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PTFA192401E Datasheet PDF - Infineon Technologies

Part NameDescriptionManufacturer
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Infineon
Infineon Technologies Infineon
Other PDF  no available.
PTFA192401E Datasheet PDF : PTFA192401E pdf   
PTFA192401E image

Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,and thermally-enhanced packages with slotted or earless flanges.  Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Features
• Pb-free, RoHS-compliant and thermally-enhanced packages
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16 dB
- Efficiency = 27.5%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –41 dBc
• Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 16 dB
- Efficiency = 33%
- Adjacent channel power = –33 dBc
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power

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