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LH532100BD-1 Datasheet PDF - Sharp Electronics

Part Name
Description
MFG CO.
LH532100BD-1
Sharp
Sharp Electronics Sharp
Other PDF
  no available.
PDF
LH532100BD-1 Datasheet PDF : LH532100BD-1 pdf     
LH532100BN-1 image

DESCRIPTION
The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate process technology.

FEATURES
• 262,144 words × 8 bit organization
• Access time: 120 ns (MAX.)
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Power consumption:
    Operating: 275 mW (MAX.)
    Standby: 550 µW (MAX.)
• Mask-programmable control pin:
    Pin 1 = OE1/OE1/DC
    Pin 24 = OE/OE
• Packages:
    32-pin, 600-mil DIP
    32-pin, 525-mil SOP
    32-pin, 450-mil QFJ (PLCC)
    32-pin, 8 × 20 mm2 TSOP (Type I)
    32-pin, 400-mil TSOP (Type II)

 

Part Name
Description
PDF
MFG CO.
2M-BIT [256K x 8] CMOS FLASH MEMORY
Macronix International
2M-BIT [256K x 8/128K x 16] CMOS MASK ROM
Macronix International
2M-BIT [256K x 8] CMOS FLASH MEMORY
Macronix International
2M-BIT [256K x 8] CMOS FLASH MEMORY
Macronix International
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Macronix International
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Macronix International
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
Toshiba
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
Toshiba
256K x 8 CMOS FLASH MEMORY
Winbond
OTP CMOS 256K×8-Bit EPROM
Holtek Semiconductor

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