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SI4420DY Datasheet PDF - International Rectifier

Part NameDescriptionManufacturer
International Rectifier IR
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SI4420DY Datasheet PDF : SI4420DY pdf   
SI4420DY image

This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications.
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.

● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive

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