datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  OKI  >>> MSM534022E PDF

MSM534022E Datasheet PDF - Oki Electric Industry

Part NameDescriptionManufacturer
MSM534022E 262,144-Word x 16-Bit or 524,288-Word x 8-Bit MASKROM OKI
Oki Electric Industry OKI
Other PDF  no available.
MSM534022E Datasheet PDF : MSM534022E pdf   
MSM534022E image

DESCRIPTION
The OKI MSM534022E is a high-speed CMOS Mask ROM that can electrically switch between 262,144-word x 16-bit and 524,288-word x -bit configurations. The MSM534022E operates on a single 5.0V power supply and is TTL compatible. The chip's asynchronous I/O requires no external clock assuring easy operation. A power-down mode provides low power dissipation when the chip is not selected. The CE and OE pins are provided as control signals that permit three-stated output allowing easy memory expansion on a system bus. The MSM534022E is suited for use as large capacity fixed memory for microcomputers and data terminals.


FEATURES
Single 5.0V power supply
262,144-words x 16-bit/524,288-words x 8-bit
Access time
 80ns MAX
Input/Output TTL compatible
Tri-State output configurations
Internal powerdown function
Packages:
  40-PIN PLASTIC DIP (DIP40-P-600-2.54)
  40-PIN PLASTIC SOP (SOP40-P-525-1.27-K)
  44-PIN PLASTIC TSOP (TSOPII44-P-400-0.80-K)
4MEPROM (40-PIN) pin compatible

Page Links : 1  2  3  4  5  6  7  8 

 

Other manufacturer searches related to MSM534022E

Part NameDescriptionPDFManufacturer
M6MGB162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) M6MGB162S4BVP View MITSUBISHI ELECTRIC
TC514800AFT 524,288 WORD X 8 BIT DYNAMIC RAM TC514800AFT View Toshiba
M6MGB160S2BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY M6MGB160S2BVP View MITSUBISHI ELECTRIC
HN27C4096HCC 262,144-word x 16-bit CMOS UV Erasable and Programmable ROM HN27C4096HCC View Hitachi -> Renesas Electronics
M6MGB160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY M6MGB160S4BVP View MITSUBISHI ELECTRIC
MEJ02C2016_M5M5J167KT 16777216-BIT (1048576-WORD BY 16-BIT / 2097152-WORD BY 8-BIT) CMOS STATIC RAM MEJ02C2016_M5M5J167KT View Hitachi -> Renesas Electronics
HN27C4000G 524288-Word ×8-Bit/262144-Word ×16-Bit CMOS UV Erasable and Programmable ROM HN27C4000G View Hitachi -> Renesas Electronics
TC514800AFTLL 524,288 WORD X 8 BIT DYNAMIC RAM TC514800AFTLL View Toshiba
HN58X2402SFPIE Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) HN58X2402SFPIE View Renesas Electronics
IS28F400BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY IS28F400BLV View Integrated Silicon Solution

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2020  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]