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MGP7N60E Datasheet PDF - ON Semiconductor

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MGP7N60E Datasheet PDF : MGP7N60E pdf     
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This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.

• Industry Standard TO–220 Package
• High Speed: Eoff = 70 μJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V
• Low On–Voltage 2.0 V typical at 5.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes


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