N1 M29F102BB45N1F M29F102BB45N1T M29F102BB50K1 M29F102BB50K1F M29F102BB50K1T M29F102BB50N1 M29F102BB50N1F M29F102BB50N1T M29F102BB55K1 M29F102BB55K1F M29F102BB55K1T M29F102BB55N1 M29F102BB55N1F M29F102BB55N1T ST-Microelectronics
STMicroelectronics
Description : 1 OR="FF003B">MBIT (64KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MemORy

The M29F102BB is a 1 OR="FF003B">MBIT (64KB X16) non-volatile memORy that can be read, erased and reprogrammed. These operations can be perfORmed using a SINGLE 5V SUPPLY. On power-up the memo ry defaults to its Read mode where it can be read in the same way as a ROM OR EPROM.

 

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Part Name(s) : M29W400B M29W400T ST-Microelectronics
STMicroelectronics
Description : NND - 4 OR="FF003B">MBIT (512KB OR="FF003B">X8 OR 256KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY

DESCRIPTION
The M29W400 is a non-volatile memORy that may be erased electrically at the BLOCK OR chip level and programmedin-systemon a Byte-by-ByteOR WORd by-WORdbasis using only a SINGLE 2.7V to 3.6V VCC SUPPLY. FOR Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix ORganisation allows each BLOCK to be erased and reprogrammed without affecting
other BLOCKs. BLOCKs can be protected against programing and erase on programming equipment,
 and tempORarily unprotected to make changes in the application. Each BLOCK can be programmed
and erased over 100,000 cycles. Instructions fOR Read/Reset, Auto Select fOR reading the Electronic Signature OR BLOCK Protection status, Programming, BLOCK and Chip Erase, Erase
Suspend and Resume are written to the device in cycles of commands to a CommandInterfaceusing standard microprocessOR write timings.The device is offered in TSOP48 (12 x 20mm),SO44 and FBGA48 (8 x 6 balls, 0.8mm pitch) packages. Both nORmal and reverse pinouts are available fOR the TSOP48 package.

• 2.7V to 3.6V SUPPLY VOLTAGE fOR PROGRAM, ERASE and READ OPERATION
• FAST ACCESS TIME: 90ns
• FAST PROGRAMMING TIME
–10µs by Byte / 16µs by WORd typical
• PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte OR WORd-by-WORd
– Status Register bits and Ready/Busy Outpu
• MEMORY BLOCKS
BOOT BLOCK (Top OR Bottom location)
– Parameter and Main BLOCKs
BLOCK, MULTI-BLOCK and CHIP ERASE
• MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
• ERASE SUSPEND and RESUME MODES
– Read and Program another BLOCK during Erase Suspend
• LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
• 100,000 PROGRAM/ERASE CYCLES per BLOCK
• 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
• ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh

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Part Name(s) : M29W102BB M29W102BB50N1 M29W102BB50N1T M29W102BB50N6 M29W102BB50N6T M29W102BB70N1 M29W102BB70N1T M29W102BB70N6 M29W102BB70N6T M29W102BB90N1 M29W102BB90N1T M29W102BB90N6 M29W102BB90N6T M29W102BT M29W102BT50N1 M29W102BT50N1T M29W102BT50N6 M29W102BT50N6T M29W102BT70N1 M29W102BT70N1T M29W102BT70N6 M29W102BT70N6T M29W102BT90N1 M29W102BT90N1T M29W102BT90N6 ST-Microelectronics
STMicroelectronics
Description : 1 OR="FF003B">MBIT (64KB X16, BOOT BLOCK) Low Voltage SINGLE SUPPLY FLASH MemORy

SUMMARY DESCRIPTION
The M29W102B is a 1 OR="FF003B">MBIT (64KB X16) non-volatile memORy that can be read, erased and reprogrammed. These operations can be perfORmed using a SINGLE low voltage (2.7 to 3.6V) SUPPLY. On power-up the memORy defaults to its Read mode where it can be read in the same way as a ROM OR EPROM.

