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STN1NB80 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  no available.
STN1NB80 Datasheet PDF : STN1NB80 pdf   
STN1NB80 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 16 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT

 

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