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NE4210S01-T1B Datasheet PDF - California Eastern Laboratories.

Part Name
Description
MFG CO.
NE4210S01-T1B
CEL
California Eastern Laboratories. CEL
Other PDF
  no available.
PDF
NE4210S01-T1B Datasheet PDF : NE4210S01-T1B pdf     
NE4210S01 image

DESCRIPTION
NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE4210S01 is housed in a low cost plastic package which is available in tape and reel.

FEATURES
• SUPER LOW NOISE FIGURE: 0.50 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN: 13.0 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 µm
• GATE WIDTH: WG = 160 µm

 

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