3 Description
The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
  – Device Automotive Qualified Grade 1: –40°C to 125°C Ambient Operating Temperature Range
  – Device HBM ESD Classification Level 2
  – Device CDM ESD Classification Level C6
• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
• 4-A Peak-Source and Sink Symmetrical Drive
• Ability to Handle Negative Voltages (–5 V) at Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise and Fall Times (9-ns and 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up and power down)
• TTL and CMOS Compatible Input-Logic Threshold (independent of supply voltage)
• Hysteretic-Logic Thresholds for High-Noise Immunity
• Dual Input Design (choice of an inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)
  – Unused Input Pin can be Used for Enable or Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
• Operating Temperature Range of –40°C to 140°C
• 5-Pin DBV (SOT-23) Package Option

Applications
• Automotive
• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)