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K4D26323RA-GC Datasheet PDF - Samsung

Part NameDescriptionManufacturer
K4D26323RA-GC 1M x 32Bit x 4 Banks with Bi-directional Data Strobe and DLL Double Data Rate Synchronous RAM (144-Ball FBGA) Samsung
Samsung Samsung
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K4D26323RA-GC Datasheet PDF : K4D26323RA-GC pdf   
K4D26323RA-GC36 image

FOR 1M x 32Bit x 4 Bank DDR SDRAM
The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

• 2.8V + 5% power supply for device operation
• 2.8V + 5% power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
   -. Read latency 3,4 (clock)
   -. Burst length (2, 4, 8 and Full page)
   -. Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the positive going edge of the system clock
• Differential clock input
• No Wrtie-Interrupted by Read Function
• 4 DQS’s ( 1DQS / Byte )
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 32ms refresh period (4K cycle)
• 144-Ball FBGA
• Maximum clock frequency up to 350MHz
• Maximum data rate up to 700Mbps/pin


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