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IS62LV12816L Datasheet PDF - Integrated Circuit Solution Inc

Part Name
Description
MFG CO.
IS62LV12816L
ICSI
Integrated Circuit Solution Inc ICSI
Other PDF
  no available.
PDF
IS62LV12816L Datasheet PDF : IS62LV12816L pdf     
IS62LV12816LL image

DESCRIPTION
The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
• High-speed access time: 55, 70, 100 ns
• CMOS low power operation
    – 120 mW (typical) operating
    – 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.5V-3.6V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA

 

Part Name
Description
PDF
MFG CO.
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
Semiconductor Corporation
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
128K X 16 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
128K X 16 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung

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