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MW7IC18100GNR1 Datasheet PDF - Freescale Semiconductor

Part NameDescriptionManufacturer
MW7IC18100GNR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Freescale
Freescale Semiconductor Freescale
Other PDF  no available.
MW7IC18100GNR1 Datasheet PDF : MW7IC18100GNR1 pdf   
MW7IC18100NBR1 image

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

Final Application
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,Pout = 100 Watts CW, 1805-1880 MHz or 1930-1990 MHz
  Power Gain  30 dB
  Power Added Efficiency  48%

GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 =800 mA, Pout = 40 Watts Avg., 1805-1880 MHz or 1930-1990 MHz
   Power Gain  31 dB
   Power Added Efficiency   35%
   Spectral Regrowth @ 400 kHz Offset = -63 dBc
   Spectral Regrowth @ 600 kHz Offset = -80 dBc
   EVM  1.5% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power
• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW Pout.

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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