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ST13003D-K Datasheet PDF - STMicroelectronics

Part Name
Description
MFG CO.
Other PDF
  2009  
PDF
ST13003D-K Datasheet PDF : ST13003D-K pdf     
ST13003D-K image

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.

Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode

Applications
■ Electronic ballast for fluorescent lighting
 

Page Link's: 1  2  3  4  5  6  7  8 
 

Part Name
Description
PDF
MFG CO.
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High voltage fast-switching NPN power transistor ( Rev : 2021 )
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High voltage fast-switching NPN power transistor
STMicroelectronics

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