NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE4210S01 is housed in a low cost plastic package which is available in tape and reel.
• SUPER LOW NOISE FIGURE: 0.50 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN: 13.0 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 µm
• GATE WIDTH: WG = 160 µm