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IS24C52-2G Datasheet PDF - Integrated Silicon Solution

Part NameDescriptionManufacturer
IS24C52-2G 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection ISSI
Integrated Silicon Solution ISSI
Other PDF  no available.
IS24C52-2G Datasheet PDF : IS24C52-2G pdf   
IS24C52-3ZI image

DESCRIPTION
The IS24C52 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C52 contains a memory array of 2,048-bits (256K x 8), and is further subdivided into 16 pages of 16 bytes each for page-write mode. The software write-protection feature is initiated with a unique irreversible instruction. After this command is transmitted, the first 128 bytes of the array become permanently read-only. This feature is popular in applications like DRAM DIMMs to retain DRAM related data. This EEPROM is offered in wide operating voltages of 1.8V to 5.5V (IS24C52-2) and 2.5V to 5.5V (IS24C52-3) to be compatible with most application voltages. ISSI designed the IS24C52 as a low-cost and low-power 2-wire EEPROM solution. The devices are packaged in 8-pin SOIC, and 8-pin TSSOP, and 8-pin MSOP.

FEATURES
• Two-Wire Serial Interface
    – Bidirectional data transfer protocol
    – 400 kHz (I2C TM Protocol) Compatibility
• Organization:
    – 256-bit x 8-bit
• Data Protection Features
    – Write Protect Pin
    – Permanent Software Protection
• 16-Byte Page Write Buffer
    – Partial Page-writes permitted
• Low Power CMOS Technology
    – Active Current less than 2 mA (5V)
    – Standby Current less than 6 µA (5V)
    – Standby Current less than 2 µA (2.5V)
• Low Voltage Operation
    – IS24C52-2: Vcc = 1.8V to 5.5V
    – IS24C52-3: Vcc = 2.5V to 5.5V
• Random or Sequential Read Modes
• Filtered Inputs for Noise Suppression
• Self timed Write cycle with auto clear
    – 5 ms @ 2.5V
• High Reliability
    – Endurance: 1,000,000 Cycles
    – Data Retention: 40 Years
• Commercial and Industrial temperature ranges
• 8-pin SOIC, 8-pin TSSOP, and 8-pin MSOP

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