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MRF18060B Datasheet PDF - Freescale Semiconductor

Part NameDescriptionManufacturer
MRF18060B RF Power Field Effect Transistor Freescale
Freescale Semiconductor Freescale
Other PDF  no available.
MRF18060B Datasheet PDF : MRF18060B pdf   
MRF18060BLSR3 image

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.

• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
    Power Gain — 13 dB (Typ) @ 60 Watts CW
    Efficiency — 45% (Typ) @ 60 Watts CW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power

Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

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