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IS41C16257C Datasheet PDF - Integrated Silicon Solution

Part Name
Description
MFG CO.
IS41C16257C
ISSI
Integrated Silicon Solution ISSI
Other PDF
  no available.
PDF
IS41C16257C Datasheet PDF : IS41C16257C pdf     
IS41C16257C image

DESCRIPTION
The ISSI IS41C16257C/IS41LV16257C is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems.

FEATURES
•  Fast access and cycle time
•  TTL compatible inputs and outputs
•  Refresh Interval: 512 cycles/8 ms
•  Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
•  JEDEC standard pinout
•  Single power supply:
    5V ± 10% (IS41C16257C)
    3.3V ± 10% (IS41LV16257C)
•  Byte Write and Byte Read operation via two CAS
•  Lead-free available
•  Industrial temperature available

 

Part Name
Description
PDF
MFG CO.
1 MEG x 4 DRAM FAST PAGE MODE, WRITE-PER-BIT
Micron Technology
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
Micron Technology
256 x 4 DRAM FAST PAGE MODE
Austin Semiconductor
16MEG : x4 Fast Page Mode DRAM
Unspecified
16MEG : x4 Fast Page Mode DRAM
Unspecified
16MEG : x4 Fast Page Mode DRAM
Nanya Technology
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
NanoAmp Solutions, Inc.
2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
Oki Electric Industry
4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
Oki Electric Industry
4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
Austin Semiconductor

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