datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  SANYO  >>> LC36256AL-70 PDF

LC36256AL-70 Datasheet PDF - SANYO -> Panasonic

Part NameDescriptionManufacturer
LC36256AL-70 256 K (32768 words × 8 bits) SRAM SANYO
SANYO -> Panasonic SANYO
Other PDF  no available.
LC36256AL-70 Datasheet PDF : LC36256AL-70 pdf   
LC36256AML-70 image

Overview
The LC36256AL, AML are fully asynchronous silicon gate CMOS static RAMs with an 32768 words × 8 bits configuration.
This series have CE chip enable pin for device select/nonselect control and an OE output enable pin for output control, and features high speed as well as low power dissipation.
For these reasons, the series is especially suited for use in systems requiring high speed, low power, and battery backup, and it is easy to expand memory capacity.

Features
• Access time
    70 ns (max.) : LC36256AL-70, LC36256AML-70
    85 ns (max.) : LC36256AL-85, LC36256AML-85
    100 ns (max.) : LC36256AL-10, LC36256AML-10
    120 ns (max.) : LC36256AL-12, LC36256AML-12
• Low current dissipation
    During standby
        2 µA (max.) / Ta = 25°C
        5 µA (max.) / Ta = 0 to +40°C
        25 µA (max.) / Ta = 0 to +70°C
    During data retention
        1 µA (max.) / Ta = 25°C
        2 µA (max.) / Ta = 0 to +40°C
        10 µA (max.) / Ta = 0 to +70°C
    During operation (DC)
        10 mA (max.)
• Single 5 V power supply: 5 V ±10%
• Data retention power supply voltage: 2.0 to 5.5 V
• No clock required (Fully static memory)
• All input/output levels are TTL compatible
• Common input/output pins, with three output states
• Packages
    DIP 28 -pin (600 mil) plastic package : LC36256AL
    SOP 28-pin (450 mil) plastic package : LC36256AML

 

Other manufacturer searches related to LC36256AL-70

Part NameDescriptionPDFManufacturer
EDS1232AASE 128M bits SDRAM(4M words ×32 bits) EDS1232AASE View Elpida Memory, Inc
W631GG6KB 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. W631GG6KB View Winbond
IS42S16100-8T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM IS42S16100-8T View Integrated Silicon Solution
MS81V04160A Dual FIFO (262,214 Words × 8 Bits) × 2 MS81V04160A View Oki Electric Industry
TC58256AFT 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM TC58256AFT View Toshiba
TC58256AFTI 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM TC58256AFTI View Toshiba
IS42S16128 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM IS42S16128 View Integrated Silicon Solution
MS81V04166 Dual FIFO (262,214 Words ×8 Bits) × 2 MS81V04166 View Oki Electric Industry
MSM54V12222A 262,214 Words x 12 Bits FIELD MEMORY MSM54V12222A View Oki Electric Industry
IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM IS42S16100 View Integrated Silicon Solution

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]