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NE4210S01-T1B Datasheet PDF - NEC => Renesas Technology

Part NameDescriptionManufacturer
NE4210S01-T1B X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
NEC => Renesas Technology NEC
Other PDF  no available.
NE4210S01-T1B Datasheet PDF : NE4210S01-T1B pdf   
NE4210S01 image

DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm

 

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