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PTF081301E Datasheet PDF - Infineon Technologies

Part NameDescriptionManufacturer
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Infineon
Infineon Technologies Infineon
Other PDF  no available.
PTF081301E Datasheet PDF : PTF081301E pdf   
PTF081301E image

Description
The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance
- Average output power = 65 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power

 

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