datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :

RJH60F5BDPQ-A0 Datasheet PDF - Renesas

Home  >>>  Renesas  >>> RJH60F5BDPQ-A0 PDF

Part NumberRJH60F5BDPQ-A0 Renesas
Renesas Electronics 
Description600V - 40A - IGBT High Speed Power Switching
RJH60F5BDPQ-A0 Datasheet PDF : RJH60F5BDPQ-A0 pdf   
RJH60F5BDPQ-A0 image
Image Info : [Renesas] RJH60F5BDPQ-A0

Features
● Low collector to emitter saturation voltage
           VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
● Built in fast recovery diode in one package
● Trench gate and thin wafer technology
● High speed switching
        tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)

Share Link : Renesas

Searches related to RJH60F5BDPQ-A0 description


Language : Korean   Chinese   Japanese   Russian   Spanish

@ 2014 - 2017  [ Home  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]