The 2SK2413 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
• Low On-Resistance
RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 5.0 A)
RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 5.0 A)
• Low CissCiss= 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
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