SINGLE 2.7 to 3.6V SUPPLY VOLTAGE fOR PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 50ns
■ PROGRAMMING TIME
    – 10µs per WORd typical
■ 5 MEMORY BLOCKS
    – 1 BOOT BLOCK (Top OR Bottom Location)
    – 2 Parameter and 2 Main BLOCKs
■ PROGRAM/ERASE CONTROLLER
    – Embedded WORd Program algORithm
    – Embedded Multi-BLOCK/Chip Erase algORithm
    – Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another BLOCK during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ M28F102 COMPATIBLE
    – Pin-out and Read Mode
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29W102BT: 0099h
    – Bottom Device Code M29W102BB: 0098h

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Part Name(s) : M29F160BB M29F160BB90N6 M29F160BT M29F160BT90N6 M29F160BT55N1 M29F160BT55N1T M29F160BT55N3 M29F160BT55N3T M29F160BT55N6 M29F160BT55N6T M29F160BT70N1 M29F160BT70N1T M29F160BT70N3 M29F160BT70N3T M29F160BT70N6 M29F160BT70N6T M29F160BB55N1 M29F160BB55N1T M29F160BB55N3 M29F160BB55N3T M29F160BB55N6 M29F160BB55N6T M29F160BB70N1 M29F160BB70N1T M29F160BB70N3 ST-Microelectronics
STMicroelectronics
Description : 16 OR="FF003B">MBIT (2Mb OR="FF003B">X8 OR 1Mb X16, BOOT BLOCK) SINGLE SUPPLY FLASH MemORy

SUMMARY DESCRIPTION
The M29F160B is a 16OR="FF003B">MBIT (2Mb OR="FF003B">X8 OR 1Mb X16) non-volatile memORy that can be read, erased and reprogrammed. These operations can be perfORmed using a SINGLE 5V SUPPLY. On power-up the memORy defaults to its Read mode where it can be read in the same way as a ROM OR EPROM.

SINGLE 5V±10% SUPPLY VOLTAGE fOR PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
    – 8µs per Byte/WORd typical
■ 35 MEMORY BLOCKS
    – 1 BOOT BLOCK (Top OR Bottom Location)
    – 2 Parameter and 32 Main BLOCKs
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte/WORd Program algORithm
    – Embedded Multi-BLOCK/Chip Erase algORithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another BLOCK during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29F160BT: 22CCh
    – Bottom Device Code M29F160BB: 224Bh

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Part Name(s) : M29W160EB M29W160EB79N6 M29W160EB79N6E M29W160EB79N6F M29W160EB79N6T M29W160EB79ZA6 M29W160EB79ZA6E M29W160EB79ZA6F M29W160EB79ZA6T M29W160EB90N6 M29W160EB90N6E M29W160EB90N6F M29W160EB90N6T M29W160EB90ZA6 M29W160EB90ZA6E M29W160EB90ZA6F M29W160EB90ZA6T M29W160ET M29W160ET79N6 M29W160ET79N6E M29W160ET79N6F M29W160ET79N6T M29W160ET79ZA6 M29W160ET79ZA6E M29W160ET79ZA6F ST-Microelectronics
STMicroelectronics
Description : 16 OR="FF003B">MBIT (2Mb OR="FF003B">X8 OR 1Mb X16, BOOT BLOCK) 3V SUPPLY FLASH MemORy

SUMMARY DESCRIPTION
The M29W160E is a 16 OR="FF003B">MBIT (2Mb OR="FF003B">X8 OR 1Mb X16) non-volatile memORy that can be read, erased and reprogrammed. These operations can be perfORmed using a SINGLE low voltage (2.7 to 3.6V) SUPPLY. On power-up the memORy defaults to its Read mode where it can be read in the same way as a ROM OR EPROM.

