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STD4NB40 Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
STD4NB40 N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  1998  
STD4NB40 Datasheet PDF : STD4NB40 pdf   
STD4NB40 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.47 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
   INDUSTRIAL, AND LIGHTING EQUIPMENT

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