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MRF6S19060N Datasheet PDF - Freescale Semiconductor

Part NameDescriptionManufacturer
MRF6S19060N 1930-1990 MHz, 12 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Freescale
Freescale Semiconductor Freescale
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MRF6S19060N Datasheet PDF : MRF6S19060N pdf   
MRF6S19060N image

RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,
   IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS-95 CDMA
   (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
   1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
     Power Gain — 16 dB
     Drain Efficiency — 26%
     IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth
     ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

 

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