FEATURES SUMMARY
SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V fOR Program, Erase and Read
■ ACCESS TIMES: 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/WORd typical
■ 35 MEMORY BLOCKS
– 1 BOOT BLOCK (Top OR Bottom Location)
– 2 Parameter and 32 Main BLOCKs
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/WORd Program algORithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another BLOCK during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W160ET: 22C4h
– Bottom Device Code M29W160EB: 2249h

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Part Name(s) : M36W832BE M36W832BE-ZAT M36W832BE70ZA1S M36W832BE70ZA1T M36W832BE70ZA6S M36W832BE70ZA6T M36W832BE85ZA1S M36W832BE85ZA1T M36W832BE85ZA6S M36W832BE85ZA6T M36W832TE M36W832TE-ZAT M36W832TE70ZA1S M36W832TE70ZA1T M36W832TE70ZA6S M36W832TE70ZA6T M36W832TE85ZA1S M36W832TE85ZA1T M36W832TE85ZA6S M36W832TE85ZA6T ST-Microelectronics
STMicroelectronics
Description : 32 OR="FF003B">MBIT (2Mb X16, BOOT BLOCK) FLASH MemORy and 8 OR="FF003B">MBIT (512Kb X16) SRAM, Multiple MemORy Product

SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple MemORy Product which combines two memORy devices; a 32 OR="FF003B">MBIT BOOT BLOCK FLASH memORy and an 8 OR="FF003B">MBIT SRAM. Recommended operating conditions do not allow both the FLASH and the SRAM to be active at the same time.

FEATURES SUMMARY
SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V fOR Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W832TE: 88BAh
    – Bottom Device Code, M36W832BE: 88BBh

FLASH MEMORY
■ 32 OR="FF003B">MBIT (2Mb X16) BOOT BLOCK
    – 8 x 4 KWORd Parameter BLOCKs (Top OR Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double WORd Programming Option
    – Quadruple WORd Programming Option
BLOCK LOCKING
    – All BLOCKs locked at Power up
    – Any combination of BLOCKs can be locked
    – WPF fOR BLOCK Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 8 OR="FF003B">MBIT (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

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Part Name(s) : M29F100BB M29F100BB-120M1 M29F100BB-120M3 M29F100BB-120M6 M29F100BB-120N1 M29F100BB-120N3 M29F100BB-120N6 M29F100BB-45M1 M29F100BB-45M3 M29F100BB-45M6 M29F100BB-45N1 M29F100BB-45N3 M29F100BB-45N6 M29F100BB-70M1 M29F100BB-70M3 M29F100BB-70M6 M29F100BB-70N1 M29F100BB-70N3 M29F100BB-70N6 M29F100BB-90M1 M29F100BB-90M3 M29F100BB-90M6 M29F100BB-90N1 M29F100BB-90N3 M29F100BB-90N6 ST-Microelectronics
STMicroelectronics
Description : 1 OR="FF003B">MBIT (OR="FF003B">128KB OR="FF003B">X8 OR 64KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MemORy

SUMMARY DESCRIPTION
The M29F100B is a 1 OR="FF003B">MBIT (OR="FF003B">128KB OR="FF003B">X8 OR 64KB X16) non-volatile memORy that can be read, erased and reprogrammed. These operations can be perfORmed using a SINGLE 5V SUPPLY. On power-up the memORy defaults to its Read mode where it can be read in the same way as a ROM OR EPROM. The M29F100B is fully backward compatible with the M29F100.

SINGLE 5V±10% SUPPLY VOLTAGE fOR PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45ns
■ PROGRAMMING TIME
    – 8µs per Byte/WORd typical
■ 5 MEMORY BLOCKS
    – 1 BOOT BLOCK (Top OR Bottom Location)
    – 2 Parameter and 2 Main BLOCKs
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte/WORd Program algORithm
    – Embedded Multi-BLOCK/Chip Erase algORithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another BLOCK during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29F100BT: 00D0h
    – Bottom Device Code M29F100BB: 00D1h

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