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LET20030S Datasheet PDF - STMicroelectronics

Part NameDescriptionManufacturer
LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  no available.
LET20030S Datasheet PDF : LET20030S pdf   
LET20030S image

DESCRIPTION
The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20030S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20030S’s superior linearity performance makes it an ideal solution for base station applications.

Designed for GSM / EDGE / IS-97 applications

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
    POUT = 4.5 W
    EFF = 17 %

 

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