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IS41LV16400 Datasheet PDF - Integrated Silicon Solution

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IS41LV16400 Datasheet PDF : IS41LV16400 pdf   
IS41LV16400 image

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16400 ideal for use in 16-bit wide data bus systems.

• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 4,096 cycles / 64 ms
• Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• Low Standby power dissipation:
    – 1.8mW(max) CMOS Input Level
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30oC to 85oC
• Industrail Temperature Range -40oC to 85oC


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