datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Macronix  >>> MX25L6445E PDF

MX25L6445E Datasheet PDF - Macronix International

Part NameDescriptionManufacturer
MX25L6445E 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO™ (SERIAL MULTI I/O) FLASH MEMORY Macronix
Macronix International Macronix
Other PDF  no available.
MX25L6445E Datasheet PDF : MX25L6445E pdf   
MX25L6445E image

GENERAL DESCRIPTION
MX25L6445E is 67,108,864 bits serial Flash memory, which is confgured as 8,388,608 x 8 internally. When it is in two or four I/O mode, the structure becomes 33,554,432 bits x 2 or 16,777,216 bits x 4. The MX25L6445E features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.
MX25L6445E provides high performance read mode, which may latch address and data on both rising and falling edge of clock. By using this high performance read mode, the data throughput may be doubling. Moreover, the performance may reach direct code execution, the RAM size of the system may be reduced and further saving system cost.

FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/O mode) structure
• 2048 Equal Sectors with 4K bytes each
   - Any Sector can be erased individually
• 256 Equal Blocks with 32K bytes each
   - Any Block can be erased individually
• 128 Equal Blocks with 64K bytes each
   - Any Block can be erased individually
• Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE
• High Performance
   VCC = 2.7~3.6V
   - Normal read
   - 50MHz
   - Fast read (Normal Serial Mode)
      - 1 I/O: 104MHz with 8 dummy cycles
      - 2 I/O: 70MHz with 4 dummy cycles
      - 4 I/O: 70MHz with 6 dummy cycles
   - Fast read (Double Transfer Rate Mode)
      - 1 I/O: 50MHz with 6 dummy cycles
      - 2 I/O: 50MHz with 6 dummy cycles
      - 4 I/O: 50MHz with 8 dummy cycles
   - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
   - Byte program time: 9us (typical)
   - Continuously Program mode (automatically increase address under word program mode)
   - Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip
• Low Power Consumption
   - Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz
   - Low active programming current: 25mA (max.)
   - Low active erase current: 25mA (max.)
   - Low standby current: 50uA (max.)
   - Deep power down current: 20uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retention

SOFTWARE FEATURES
• Input Data Format
   - 1-byte Command code

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51 

 

Other manufacturer searches related to MX25L6445E

Part NameDescriptionPDFManufacturer
MX25L12855E 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO™ (SERIAL MULTI I/O) FLASH MEMORY MX25L12855E View Macronix International
MX25L12845E 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY MX25L12845E View Macronix International
MBM29LV652UE90 Flash memory CMOS 64M (4M x 16) bit MBM29LV652UE90 View Fujitsu
W25Q64CV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI W25Q64CV View Winbond
NX25F641C-3T 64M-BIT SERIAL FLASH MEMORY WITH 4-PIN SPI INTERFACE NX25F641C-3T View NexFlash -> Winbond Electronics
25Q64DWFIG 1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI 25Q64DWFIG View Winbond
NX25F640C 64M-BIT SERIAL FLASH MEMORY WITH 4-PIN SPI INTERFACE NX25F640C View NexFlash -> Winbond Electronics
NX26F640C-3T 64M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS2 INTERFACE NX26F640C-3T View NexFlash -> Winbond Electronics
M6MGB162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) M6MGB162S4BVP View MITSUBISHI ELECTRIC
S25FL128K 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus S25FL128K View Spansion Inc.

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2020  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]